sbl10l25, sblf10l25, sblb10l25 vishay general semiconductor document number: 88723 revision: 08-nov-07 www.vishay.com 1 low v f schottky barrier rectifier features ? guardring for overvoltage protection ? lower power losses, high efficiency ? very low forward voltage drop ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-std-020c, lf maximum peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 s (for to-220ac and ito-220ac package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage, high frequency rectifier of switching mode power supplie s, freewheeling diodes, dc-to-dc converters and polarity protection application. mechanical data case: to-220ac, ito-220ac, to-263ab epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 10 a v rrm 25 v i fsm 240 a v f 0.35 v t j max. 150 c case pin 2 pin 1 to-220ac sbl10l25 ito-220ac sblf10l25 sblb10l25 pin 1 pin 2 k heatsink 1 2 1 2 k pin 2 pin 1 to-263ab 1 2 maximum ratings (t c = 25 c unless otherwise noted) parameter symbol sbl10l25 unit maximum repetitive peak reverse voltage v rrm 25 v working peak reverse voltage v rwm 18 v maximum dc blocking voltage v dc 25 v maximum average forward rectified current at t c = 135 c i f(av) 10 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 240 a peak repetitive reverse current at t p = 2 s, 1 khz i rrm 1.0 a voltage rate of change (rated v r ) dv/dt 10000 v/s operating junction and storage temperature range t j , t stg - 65 to + 150 c isolation voltage (ito-220ac only) from terminal to heatsink t = 1 min v ac 1500 v
sbl10l25, sblf10l25, sblb10l25 vishay general semiconductor www.vishay.com document number: 88723 revision: 08-nov-07 2 note: (1) pulse test: 300 s pulse width, 2 % duty cycle note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage (1) i f = 10 a i f = 10 a i f = 20 a i f = 20 a t j = 25 c t j = 125 c t j = 25 c t j = 125 c v f 0.46 0.35 0.55 0.48 v maximum instantaneous reverse current at dc blocking voltage (1) t j = 25 c t j = 125 c i r 0.80 260 ma thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol sbl sblf sblb unit typical thermal resistance fr om junction to case per leg r jc 1.5 4.0 1.5 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ac sbl10l25-e3/45 1.80 45 50/tube tube ito-220ac sblf10l25-e3/45 1.94 45 50/tube tube to-263ab sblb10l25-e3/45 1.33 45 50/tube tube to-263ab sblb10l25-e3/81 1.33 81 800/reel tape reel to-220ac sbl10l25he3/45 (1) 1.80 45 50/tube tube ito-220ac sblf10l25he3/45 (1) 1.94 45 50/tube tube to-263ab sblb10l25he3/45 (1) 1.33 45 50/tube tube to-263ab sblb10l25he3/81 (1) 1.33 81 800/reel tape reel figure 1. forward current derating curve 0 5 7.5 2.5 10 12.5 50 100 150 a v erage for w ard c u rrent (a) case temperat u re (c) figure 2. typical instantaneous forward characteristics 100 10 1 0.1 0.01 0 0.1 0.3 0.6 0.7 0.2 0.4 0.5 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 100 c t j = 150 c t j = 125 c t j = 175 c t j = 25 c
sbl10l25, sblf10l25, sblb10l25 vishay general semiconductor document number: 88723 revision: 08-nov-07 www.vishay.com 3 figure 3. typical reve rse characteristics figure 4. typical junction capacitance 1.0 10 100 1000 0.01 0.1 20 0 100 40 60 8 0 t j = 100 c t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) 1 100 1000 10000 100 10 10 re v erse v oltage ( v ) j u nction capaci tance (pf) figure 5. typical transient thermal impedance 0.01 10 1 10 100 0.1 0.1 1 t - p u lse d u ration (s) transient thermal impedance (c/ w )
sbl10l25, sblf10l25, sblb10l25 vishay general semiconductor www.vishay.com document number: 88723 revision: 08-nov-07 4 package outline dimensions in inches (millimeters) to-220ac case pi n 2 pi n 1 0.635 (16.13) 0.625 (15. 8 7) 0.415 (10.54) max. 0.154 (3.91) dia. 0.14 8 (3.74) dia. 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) pi n 12 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.6 8 ) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.110 (2.79) 0.100 (2.54) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.145 (3.6 8 ) 0.135 (3.43) 0.603 (15.32) 0.573 (14.55) 0.055 (1.39) 0.045 (1.14) 0.1 8 5 (4.70) 0.175 (4.44) ito-220ac pi n 1 2 0.025 (0.64) 0.015 (0.3 8 ) 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.076 (1.93) ref. 45 ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.191 (4. 8 5) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.671 (17.04) 0.651 (16.54) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 7 ref. 7 ref. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.140 (3.56) dia. 0.125 (3.17) dia. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) to-263ab mo u nting pad layo u t 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
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