1 absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 20 v collector to base voltage v cbo 30 v emitter to collector voltage v eco 3v emitter to base voltage v ebo 5v collector current i c 10 ma collector power dissipation p c 100 mw operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C30 to +100 ?c PNZ0111 silicon npn phototransistor for optical control systems phototransistors 50 r l t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) v cc sig.out sig.in (input pulse) (output pulse) 10% 90% t d t r t f 45? 3? ?.08 0.15 4.8 0.15 2.03 ?.5 0.05 2-?.45 4.8 max. 2.67 0.15 16.0 1.0 1.27 unit : mm 2.54 1: emitter 2: base 2: collector 1 2 3 electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 0.05 2 m a collector photo current i ce(l) v ce = 10v, l = 500 lx *1 4.5 6 ma peak sensitivity wavelength l p v ce = 10v 900 nm acceptance half angle q measured from the optical axis to the half power point 80 deg. rise time t r *2 v cc = 10v, i ce(l) = 5ma 5 15 m s fall time t f *2 r l = 100 w 615 m s collector saturation voltage v ce(sat) i ce(l) = 1ma, l = 1000 lx *1 0.3 0.6 v *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 switching time measurement circuit note) please make a thorough study of the specifications. features high sensitivity wide spectral sensitivity base pin for easy circuit design wide directional sensitivity : q = 80 deg. (typ.)
2 phototransistors PNZ0111 p c ?ta 120 100 80 60 40 20 ambient temperature ta (?c ) collector power dissipation p c (mw) 0 20406080100 0 ?20 i ce(l) ?v ce 20 16 12 4 8 0 collector to emitter voltage v ce (v) ta = 25?c t = 2856k collector photo current i ce(l) (ma) 020 10 30 i ce(l) ?l 10 3 10 2 10 1 illuminance l (lx) collector photo current i ce(l) (ma) 10 10 2 10 3 10 ? 1 v ce = 10v ta = 25?c t = 2856k i ceo ?ta 10 2 10 ? 10 10 ? 1 ambient temperature ta (?c ) v ce = 10v dark current i ceo ( a) 10 ? ?20 0 40 80 20 60 100 collector photo current i ce(l) (ma) i ce(l) ?ta 10 1 ambient temperature ta (?c ) v ce = 10v t = 2856k ?40 0 40 80 120 10 ? spectral sensitivity characteristics 100 80 60 40 20 wavelength l (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 v ce = 10v ta = 25?c t r ?i ce(l) 10 3 10 2 10 1 collector photo current i ce(l) (ma) rise time t r ( s) 10 ? 110 10 ? 10 ? v cc = 10v ta = 25?c directivity characteristics 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? 20 100 80 60 40 relative sensitivity s (%) 1000 lx 500 lx 250 lx 100 lx 750 lx p c = 100mw l =2000 lx l = 500 lx 250 lx 100 lx r l = 1k 500 100
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