1 absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 20 v collector to base voltage v cbo * 30 v emitter to collector voltage v eco 3v emitter to base voltage v ebo * 5v collector current i c 30 ma collector power dissipation p c 150 mw operating ambient temperature t opr C25 to +85 ?c storage temperature t stg C30 to +100 ?c * pnz0108 only features high sensitivity : i ce(l) = 5 ma (min.) (at l = 100 lx) narrow directional sensitivity for effective use of light input fast response : t r = 5 m s (typ.) signal mixing capability using base pin (pnz0108) to-18 standard type package PNZ0107, pnz0108 silicon npn phototransistors for optical control systems phototransistors glass lens 6.3 0.3 1: emitter 2: collector unit : mm 1.0 0.2 1.0 0.15 ?.6 0.15 2.54 0.25 ?.75 max. 2-?.45 0.05 12.7 min. 45 3? 1 2 glass lens 6.3 0.3 1: emitter 2: base 3: collector unit : mm 1.0 0.2 1.0 0.15 ?.6 0.15 2.54 0.25 ?.75 max. 3-?.45 0.05 12.7 min. 45 3? 1 2 3 PNZ0107 pnz0108
2 electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 0.05 2 m a collector photo current i ce(l) v ce = 10v, l = 100 lx *1 515ma peak sensitivity wavelength l p v ce = 10v 900 nm acceptance half angle q measured from the optical axis to the half power point 10 deg. rise time t r *2 v cc = 10v, i ce(l) = 5ma 5 m s fall time t f *2 r l = 100 w 6 m s collector saturation voltage v ce(sat) i ce(l) = 1ma, l = 500 lx *1 0.3 0.6 v *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 switching time measurement circuit phototransistors PNZ0107/ pnz0108 p c ?ta 200 160 120 80 40 ambient temperature ta (?c ) collector power dissipation p c (mw) 0 20406080100 0 ?20 ta = 25?c t = 2856k i ce(l) ?v ce 20 16 12 4 8 0 collector to emitter voltage v ce (v) collector photo current i ce(l) (ma) 020 16 812 424 i ce(l) ?l 10 3 10 2 10 1 illuminance l (lx) collector photo current i ce(l) (ma) 10 10 2 10 3 10 ? 1 v ce = 10v ta = 25?c t = 2856k l = 1000 lx 500 lx 300 lx 200 lx 100 lx 50 lx 10 lx 50 r l t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) v cc sig.out sig.in (input pulse) (output pulse) 10% 90% t d t r t f
3 PNZ0107, pnz0108 phototransistors 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? directivity characteristics i ceo ?ta 10 2 10 ? 10 10 ? 1 ambient temperature ta (?c ) v ce = 10v dark current i ceo ( a) 10 ? ?20 0 40 80 20 60 100 i ce(l) ?ta 10 2 10 ambient temperature ta (?c ) v ce = 10v l = 100 lx t = 2856k collector photo current i ce(l) (ma) 1 ?40 0 40 80 120 spectral sensitivity characteristics 100 80 60 40 20 wavelength l (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 v ce = 10v ta = 25?c t r ?i ce(l) collector photo current i ce(l) (ma) rise time t r ( s) v cc = 10v ta = 25?c 10 4 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? t f ?i ce(l) collector photo current i ce(l) (ma) fall time t f ( s) v cc = 10v ta = 25?c 10 4 10 3 10 2 10 1 10 ? 10 ? 10 10 2 1 10 ? 90 100 80 70 60 50 40 30 relative sensitivity s(%) r l = 1k 500 100 r l = 1k 500 100
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