a doc. no : qw0905- rev. : date : - 2007 27 - aug. lrgb63793-a/s1 lrgb63793-a/s1 data sheet triple color led lamps ligitek electronics co.,ltd. property of ligitek only pb lead-free parts
25.0min note : 1.all dimension are in millimeter tolerance is 0.25mm unless otherwise noted. 2.specifications are subject to change without notice. 4.cathode blue 3.cathode green 2.common anode 1.cathode red 3-1.27typ 0.5 typ 1.0min 3 2 14 4.55 6.6 ligitek electronics co.,ltd. property of ligitek only lrgb63793-a/s1 part no. package dimensions 1/7 page 27.0min
viewing angle 2 1/2 (deg) page 2/7 dominant wave length dnm spectral halfwidth nm luminous intensity @20ma(mcd) forward voltage @20ma(v) note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. water clear ingan/gan ingan/gan blue lrgb63793-a/s1 algainp part no material red green color emittedlens 3.5 47030----4.055090060 typ. ---- 3.5 525 62520 36 1.7 ---- min. 2.6900 1500 4.0 1500 2200 84 60 min. max. typ. symbol parameter unit typical electrical & optical characteristics (ta=25 ) storage temperature tstg -30 ~ +100 pd power dissipation reverse current @5v operating temperature electrostatic discharge( * ) t opr esd ir peak forward current duty 1/10@10khz forward current i f i fp mw 120 120120 2000 -20 ~ +80 1000 1050 1000 v 50 a 5030 90100 urfsdgm ma 30 100 ma dbk absolute maximum ratings at ta=25 absolute maximum ratings ligitek electronics co.,ltd. property of ligitek only part no. lrgb63793-a/s1 peak wave length p nm 518 --- --- static electricity or power surge will damage the led. use of a conductive wrist band or anti-electrosatic glove is recommended when handing these led. all devices, equipment and machinery must be properly grounded. *
fig.6 directive radiation 25% 100% 0 25% 50% 75% -60 -30 0 75%100% 50% 30 60 1.0 0.5 700 650 600 550 0 1.06 1.04 1.02 1.00 0.98 0.96 3.0 2.5 6.0 4.0 5.0 fig.2 luminous intensity vs. forward current page 3/7 urfs chip 1.2 1.0 0.6 0.4 0.2 0.0 0.8 60100 80 02040 -40-20 0.94 100 80 2.0 1.5 1.0 0.5 60 40 20 0 -20 -40 3.0 2.0 1.0 0.0 150 100 50 0 150 100 50 0 0 ligitek electronics co.,ltd. property of ligitek only l u m i n o u s i n t e n s i t y n o r m a l i z e @ 2 0 m a forward current(ma) f o r w a r d c u r r e n t ( m a ) fig.1 forward current vs. forward voltage forward voltage(v) typical electro-optical characteristics curve l u m i n o u s i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 ambient temperature( ) fig.4 luminous intensity vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 wavelength (nm) r e l a t i v e i n t e n s i t y @ 2 0 m a ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature lrgb63793-a/s1 part no.
3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) 450 0.0 0.5 500550600 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 1.0 -40 0.8 -20 1.1 1.0 0.9 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 20 060 40100 80 ambient temperature( ) -40-20 02060 40100 80 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current typical electro-optical characteristics curve 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 1.0 10 dgm chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.0 1000 forward current(ma) 1.010100 page 4/7 fig.6 directive radiation 75% 100%50% -60 -30 0 50% 0 25%25%100% 75% 60 30 part no. lrgb63793-a/s1
3.0 2.0 1.0 1.5 2.5 fig.4 relative intensity vs. temperature 0.0 0.5 r e l a t i v e i n t e n s i t y @ 2 0 m a 1.0 wavelength (nm) 400 0.0 0.5 450 fig.3 forward voltage vs. temperature 0 ambient temperature( ) fig.5 relative intensity vs. wavelength f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 -40 0.8 -20 1.0 0.9 1.1 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 80 40 2060100 ambient temperature( ) -20 -40020406080100 3.0 2.5 fig.2 relative intensity vs. forward current 2.0 1.5 1.0 0.5 0.0 ligitek electronics co.,ltd. property of ligitek only typical electro-optical characteristics curve fig.1 forward current vs. forward voltage forward voltage(v) f o r w a r d c u r r e n t ( m a ) 1.0 0 1 2.0 10 1 100 dbk chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.0 page 5/7 forward current(ma) 1101001000 fig.6 directive radiation part no. lrgb63793-a/s1 75% 100%50% -60 -30 0 50% 0 25%25%100% 75% 60 30
note:1.wave solder should not be made more than one time. 2.you can just only select one of the soldering conditions as above. 120 260 temp( c) 5 /sec max 2 /sec max 60 seconds max 25 0 0 preheat 50 100 time(sec) 150 260 c3sec max soldering condition(pb-free) 1.iron: soldering iron:30w max temperature 350 c max soldering time:3 seconds max(one time only) distance:2mm min(from solder joint to body) dip soldering preheat: 120 c max preheat time: 60seconds max ramp-up 2 c/sec(max) ramp-down:-5 c/sec(max) solder bath:260 c max dipping time:3 seconds max distance:2mm min(from solder joint to body) 2.wave soldering profile ligitek electronics co.,ltd. property of ligitek only page 6/7 part no. lrgb63793-a/s1
this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 1.t.sol=260 5 2.dwell time= 10 1sec. 1.t.sol=230 5 2.dwell time=5 1sec solderability test solder resistance test this test intended to see soldering well performed or not. mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202:103b jis c 7021: b-11 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 jis c 7021: b-12 mil-std-883:1008 jis c 7021: b-10 the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs thermal shock test high temperature high humidity test the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. the purpose of this test is the resistance of the device under tropical for hours. 1.under room temperature 2.if=20ma 3.t=1000 hrs (-24hrs, +72hrs) 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) high temperature storage test low temperature storage test operating life test the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. ligitek electronics co.,ltd. property of ligitek only test condition reliability test: test item description page7/7 reference standard part no. lrgb63793-a/s1
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