?2004 osaoptolightgmbh?tel.+49(0)3065762683? fax+49(0)3065762681?contact@osaopto.com infra-red item no.: 123144 h 1. thisspecificationappliestogaalas/gaalasle dchips 2. structure 2.1 mesastructure 2.2 electrodes pside(anode) aualloy nside(cathode) aualloy 3. outlines(dimensionsinmicrons) wirebondcontactscanalsohaveaspidershape 4. electricalandopticalcharacteristics(t=25c) parameter symbol conditions min typ max unit forwardvoltage v f i f =20ma 1,30 1,50 v reversecurrent i r v r =5v 10 m a i f =20ma 1,3 1,8 outputpower* f e i f =50ma 3,2 4,5 mw switchingtime t r ,t f i f =20ma 500 ns peakwavelength l p i f =20ma 880 nm powermeasurementatosaongoldplate 5. packing diceonadhesivefilmwith1)wirebondsideonto p 2)backcontactontop 6. labeling type lotno. f e typ quantity min max nepitaxygaalas nelectrode pelectrode 200 pepitaxygaalas 365 120 365
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