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hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 1 general description the h m f 2 m 64f8vs is a high - speed flash read only memory (from) module containing 2 , 048,000 words organized in an x 64 bit configuration. the module consists of eight 2m x 8 from mounted on a 120 - pin, mmc connector fr4 - printed circ uit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also internally latch addre sses and data needed for the programming and erase operations. reading data out of the device is similar to reading from 12.0v flash or eprom devices. output enable (/oe) and write enable (/we) can set the memory input and output. the host system can detec t a program or erase operation is complete by observing the ready pin, or reading the dq7(data # polling) and dq6(toggle) status bits. when from module is disable condition the module is becoming power standby mode, system designer can get low - power desig n. all module components may be powered from a single + 3.0 v dc power supply and all inputs and outputs are lv ttl - compatible features w access time : 80, 90 and 120ns w high - density 16 mbyte design w high - reliability, low - power design w single + 3v 0.3v power supply w easy memory expansion w hardware reset pin(reset#) w fr4 - pcb design w 1 00 - pin designed 50 - pin fine pitch smm connector p1,p2 w minimum 1 ,0 00,000 write cycle guarantee per sector w 20 - year data retention at 125 o c w flexible sector archite cture w embedded algorithms w erase suspend / erase resume w the used device is 2mx8bit , k8d1616ubm from sec options marking w timing 9 0 n s access - 9 0 10 0 n s access - 10 0 120 n s access - 120 w packages 120 - pin smm f flash - rom module 16 mbyte ( 2 m x 64 - bit) ,120pi n smm,3.3v part no. hmf 2m64f8vs
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 2 p1 p2 pin symbol pin symbol pin symbol pin symbol 1 vcc 31 vss 1 vcc 31 vss 2 dq32 32 dq0 2 dq16 32 dq48 3 dq33 33 dq1 3 dq17 33 dq49 4 dq34 34 dq2 4 dq18 34 dq50 5 dq35 35 dq3 5 dq19 35 dq51 6 dq36 36 dq4 6 dq20 36 dq52 7 dq37 37 dq5 7 dq21 37 dq53 8 dq38 38 dq6 8 dq22 38 dq54 9 dq39 39 dq7 9 dq23 39 dq55 10 vcc 40 vss 10 vcc 40 vss 11 dq40 41 dq8 11 dq24 41 dq56 12 dq41 42 dq9 12 dq25 42 dq57 13 dq42 43 dq10 13 dq26 43 dq58 14 dq43 44 dq11 14 dq27 44 dq59 15 dq44 45 dq12 15 dq28 45 dq60 16 dq45 46 dq13 16 dq29 46 dq61 17 dq46 47 dq14 17 dq30 47 dq62 18 dq47 48 dq15 18 dq31 48 dq63 19 vcc 49 vss 19 vcc 49 vss 20 a1 50 a10 20 a20 50 nc 21 a2 51 a11 21 a0 51 bank0* 22 a3 52 a12 22 a16 52 vss 23 a4 53 a13 23 we1* 53 vss 24 a5 54 a14 24 we2* 54 we3* 25 vcc 55 vss 25 vcc 55 vss 26 a6 56 a15 26 oe* 56 we4* 27 a7 57 a17 27 reset* 57 we5* 28 a8 58 a18 28 we0* 58 we6* 29 a9 59 a19 29 ry _ by* 59 we7* 30 vcc 60 vss 30 vcc 60 vss no te: to stack pcb, the pin number 51 will be used for the upper second pcb. p in assignment
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 3 f u nctional block diagr am dq0 C dq 63 64 dq15 /a - 1 /we /oe dq 0 - 7 /ce u1 ry - by / reset /we /oe dq 8 - 15 /ce u 2 ry - by / reset /we /oe dq16 - 23 /ce u 3 ry - by / reset dq15/a - 1 /we /oe dq 24 - 31 /ce u 4 ry - by / reset / we0 / we 1 / we 2 / we 3 / oe / bank0 ry_/by /reset 21 a0 C a 20 /we /oe dq 32 - 39 /ce u 5 ry - by / reset /we /oe d q40 - 47 /ce u 6 ry - by / reset / we /oe dq 48 - 55 /ce u 7 ry - by / reset /we /oe dq 56 - 63 /ce u 8 ry - by / reset / we4 / we 5 / we 6 / we 7 a0 - 19 a0 a 1 - 20 dq15/a - 1 a0 - 19 dq15/a - 1 a0 - 19 a0 - 19 dq15/a - 1 a0 - 19 a0 a 1 - 20 dq15/a - 1 a0 - 19 dq15/a - 1 a0 - 19 dq15/a - 1 a0 - 19
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 4 truth table mode /oe /ce /we /reset dq ( /byte=l ) power standby x h x vcc 0.3v high - z standby not selected h l h h high - z active re ad l l h h d out active write or erase x l l h d in active note : x means don t care absolute maximum ratings parameter symbol rating voltage with respect to ground all other pins v in,out - 0. 5 v to vcc+0.5 v voltage with respect to ground vcc v cc - 0.5 v to + 4 .0v storage temperature t stg - 65 o c to +1 50 o c operating temperature t a - 40 o c to + 85 o c w stresses greater than those listed under " absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and fu nctional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. rec ommended dc operatin g conditions parameter symbol min typ . max vcc for 10% device supply voltages vcc 2.7v 3.0 3.6v ground v ss 0 0 0 dc and operating cha racteristics ( 0 o c t a 70 o c ) parameter test conditions symbol min max unit input leakage current vcc=vcc max, v in = gnd to vcc i l1 - 1.0 1.0 m a output leakage current vcc=vcc max, v out = gnd to vcc i l0 - 10 1.0 m a output high voltage i oh = - 2. 0 ma, vcc = vcc min v oh 0.85x vcc - v output low voltage i ol = 4.0 ma, vcc =vcc min v ol - 0.4 v 5mhz - 128 vcc act ive read current (1) /ce = v il , /oe = v ih , 1mhz i cc1 - 32 ma vcc active write curren t (2) /ce = v il , /oe=v ih i cc2 - 240 ma vcc standby current /ce, /reset=vcc 0.3v i cc3 - 240 ma low vcc lock - out voltage v lko 1.5 - v notes : 1. the i cc current listed includes both the dc operating current and the frequent component (at 5mhz). 2 . i cc active while embedded algorithm (program or erase) is in progress 3. not 100% tested
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 5 erase and programmin g performance limits parameter min. typ. max. unit comments block erase time - 0.7 15 sec chip erase time 27 sec excludes 00h programming prior to erasure word programming time - 11 330 m s chip programming time - 12 36 se c excludes system - level overhead tsop capacitance parameter symbol parameter descrip tion test setup min max unit c in input capacitance v in = 0 - 10 pf c out output capacitance v out = 0 - 10 pf c in2 control pin capacitance v in = 0 - 10 pf notes : capac itance is periodically sampled and not 100% tested. test specifications test condition value unit output load 1ttl gate input rise and full times 5 ns input pulse levels 0 to 3 v input timing measurement reference levels 1.5 v output timing measure ment reference levels 1.5 v 5.0v device under test 2.7k w diodes = in3064 or equivalent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig capacitance
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 6 ac characteristics u read only operations characteristics speed - 90 - 100 - 120 parameter des cription min max min max min max unit t rc read cycle time 90 100 120 ns t acc addre ss access time 90 100 120 ns t ce chip enable to access time 90 100 120 ns t oe output enable time 35 40 50 ns t df chip enable to output high - z 30 30 30 ns t oeh output enable hold time 0 0 0 ns t qh output hold time from addresses, /c e or /oe 0 0 0 ns u erase/program operations alternate / we controlled writes notes : : 1. not 100% tested 2 . the duration of the program or erase operation varies and is calculated in the internal algorithms. - 90 - 100 - 120 parameter description min max min max min max t wc write cycle time (1) 90 - 100 - 120 - ns t as address setup time 0 - 0 - 0 - ns t ah address hold time 45 - 45 - 50 - ns t ds data setup time 45 - 45 - 50 - ns t dh data hold time 0 - 0 - 0 - ns t oes output enable setup time 0 - 0 - 0 - ns t ghwl read recover time before write 0 - 0 - 0 - ns t cs /ce setup time 0 - 0 - 0 - ns t ch /ce hold time 0 - 0 - 0 - n s t wp write pulse width 45 - 45 - 50 - ns t wph write pulse width high 30 - 30 - 30 - ns t pgm programming operation 11 11 11 ns t bers block erase operation ( 2) 0.7 - 0.7 - 0.7 - ns t v cs vcc set up time 50 - 50 - 50 - ns t rb write recover time be fore ry_/by 0 - 0 - 0 - ns t rh /resrt high before read 50 - 50 - 50 - ns t rpd /resrt to power down time 20 - 20 - 20 - ns t rp /resrt pulse width 500 - 500 - 500 - ns t rsts /resrt setup time 500 - 500 - 500 - ns
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 7 u erase/program operations alternate /ce controlled writes - 90 - 100 - 120 parameter description min max min max min max t wc write cycle time (1) 90 - 100 - 120 - ns t as address setup time 0 - 0 - 0 - ns t ah address hold time 45 - 45 - 50 - ns t ds data setup time 45 - 45 - 50 - ns t dh data hold time 0 - 0 - 0 - ns t oes out put enable setup time 0 - 0 - 0 - ns t ghwl read recover time before write 0 - 0 - 0 - ns t cs /ce setup time 0 - 0 - 0 - ns t ch /ce hold time 0 - 0 - 0 - ns t wp write pulse width 45 - 45 - 50 - ns t wph write pulse width high 30 - 30 - 30 - ns t pg m programming operation 11 11 11 ns t bers block erase operation ( 2) 0.7 - 0.7 - 0.7 - ns notes : 1. not 100% tested 2 . this does not include the preprogramming time u read operations timing
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 8 u reset timing u pr ogram operations timing alternate / we controlled writes
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 9 alternate / ce controlled writes u chip/block erase operation timings
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 10 u data# polling times during internal routine operation u ry_ /by timeing during erase / program operation
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 11 u toggle# bit during internal routine operation
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 12 package dimmensions unit : mm pcb thickness: 1.3 0.1mm front side rear side
hanbit h m f2m 64f 8 v s url : www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 13 o r dering information part number density org. package component number vcc speed hmf2m64f8vs - 9 0 16mbyte x 64 120 pin - smm 8ea 3.3v 90ns hmf2m64f8vs - 100 16mbyte x 64 120 pin - smm 8ea 3.3v 100ns hmf2m64f8vs - 120 16mbyte x 64 120 pin - smm 8ea 3.3v 120ns

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