1994. 5. 11 1/2 semiconductor technical data KTC3226 epitaxial planar npn transistor revision no : 0 strobo flash application. high current aplication. features high dc current gain and excellent h fe linearity : h fe (1)=140 600 (v ce =1v, i c =0.5a) : h fe (2)=70(min.), 200(typ.) (v ce =1v, i c =2a). low saturation voltage : v ce(sat) =0.5v(max.) (i c =2a, i b =50ma). maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 30 v collector emitter voltage v ces 30 v v ceo 10 emitter base voltage v ebo 6 v collector current dc i c 2 a pulse (note1) i cp 5 emitter current i e -2 a collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =30v, i e =0 - - 100 na emitter cut-off current i ebo v eb =6v, i c =0 - - 100 na collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 10 - - v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 6 - - v dc current gain h fe (1) (note2) v ce =1v, i c =0.5a 140 - 600 h fe (2) v ce =1v, i c =2a 70 200 - collector-emitter saturation voltage v ce(sat) i c =2a, i b =50ma - 0.2 0.5 v base-emitter voltage v be v ce =1v, i c =2a - 0.86 1.5 v transition frequency f t v ce =1v, i c =0.5a - 150 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 27 - pf note 1 : pulse width # 10ms, duty cycle # 30% note 2 : h fe (1) classification a:140 240, b:200 330, c:300 450, d:420 600
1994. 5. 11 2/2 KTC3226 revision no : 0 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta safe operating area ce collector-emitter voltage v (v) 0.1 0.3 10 20 0.05 c collector current i (a) collector-emitter saturation ce(sat) 0.02 5 3 0.1 0.05 collector current i (a) c v - i 20 dc current gain h fe 500 5 3 0.1 0.05 collector current i (a) c h - i i - v c ce ce collector-emitter voltage v (v) 0 c 0 collector current i (a) 1234567 1 2 3 4 5 common emitter ta=25 c 50 40 30 10 0 i =5ma b v =1v common emitter 5 4 3 2 1 1.4 1.2 1.0 0.8 0.6 0.4 0.2 collector current i (a) 0 c 0 base-emitter voltage v (v) be be c i - v ta=100 c ta =25 c ta=-25 c fe c 1 0.3 30 50 100 300 common emitter v =1v ce ta=100 c ta=25 c ta=-25 c ce(sat) c voltage v (v) 1 0.3 0.5 0.05 0.1 0.3 0.6 ta=100 c ta=25 c ta=-25 c common emitter i /i =40 c b p (w) 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 2.5 3.0 3.5 tc=ta infinite heat sink no heat sink 1 2 1 2 5 3 1 0.1 0.3 0.5 1 3 5 10 single nonrepe- titive pulse ta=25 c pulse width 10ms duty cycle 30% ta=25 c curves must be derated linearly with increase in temperature ** * i max(pulsed) c * c i max(continuous) d c o pera t ion ( t a = 25 c) 10m s * 10 0 m s * * 20 ce < = < =
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