ds30347 rev. 1 - 1 1 of 3 dcx (xxxx) u epitaxial planar die construction built-in biasing resistors characteristic symbol value unit supply voltage, (3) to (1) v cc 50 v input voltage, (2) to (1) dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu dcx143tu dcx114tu v in -10 to +40 -10 to +40 -6 to +40 -5 to +12 -10 to +40 -5 vmax -5 vmax v output current dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu dcx143tu dcx114tu i o 30 30 70 100 50 100 100 ma output current all i c (max) 100 ma power dissipation p d 200 mw operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings npn section @ t a = 25 c unless otherwise specified a m j l f d b c h k cxx ym mechanical data case: sot-363, molded plastic case material - ul flammability rating 94v-0 terminals: solderable per mil-std-202, method 208 terminal connections: see diagram weight: 0.006 grams (approx.) new product p/n r1 r2 marking dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu dcx143tu dcx114tu 22k 47k 10k 2.2k 10k 4.7k 10k 22k 47k 47k 47k 10k - - c17 c20 c14 c06 c13 c07 c12 sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.80 2.20 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 all dimensions in mm r 1 r 1 r 2 r 2 r 1 r 1 r 1 , r 2 r 1 only schematic diagram dcx (xxxx) u complementary npn/pnp pre-biased small signal sot-363 dual surface mount transistor under development
ds30347 rev. 1 - 1 2 of 3 dcx (xxxx) u characteristic symbol min typ max unit test condition input voltage dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu v l(off) 0.5 0.5 0.3 0.5 0.5 1.1 1.1 1.1 v v cc = 5v, i o = 100 a dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu v l(on) 1.9 1.9 1.9 3.0 3.0 1.4 1.1 3.0 v o = 0.3, i o = 5ma v o = 0.3, i o = 2ma v o = 0.3, i o = 1ma v o = 0.3, i o = 5ma v o = 0.3, i o = 10ma output voltage dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu v o(on) 0.1 0.3 v i o /i l = 10ma / 0.5ma i o /i l = 10ma / 0.5ma i o /i l = 5ma / 0.25ma i o /i l = 5ma / 0.25ma i o /i l = 10ma / 0.5ma input current dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu i l 0.36 0.18 0.88 3.6 0.88 ma v i = 5v output current i o(off) 0.5 a v cc = 50v, v i = 0v dc current gain dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu g l 56 68 68 80 30 v o = 5v, i o = 5ma v o = 5v, i o = 5ma v o = 5v, i o = 10ma v o = 5v, i o = 10ma v o = 5v, i o = 5ma gain-bandwidth product* f t 250 mhz v ce = 10v, i e = 5ma, f = 100mhz electrical characteristics npn section @ t a = 25 c unless otherwise specified new product * transistor - for reference only characteristic (ddc143tu & ddc114tu only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 50 v i c = 1ma emitter-base breakdown voltage bv ebo 5 v i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current i ebo 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c /i b = 2.5ma / 0.25ma dcx143tu i c /i b = 1ma / 0.1ma dcx114tu dc current transfer ratio h fe 100 250 600 i c = 1ma, v ce = 5v gain-bandwidth product* f t 250 mhz v ce = 10v, i e = -5ma, f = 100mhz characteristic symbol value unit supply voltage, (3) to (1) v cc 50 v input voltage, (2) to (1) dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu dcx143tu dcx114tu v in +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 vmax +5 vmax v output current dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu dcx143tu dcx114tu i o -30 -30 -70 -100 -50 -100 -100 ma output current all i c (max) -100 ma power dissipation p d 200 mw operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings pnp section @ t a = 25 c unless otherwise specified under development
ds30347 rev. 1 - 1 3 of 3 dcx (xxxx) u characteristic symbol min typ max unit test condition input voltage dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu v l(off) -0.5 -0.5 -0.3 -0.5 -0.5 -1.1 -1.1 1.1 v v cc = -5v, i o = -100 a dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu v l(on) -1.9 -1.9 -1.9 -3.0 -3.0 -1.4 -1.1 -3.0 v o = -0.3, i o = -5ma v o = -0.3, i o =- 2ma v o = -0.3, i o = -1ma v o = -0.3, i o = -5ma v o = -0.3, i o = -10ma output voltage dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu v o(on) -0.1 -0.3 v i o /i l = -10ma / -0.5ma i o /i l = -10ma / -0.5ma i o /i l = -5ma / -0.25ma i o /i l = -5ma / -0.25ma i o /i l = -10ma /- 0.5ma input current dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu i l -0.36 -0.18 -0.88 -3.6 -0.88 ma v i = -5v output current i o(off) -0.5 a v cc = 50v, v i = 0v dc current gain dcx124eu dcx144eu dcx114yu dcx123ju dcx114eu g l 56 68 68 80 30 v o = -5v, i o = -5ma v o = -5v, i o = -5ma v o = -5v, i o = -10ma v o = -5v, i o = -10ma v o = -5v, i o = -5ma gain-bandwidth product* f t 250 mhz v ce = -10v, i e = -5ma, f = 100mhz * transistor - for reference only characteristic (dcx143tu & dcx114tu only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -50 v i c = -1ma emitter-base breakdown voltage bv ebo -5 v i e = -50 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current i ebo -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c /i b = 2.5ma / 0.25ma dcx143tu i c /i b = 1ma / 0.1ma dcx114tu dc current transfer ratio h fe 100 250 600 i c = -1ma, v ce = -5v gain-bandwidth product* f t 250 mhz v ce = -10v, i e = 5ma, f = 100mhz @ t a = 25 c unless otherwise specified electrical characteristics pnp section new product under development
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