features low saturation voltage v ce (sat) = ?.2 v typ. (at i c = ? a) small surface mounted package. table 1 absolute maximum ratings (ta = 25?) item symbol rating unit collector to base voltage v cbo ?0 v collector to emitter voltage v ceo ?5 v emitter to base voltage v ebo ? v collector current i c ? a collector power dissipation p c *1 w junction temperature tj 150 c storage temperature tstg ?5 to +150 c * when using the alumina ceramic board (12.5 20 0.7 mm) table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo ?0 v i c = ?0 ?, i e = 0 collector to emitter breakdown voltage v (br)ceo ?5 v i c = ? ma, r be = emitter to base breakdown voltage v (br)ebo 5v i e = ?0 ?, i c = 0 collector cutoff current i cbo ?.1 ? v cb = ?4 v, i e = 0 emitter cutoff current i ebo ?.1 ? v eb = ? v, i c = 0 dc current transfer ratio h fe 1* 160 500 v ce = ? v, i c = ?.1 a dc current transfer ratio h fe 2 100 v ce = ? v, i c = ? a collector to emitter saturation voltage v ce(sat) ?.2 ?.3 v i c = ? a, i b = ?.2 a base to emitter saturation voltage v be(sat) ?.2 v i c = ? a, i b = ?.2 a * the 2SB1518 is grouped by h fe 1 as follows. grade d e mark jh jj h fe 1 160 to 320 250 to 500 upak 1. base 2. collector 3. emitter 1 2 3 2SB1518 silicon pnp epitaxial low frequency power amplifier, switching
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