savantic semiconductor product specification silicon npn power transistors 2SC3060 description with to-3 package ultra-fast switching wide area of safe operation high breakdown voltage applications switching regulators motor controls ultrasonic oscillators class c and d amplifiers deflection circuits pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 850 v v ebo emitter-base voltage open collector 7 v i c collector current 5 a i cp collector current-pulse pw / 25s,duty cycle / 50% 8 a i b base current 3 a p c collector power dissipation t c =25 150 w t j junction temperature 175 t stg storage temperature -65~175 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3060 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;r be = > 850 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 1200 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =2a; i b =0.4a 1.5 v v be (sat) base-emitter saturation voltage i c =2a; i b =0.4a 2.0 v v cb =1000v; i e =0 100 a i cbo collector cut-off current v cb =1000v; i e =0, t c =100 1 ma i ebo emitter cut-off current v eb =6v; i c =0 100 a h fe dc current gain i c =2a ; v ce =5v 10 30 f t transition frequency i c =0.5a ; v ce =10v 15 mhz c ob output capacitance i e =0; v cb =10v,f=1mhz 120 pf switching times t r rise time 0.5 s t stg storage time 3.5 s t f fall time v cc =400v; i c =2a i b1 =0.2a;i b2 =-0.6a; 0.3 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3060 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)
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