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  2005. 6. 24 1/2 semiconductor technical data PG05FSESC single line tvs diode for esd protection in portable electronics revision no : 1 protection in portable electronics applications. features 100 watts peak pulse power (tp=8/20 s) transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 10a(tp=8/20 s) small package for use in portable electronics. suitable replacement for multi-layer varistors in esd protection applications. (* multi-layer varistors [0402 size]) protects on i/o or power line. low clamping voltage. low leakage current. applications cell phone handsets and accessories. microprocessor based equipment. personal digital assistants (pda?s) notebooks, desktops, & servers. portable instrumentation. pagers peripherals. maximum rating (ta=25 ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 100 w peak pulse current (tp=8/20 s) i pp 10 a junction temperature t j -55 150 storage temperature t stg -55 150 marking 5s cathode mark 21 21 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 6 - - v reverse leakage current i r v rwm =5v - - 5 a clamping voltage v c i pp =5a, tp=8/20 s - - 9.8 v i pp =10a, tp=8/20 s - - 10.0 junction capacitance c j v r =0v, f=1mhz - - 80 pf
2005. 6. 24 2/2 PG05FSESC revision no : 1 non-repetitive peak pulse power vs. pulse time pulse duration t p ( s) 0.1 1 100 10 peak pulse power p pk (kw) 1000 0.01 0.1 1 10 peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td@lpp/2 rated power or i pp (%) 0 110 70 50 25 0 power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 ambient temperature ta ( c) peak pulse current i pp (%) 0 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60 capacitance c (pf) 0 j 2 1 0 reverse voltage v r (v) c j - v r 345 20 40 80 60 100


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