6-274 file number 2876.2 caution: these devices are sensitive to electrostatic discharge; follow proper esd handling procedures. http://www.intersil.com or 407-727-9207 | copyright ? intersil corporation 1999 rfP4N05L, rfp4n06l 4a, 50v and 60v, 0.800 ohm, logic level, n-channel power mosfets the rfP4N05L and rfp4n06l are n-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. formerly developmental type ta09520. features ? 4a, 50v and 60v ?r ds(on) = 0.800 w ? design optimized for 5v gate drives ? can be driven directly from qmos, nmos, ttl circuits ? compatible with automotive drive requirements ? soa is power-dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? majority carrier device ? related literature - tb334 guidelines for soldering surface mount components to pc boards symbol packaging jedel to-220ab ordering information part number package brand rfP4N05L to-220ab rfP4N05L rfp4n06l to-220ab rfp4n06l note: when ordering, include the entire part number. g d s gate drain (flange) source drain data sheet july 1999
6-275 absolute maximum ratings t c = 25 o c, unless otherwise speci?ed rfP4N05L rfp4n06l units drain to source voltage (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v dss 50 60 v drain to gate voltage r gs = 20k w (note 1) . . . . . . . . . . . . . . . . . . . . . . v dgr 50 60 v gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gs 10 10 v drain current, rms continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 44a pulsed (note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i dm 10 10 a power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 25 25 w derating above t c = 25 o c. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 w/ o c operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 -55 to 150 o c maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . .t l package body for 10s, see techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . t pkg 300 260 300 260 o c o c caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio nofthe device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied. note: 1. t j = 25 o c to 125 o c. electrical speci?cations t c = 25 o c, unless otherwise speci?ed parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 250 m a, v gs = 0v rfP4N05L 50 - - v rfp4n06l 60 - - v gate to threshold voltage v gs(th) v gs = v ds , i d = 250 m a1-2v zero gate voltage drain current i dss v ds = rated bv dss --25 m a v ds = 0.8 x rated bv dss , t c = 125 o c - - 250 m a gate to source leakage current i gss v gs = 10v, v ds = 0 - - 100 na drain to source on voltage (note 2) v ds(on) i d = 4a, v gs = 5v - - 3.2 v drain to source on resistance (note 2) r ds(on) i d = 4a, v gs = 5v, (figures 6, 7) - - 0.800 w turn-on delay time t d(on) i d ? 4a, v dd = 30v, r g = 6.25 w , r l = 7.5 w , v gs = 5v (figures 10, 11, 12) -1020ns rise time t r - 65 130 ns turn-off delay time t d(off) -2040ns fall time t f -3060ns input capacitance c iss v gs = 0v, v ds = 25v, f = 1mhz (figure 9) - - 225 pf output capacitance c oss - - 100 pf reverse-transfer capacitance c rss - - 40 pf thermal resistance junction to case r q jc --5 o c/w source to drain diode speci?cations parameter symbol test conditions min typ max units source to drain diode voltage (note 2) v sd i sd = 1a - - 1.4 v reverse recovery time t rr i sd = 2a, dl sd /dt = 100a/ m s - 150 - ns notes: 2. pulsed: pulse duration = 300 m s max, duty cycle = 2%. 3. repetitive rating: pulse width limited by maximum junction temperature. rfP4N05L, rfp4n06l
6-276 typical performance curves unless otherwise speci?ed figure 1. normalized power dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature figure 3. forward bias safe operating area figure 4. saturation characteristics figure 5. transfer characteristics figure 6. drain to source on resistance vs drain current 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 t c , case temperature ( o c) power dissipation multiplier 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 4.5 1 0.10 0.01 10 10 100 v ds , drain to source voltage (v) i d , drain current (a) 1 operation in this area limited by r ds(on) t j = max rated rfP4N05L rfp4n06l t c = 25 o c 12 10 8 0 0 12 34 567 i d , drain current (a) v ds, drain to source voltage (v) pulse duration = 80 m s t c = 25 o c 2 4 6 v gs = 2v v gs = 2.5v v gs = 3v v gs = 3.5v v gs = 4v v gs = 4.5v v gs = 5v v gs = 7.5v v gs = 10v duty cycle = 0.5% max -40 o c 25 o c v ds = 10v i ds(on) , drain to source current (a) 3 2 1 123 45 6 v gs , gate to source voltage (v) 4 -40 o c pulse duration = 80 m s 125 o c 125 o c 0 5 6 duty cycle = 0.5% max r ds(on) , drain to source on i d, drain current (a) 0.8 0.6 0.4 0.2 0 024 resistance ( w ) 1 25 o c -40 o c 125 o c 6 1.2 1.4 v gs = 5v pulse duration = 80 m s duty cycle = 0.5% max rfP4N05L, rfp4n06l
6-277 figure 7. normalized drain to source on resistance vs junction temperature figure 8. normalized gate threshold voltage vs junction temperature figure 9. capacitance vs drain to source voltage note: refer to intersil application notes an7254 and an7260 figure 10. normalized switching waveforms for constant gate current test circuits and waveforms figure 11. switching time test circuit figure 12. resistive switching waveforms typical performance curves unless otherwise speci?ed (continued) 1.5 1.0 0.5 -50 0 50 100 150 t j , junction temperature ( o c) v gs = 5v i d = 4a normalized drain to source on resistance 2.0 0 1.5 1.0 2.0 50 0 50 100 150 t j , junction temperature ( o c) normalized gate threshold voltage v gs = v ds i d = 250 m a 200 0 0.5 01020304050 c, capacitance (pf) v ds, drain to source voltage (v) 400 300 200 100 0 c rss c oss c iss v gs = 0v, f = 1mhz c iss = c gs + c gd c rss = c gd c oss ? c ds + c gs 60 45 30 15 0 10 8 6 4 0 2 gate source voltage i g(ref) i g(act) 0.75bv dss 0.50bv dss 0.25bv dss v dd = bv dss v dd = bv dss r l = 15 w i g(ref) = 0.095ma v gs = 5v v gs , gate to source voltage (v) t, time ( m s) 20 80 drain source i g(ref) i g(act) voltage v ds , drain to source voltage (v) v gs r l r g dut + - v dd t on t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs 0 0 rfP4N05L, rfp4n06l
6-278 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?cation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site http://www.intersil.com sales of?ce headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (407) 724-7000 fax: (407) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil (taiwan) ltd. 7f-6, no. 101 fu hsing north road taipei, taiwan republic of china tel: (886) 2 2716 9310 fax: (886) 2 2715 3029 rfP4N05L, rfp4n06l
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