sanrex 50 seaview blvd. port washington, ny 11050-4618 ph.(516)625-1313 fax(516)625-8845 e-mail: semi@sanrex.com FBA50CA45/50 mosfet module ul;e76102 m FBA50CA45/50 is a dual power mosfet module designed for fast swiching applications of high voltage and current. 2 devices are serial connected. the mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ? i d 1 50a, v dss 1 500v ? suitable for high speed switching applications. ? low on resistance. ? wide safe operating areas. applications ups cvcf , motor control, switching power supply, etc. 107.5 ? 0.6 19 14 32 19 19 name plate 2 6.5 93 ? 0.3 35 ? 0.6 31max 30max 4 m5 8 4174 765 tab 110 5 unit a maximum ratings tj 1 25 ? vomfttpuifsxjtftqfdjgjfe electrical characteristics tj 1 25 ? vomfttpuifsxjtftqfdjgjfe symbol item conditions ratings FBA50CA45 fba50ca50 unit v dss drain-source voltage 450 500 v v gss gate-source voltage ? 20 v i d drain current d.c. pulse 50 a i dp 100 -i d source current 50 a p t total power dissipation tc 1 25 ? 320 w tj channel temperature 150 ? tstg storage temperature 40 up 125 ? v iso isolation voltage r.m.s. a.c. 1minute 2500 v mounting torque mounting m6 terminal m5 recommended value 2.5 - 3.9 25 - 40 4.7 48 n k m kgf k b recommended value 1.5 - 2.5 15 - 25 2.7 28 mass typical value 220 g symbol item conditions ratings min. typ. max. ? 1.0 unit i gss gate leakage current v gs 1? 20v | v ds 1 0v a 1.0 i dss zero gate voltage drain current v gs 1 0v | v ds 1 500v ma 450 v br dss drain-source breakdown voltage FBA50CA45 fba50ca50 v gs 1 0v | i d 1 1ma v 500 1.0 5.0 v gs th gate-source threshold voltage v ds 1 v gs | i d 1 10ma v 120 r ds on drain-source on-state resistance i d 1 25a | v gs 1 15v m
3.0 v ds on drain-source on-state voltage i d 1 25a | v gs 1 15v v 30 gfs forward transconductance v ds 1 10v | i d 1 25a s 10000 ciss input capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 1900 coss output capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 750 crss reverse transfer capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 60 tr switching time rise time turn-on delay time fall time turn-off delay time r l 1 12
| r gs 1 50
| v gs 1 15v i d 1 25a | r g 1 5
ns 60 td on 650 tf 130 td off 1.5 v sds diode forward voltage ? i d 1 25a | v gs 1 0v v 700 trr reverse recovery time ? i d 1 25a | v gs 1 0v | di / dt 1 100a / s ns 0.39 rth j-c thermal resistance ? / w q %4 % ( 4 4 ( 4 4 i u y t w er
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