? 2009 ixys all rights reserved 1 - 3 20090209c fmd 15-06kc5 fdm 15-06kc5 ixys reserves the right to change limits, test conditions and dimensions. advanced technical information i d25 = 15 a v dss = 600 v r ds(on) max = 0.165 coolmos ? 1) power mosfet with hiperdyn ? fred buck and boost topologies features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500 v electrical isolation - low drain to tab capacitance (< 40 pf) ? fast coolmos ? 1) power mosfet 4 th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (uis) - low thermal resistance due to reduced chip thickness ? enhanced total power density ? hiperdyn? fred - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation applications ? switched mode power supplies (smps) ? uninterruptible power supplies (ups) ? power factor correction (pfc) advantages ? easy assembly: no screws or isolation foils required ? space savings ? high power density ? high reliability mosfet t symbol conditions maximum ratings v dss t vj = 25c 600 v v gs 20 v i d25 i d90 t c = 25c t c = 90c 15 11 a a e as e ar single pulse repetitive 522 0.79 mj mj dv/dt mosfet dv/dt ruggedness v ds = 0...480 v 5 0 v/ns electrically isolated back surface 2500 v electrical isolation n-channel enhancement mode low r dson , high v dss mosfet ultra low gate charge i d = 7.9 a; t c = 25c symbol conditions characteristic values (t vj = 25 c, unless otherwise speci? ed) min. typ. max. r dson v gs = 10 v; i d = 12 a 150 165 m v gs(th) v ds = v gs ; i d = 0.79 ma 2.5 3 3.5 v i dss v ds = 600 v; v gs = 0 v t vj = 25c t vj = 125c 10 1a a i gss v gs = 20 v; v ds = 0 v 100 na c iss c oss v gs = 0 v; v ds = 100 v f = 1 mhz 2000 100 pf pf q g q gs q gd v gs = 0 to 10 v; v ds = 400 v; i d = 12 a 40 9 13 52 nc nc nc t d(on) t r t d(off) t f e on e off e rec off v gs = 10 v; v ds = 400 v i d = 12 a; r g = 3.3 12 5 50 5 tbd tbd tbd ns ns ns ns mj mj mj r thjc r thch with heat transfer paste 0.35 1.1 k/w k/w 1) coolmos ? is a trademark of in? neon technologies ag. isoplus i4 ? 1 5 isolated back surface q e72873 fmd 4 3 1 2 d t fdm 5 3 4 2 t d
? 2009 ixys all rights reserved 2 - 3 20090209c fmd 15-06kc5 fdm 15-06kc5 ixys reserves the right to change limits, test conditions and dimensions. advanced technical information mosfet t source-drain diode symbol conditions characteristic values (t vj = 25 c, unless otherwise speci? ed) min. typ. max. i s v gs = 0 v 12 a v sd i f = 12 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 12 a; -di f /dt = 100 a/s; v r = 400 v 390 7.5 38 ns c a component symbol conditions maximum ratings t vj t stg operating storage -55...+150 -55...+125 c c v isol i isol < 1 ma; 50/60 hz 2500 v~ f c mounting force with clip 20...120 n symbol conditions characteristic values min. typ. max. c p coupling capacity between shorted pins and mounting tab in the case 40 pf d s , d a d s , d a pin - pin pin - backside metal 1.7 5.5 mm mm weight 9 g symbol conditions characteristic values min. typ. max. v f i f = 15 a t vj = 25 c i f = 30 a 2.50 3.00 v v i f = 15 a t vj = 150 c i f = 30 a 2.00 2.55 a a i r v r = v rrm t vj = 25 c t vj = 150 c 1 0.08 a ma i fsm t = 10 ms (50 hz), sine; t vj = 45 c 150 a i rm t rr i f = 20 a; v r = 100 v; t vj = 25 c -di f /dt = 200 a/s 3 35 a ns r thjc r thjh with heat transfer paste 0.8 2.4 k/w k/w diode d (data for series connection) symbol conditions maximum ratings v rrm t vj = 25 c to 150c 600 v i f25 i f90 t c = 25 c t c = 90 c 15 8 a a
? 2009 ixys all rights reserved 3 - 3 20090209c fmd 15-06kc5 fdm 15-06kc5 ixys reserves the right to change limits, test conditions and dimensions. advanced technical information isoplus i4 tm outline
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