micropac industries, inc. optoelectronic products division ? ?? ? 725 e.walnut str., garland, tx 75040 ? ?? ? (972)272-3571 ? ?? ? fax (972)487-6918 www.micropac.com e-mail: optosales @ micropac.com 66143 quad channel, hermetic 20 pin lcc, optically coupled isolator mii optoelectronic products division features: ? high reliability ? base lead provided for conventional transistor biasing ? very high gain, high voltage transistor ? stability over wide temperature range. ? +1kvdc electrical isolation ? screening available applications: ? eliminate ground loops ? level shifting ? line receiver ? switching power supplies ? motor control description the mii 66143 -002, -003 and -004 are optically coupled isolators, consisting of four gaalas leds and four silicon phototransistors mounted and coupled in a miniature surface mount hermetic leadless chip carrier. all electrical characteristics of each channel are identical to the jedec registered 4n47 (-002), 4n48 (-003) and 4n49 (-004). each unit contains four channels. these solid state couplers are ideal for designs where board space and device weight are important design considerations. absolute maximum ratings input-to-output voltage (see note 1)........................................................................................... ..........................................+1kv collector-base voltage ...........................................................................................................................................................45v collector-emitter voltage (value applies to emitter-base open-circuited & the input-diode equal to zero) ....................... ...40v emitter-base voltage ........................................................................................................... .....................................................7v input diode reverse voltage ...................................................................................................................................................3v input diode continuous forward current at (or below) 65c free-air temperature (see note 2).................................... .40ma input diode power dissipation........................................................................................................................................... 60mw continuous collector current................................................................................................... ............................................50ma continuous transistor power dissipation at (or below) 25c free-air temperature (see note 3)................................ 300 mw storage temperature ............................................................................................................ ............................ -65c to +150c operating free-air temperature range........................................................................................... ................. -55c to +125c lead solder temperature (1/16? (1.6mm) from case for 10 seconds)............................................................... ................240c notes: 1. measured with inputs shorted together and outputs shorted together. 2. derate linearly to 125c free-air temperature at the rate of 0.67 ma/c above 65c. 3. derate linearly to 125c free-air temperature at the rate of 3 mw/c. package dimensions schematic diagram all dimensions are in inches [millimeters] mii 66171 xxxxx 0.350 [8.89] +0.010 [0.25] -.005[0.13] sq. 0.240 [6.10]sq. 0.200 [5.08]sq. 0.250 [6.35] .006 [0.15] sq. no. 1 lead 0.314 [7.98] .004 [0.10] sq. 0.066 [1.68] 0.020 [0.51] 0.025 [0.64] 0.050 [1.27] typ 0.075 [1.91] ref r0.008 [r0.20]typ .040 x 45 .020 x 45 no. 1 lead 0.200 [5.08] typ 0.025 .003 0.053 [1.34] 0.075 [1.91] (3 pl) .002 .002 .003 a k c e b k b e a c k b e a c k b e a c 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
micropac industries, inc. optoelectronic products division ? ?? ? 725 e.walnut str., garland, tx 75040 ? ?? ? (972)272-3571 ? ?? ? fax (972)487-6918 www.micropac.com e-mail: optosales @ micropac.com 66143 single channel, 20 pin lcc, equivalent to 4n47, 4n48 and 4n49 electrical characteristics t a = 25 c unless otherwise specified. parameter symbol min typ max units test conditions note input diode static reverse current i r 100 a v r = 3v 1 input diode forward voltage -55 c +25 c +100 c v f v f v f 1.0 0.8 0.7 1.7 1.5 1.3 v v v i f = 10ma output transistor t a = 25 c unless otherwise specified. collector-base breakdown voltage v (br)cbo 45 v i c = 100 a, i b = 0, i f = 0 collector-emitter breakdown voltage v (br)ceo 40 v i c = 1ma, i b = 0, i f = 0 emitter-base breakdown voltage v (br)ebo 7vi c = 0ma, i e = 100 a, i f = 0 coupled characteristics t a = 25 c unless otherwise specified. on state collector current -002 t a = +25 c -003 -004 i c(on) 0.5 1.0 2.0 - 5 10 ma ma ma v ce = 5v, i b = 0, i f = 1ma v ce = 5v, i b = 0, i f = 1ma v ce = 5v, i b = 0, i f = 1ma on state collector current -002 t a = -55 c -003 -004 i c(on) 0.7 1.4 2.8 ma ma ma v ce = 5v, i b = 0, i f = 2ma v ce = 5v, i b = 0, i f = 2ma v ce = 5v, i b = 0, i f = 2ma on state collector current -002 t a = +100 c -003 -004 i c(on) 0.5 1.0 2.0 ma ma ma v ce = 5v, i b = 0, i f = 2ma v ce = 5v, i b = 0, i f = 2ma v ce = 5v, i b = 0, i f = 2ma on-state collector base current i cb(on) 30 av cb = 5v, i e = 0, i f = 10ma off state collector current i c(off) 100 na v ce = 20v, i b = 0, i f = 0ma 1 off state collector current, t a = +100 c i c(off) 100 av ce = 20v, i b = 0, i f = 0ma 1 collector-base dark current i cb(off) 10 na v cb = 20v, i e = 0, i f = 0 collector-emitter saturation voltage -002 -003 -004 v ce(sat) v ce(sat) v ce(sat) 0.3 0.3 0.3 v v v i f = 2ma, i c = 0.5ma, i b = 0 i f = 2ma, i c = 1ma, i b = 0 i f = 2ma, i c = 2ma, i b = 0 input to output resistance r io 10 11 ? v in-out = 1kv, t w = 100 s, duty cycle < 1% 2 input to output capacitance c io 5 pf f = 1mhz, v in-out = 0 rise time (phototransistor operation) -002 or -003 fall time -004 t r or t f 10 10 10 20 20 25 s s s v cc = 10v, i f = 5ma, r l = 100 ? rise time (photodiode operation) or fall time t r or t f 0.85 0.85 0.85 3 3 3 sv cc = 10v, i f = 5ma, r l = 100 ? 1 notes: 1. parameter applies to all part numbers. 2. these parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted tog ether. recommended operating conditions: parameter. symbol min max units input current, low level i fl 0 100 a input current, high level i fh 110ma supply voltage v cc 5.0 2 0 v
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