sup/sub60n06-18 siliconix s-47970erev. c, 08-jul-96 1 n-channel enhancement-mode transistors product summary v (br)dss (v) r ds(on) ( ) i d (a) 60 0.018 60 d g s n-channel mosfet sup60n06-18 sub60n06-18 drain connected to tab to-220ab top view gd s to-263 s g top view d absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 60 c on ti nuous d ra i n c urren t (t j = 175 c) t c = 100 c i d 39 a pulsed drain current i dm 120 a avalanche current i ar 60 repetitive avalanche energy a l = 0.1 mh e ar 180 mj power dissipation t c = 25 c (to-220ab and to-263) p d 120 b w p ower di ss i pa ti on t a = 25 c (to-263) c p d 3.7 w operating junction and storage temperature range t j , t stg 55 to 175 c thermal resistance ratings parameter symbol limit unit junction to ambient pcb mount (to-263) c r thja 40 j unct i on-to- a m bi ent free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 1.25 notes: a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1o square pcb (fr-4 material). updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70290. a spice model data sheet is available for this product (faxback document #70540).
sup/sub60n06-18 2 siliconix s-47970erev. c, 08-jul-96 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v gate threshold voltage v gs(th) v ds = v gs , i ds = 1 ma 2.0 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 60 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 v ds = 60 v, v gs = 0 v, t j = 175 c 150 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 60 a b v gs = 10 v, i d = 30 a 0.014 0.018 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.024 0.030 v gs = 10 v, i d = 30 a, t j = 175 c 0.031 0.036 forward transconductance b g fs v ds = 15 v, i d = 30 a 49 s dynamic a input capacitance c iss 2000 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 400 pf reversen transfer capacitance c rss 115 total gate charge c q g 39 60 gate-source charge c q gs v ds = 30 v, v gs = 10 v, i d = 60 a 12 nc gate-drain charge c q gd 10 turn-on delay time c t d(on) 12 30 rise time c t r v dd = 30 v, r l = 0.5 11 30 ns turn-off delay time c t d(off) dd , l i d 60 a, v gen = 10 v, r g = 2.5 25 50 ns fall time c t f 15 30 source-drain diode ratings and characteristics (t c = 25 c) a continuous current i s 60 a pulsed current i sm 120 a forward voltage b v sd i f = 60 a, v gs = 0 v 1.6 v reverse recovery time t rr 60 ns peak reverse recovery current i rm(rec) i f = 60 a, di/dt = 100 a/ s 6.0 a reverse recovery charge q rr 0.4 c notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
sup/sub60n06-18 siliconix s-47970erev. c, 08-jul-96 3 typical characteristics (25 c unless otherwise noted) output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) ) v gs v gs gate-to-source voltage (v) transconductance (s) g fs 0 25 50 75 100 0246810 0 500 1000 1500 2000 2500 3000 0 10203040 0 2 4 6 8 10 0 10203040 0 10 20 30 40 50 60 70 0 1020304050 0 0.004 0.008 0.012 0.016 0.020 0 20406080100 0 20 40 60 80 100 0246810 25 c 55 c 5 v t c = 125 c v gs = 10 v i d = 60 a v gs = 10, 9, 8, 7 v 6 v v gs = 10 v c iss c oss c rss t c = 55 c 25 c 125 c 4 v
sup/sub60n06-18 4 siliconix s-47970erev. c, 08-jul-96 typical characteristics (25 c unless otherwise noted) on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) ) source current (a) i s 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 50 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c thermal ratings normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 5 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 3 safe operating area maximum avalanche and drain current vs. case temperature t c case temperature ( c) v ds drain-to-source voltage (v) drain current (a) i d drain current (a) i d 100 200 10 0.1 0.1 1 10 100 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180 0.2 0.1 0.02 duty cycle = 0.5 100 s 1 ms 10 ms 100 ms dc t c = 25 c single pulse limited by r ds(on) 1 0.05 single pulse 10 s
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