preliminary specification the preliminary specifications data sheet contain typical electrical specifications which may change prior to final introductio n. m/a-com ltd. north america: tel. (800) 366-2266 i asia/pacific: tel. +85 2 2111 8088 i europe: tel. +44 (1344) 869-595 fax (800) 618-8883 fax +85 2 2111 8087 fax +44 (1344) 300-020 high reliability semiconductor schottky detector diodes features x low i/f noise x high sensitivity x space qualified description the ml40215-s is a low barrier n type silicon detector diode in the ods 120 miniature ceramic pill type package, or in ods 276 (the same package with leads attached). these devices are suitable for use in detector applications at frequencies up to 18 ghz. the test tables shown on this data sheet are presented in the same format as esa/scc 5010 detail specifications. these devices have been tested and screened to esa/scc 5010 level b, lot acceptance level 1, either by similarity with another diode type or as required by the project. a new wafer lot will normally require lot acceptance level 2 testing; repeat production (assembly) lots may only require level 3 testing. alternative cases styles are available, many of which are suitable for space application. m/a-com can provide mixer and detector diodes for most applications. the semiconductor master catalogue contains outline drawings for alternative case styles as well as information on the following devices: v1.00 ods 120 outline ods 276 outline x surface mount diodes sot-23 and sot-143. x beam lead and chip diodes. x beamless beam lead diodes ( surmount tm ). x tees and anti-parallel pair diodes. x ring and bridge quad diodes. x axial lead diodes. x p type detector diodes. x gallium arsenide schottky mixer diodes. maximum ratings (tamb = 25c) no. characteristics symbol maximum ratings units remarks 1. peak incident r f power p pk 1.0 w frequency 2.6 to 12.4 ghz, 1sec max. pulse length. see note 1 2. peak incident r f power p pk 0.5 w frequency 12.4 to 18.0 ghz, 1sec max. pulse length. see note 1 3. cw rf power p cw 150 mw frequency 2.6 to 12.4 ghz. see note 1 4. cw rf power p cw 100 mw frequency 12.4 to 18.0 ghz. see note 1 5. dc reverse voltage v r 2.0 v 6. dc forward current i f 20 ma see note 1 7. operating temperature t op -65 to +150 c 8. storage temperature t sto -65 to +150 c 9. soldering temperature t sol 230 c see note 2 notes: 1. derate linearly to 0 mw from 25c to 150c 2. for a max duration of 5 seconds and at a distance greater than 1.5 mm from the body of the 276 package 3. for a duration of 5 seconds at a distance greater than 1.5 mm from the body. ML40215-S-120 ml40215-s-276
schottky detector diodes ml 40215-s-120, ml 40215-s-276 the preliminary specifications data sheet contain typical electrical specifications which may change prior to final introductio n. m/a-com ltd. north america: tel. (800) 366-2266 i asia/pacific: tel. +85 2 2111 8088 i europe: tel. +44 (1344) 869-595 fax (800) 618-8883 fax +85 2 2111 8087 fax +44 (1344) 300-020 electrical measurements at room temperature d.c. and a.c. parameters mil-std-750 test limits no. characteristics symbol test method conditions min max units 1 reverse current i r1 4016 v r = 1v - 500 na 2 forward voltage v f 4011 i f = 1ma - 0.4 v 3 tangential signal t ss bs9300 f = 16 ghz -52 dbm sensitivity 1411 see note 1 4 video impedance z v bs9300 f = 16 ghz 1 2 kohm 1404 see note 2 notes : 1. t ss is measured with a video amplifier bandwidth of 2 mhz and a nominal amplifier noise figure of 3 db. dc impedance is 10 kohms and dc forward bias is 20a. 2. video impedance is measured with rf power of -30dbm and a dc forward bias of 20 a. electrical measurements at high and low temperature, -55 and +150c mil-std-750 test limits no. characteristics symbol test method conditions min max units 1 reverse current i r 4016 v r - 1v - 100 a parameter drift values mil-std-750 test no. characteristics symbol test method conditions change limits ' 1 forward voltage v f 4011 i f = 1 ma 10% conditions for high temperature reverse bias burn-in no. characteristics symbol conditions units 1 reverse voltage v r 1.0 v 2 ambient temperature t amb + 150 (+0,-5) c conditions for power burn-in and operating life tests no. characteristics symbol conditions units 1 forward current i f 3.0 ma 2 ambient temperature t amb + 125 (+0,-5) c electrical measurements at intermediate points and completion of endurance testing mil-std-750 test limits no. characteristics symbol test method conditions min max units 1 forward voltage v f 4011 i f = 1 ma 0.4 v
schottky detector diodes ml 40215-s-120, ml 40215-s-276 the preliminary specifications data sheet contain typical electrical specifications which may change prior to final introductio n. m/a-com ltd. north america: tel. (800) 366-2266 i asia/pacific: tel. +85 2 2111 8088 i europe: tel. +44 (1344) 869-595 fax (800) 618-8883 fax +85 2 2111 8087 fax +44 (1344) 300-020 electrical measurements during and on completion of radiation testing (only if required) mil-std-750 test change no. characteristics symbol test method conditions limits 1 reverse current i r 4016 v r = 1v see graph below. typical performance curves ods 120 outline drawing inches millimeter dim. min. max. min. max. a 0.051 0.055 0.30 1.40 b 0.040 0.050 1.02 1.27 notes: c p = 0.13 pf typical l s = 0.40 nh typical black dot denotes cathode ods 276 outline drawing inches millimeter dim. min. max. min. max. a 0.010 0.020 0.254 0.058 b 0.040 0.050 1.020 1.270 c --- 0.005 --- 0.127 d 0.051 0.055 1.290 1.390 e 0.200 --- 5.060 --- f 0.019 0.021 0.483 0.533 notes: c p = 0.13 pf typical l s = 0.40 nh typical black dot denotes cathode
schottky detector diodes ml 40215-s-120, ml 40215-s-276 the preliminary specifications data sheet contain typical electrical specifications which may change prior to final introductio n. m/a-com ltd. north america: tel. (800) 366-2266 i asia/pacific: tel. +85 2 2111 8088 i europe: tel. +44 (1344) 869-595 fax (800) 618-8883 fax +85 2 2111 8087 fax +44 (1344) 300-020 typical performance curves nominal output voltage at x-band (with forward bias) nominal output voltage at x-band (with zero bias)_ nominal tangential signal sensitivity vs bias current at x-band nominal video impedance vs bias current
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