2008. 12. 16 1/2 semiconductor technical data KDV144EL silicon epitaxial pin type diode revision no : 2 for antenna switches in mobile applications. features low capacitance : c t =0.30[pf] (max.) low series resistance : r s =1.3[ ] (max.) small package . maximum rating (ta=25 ) 1. anode 2. cathcde elp-2 b f f a i j dim millimeters a b c c d d e 2 1 2 1 e h h typ 0.36 typ 0.1 max 0.3 g j i g g 0.6 0.05 + _ 0.3 0.05 + _ 0.2 0.05 + _ 0.25 0.05 + _ 0.025 0.02 + _ 0.18 0.05 + _ 0.28 0.05 + _ electrical characteristics (ta=25 ) characteristic symbol rating unit reverse voltage v r 30 v forward current i f 100 ma junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 0.1 a forward voltage v f i f =10ma - - 1.0 v total capacitance c t v r =1v, f=1mhz - - 0.30 pf series resistance r s i f =10ma, f=100mhz - - 1.3 esd-capability * - c=200pf, r=0 , both forward and reverse direction 1 pulse 100 - - * failure cirterion : i r >100na at v r =30v.
2008. 12. 16 2/2 KDV144EL revision no : 2 reverse current i r (a) reverse voltage v r (v) i r - v r i f - v f forward voltage v f (v) forward current i f (a) 0 0.2 0.6 0.4 0.8 1.2 1.0 0 024 8 610 1 10 100 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 -11 10 -10 10 -09 10 0 02 6 10 48 total capacitance c t (pf) 0 c t - v r 6 24 810 0.1 1.0 forward current i f (ma) series resistance r s ( ? ) r s - i f reverse voltage v r (v) f=1mhz ta =25 c f=100mhz ta =25 c ta =25 c ta =25 c
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