vishay siliconix si4916dy document number: 74331 s09-0540-rev. b, 06-apr-09 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet with schottky diode features ? halogen-free according to iec 61249-2-21 available ? little foot ? plus integrated schottky ? 100 % r g tested applications ? dc/dc converters - notebook product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) channel-1 30 0.018 at v gs = 10 v 10 6.6 0.023 at v gs = 4.5 v 8.5 channel-2 0.018 at v gs = 10 v 10.5 8.9 0.022 at v gs = 4.5 v 9.3 schottky product summary v ds (v) v sd (v) diode forward voltage i f (a) 30 0.50 v at 1.0 a 2.0 d 1 g 1 d 1 s 1 /d 2 g 2 s 1 /d 2 s 2 s 1 /d 2 so -8 5 6 7 8 t op v i e w 2 3 4 1 ordering information: si4916dy-t1-e3 (lead (pb)-free) SI4916DY-T1-GE3 (lead (pb)-free and halogen-free) d 1 g 2 s 2 n-channel 2 mosfet schottky diod e g 1 n-channel 1 mosfet s 1 /d 2 notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol channel-1 channel-2 unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a, b t c = 25 c i d 10 10.5 a t c = 70 c 88.3 t a = 25 c 7.5 a, b, c 7.8 a, b, c t a = 70 c 6 a ,b, c 6.3 a, b, c pulsed drain current (10 s pulse width) i dm 40 40 continuous source-drain diode current t c = 25 c i s 33.2 t a = 25 c 1.7 a, b, c 1.8 a, b, c pulsed source-drain current i sm 40 40 single-pulse avalanche current l = 0.1 mh i as 15 single-pulse avalanche energy e as 11.2 mj maximum power dissipation a, b t c = 25 c p d 3.3 3.5 w t c = 70 c 2.1 2.2 t a = 25 c 1.9 a, b, c 2.0 a, b, c t a = 70 c 1.2 a, b, c 1.3 a, b, c operating junction and storage temperature range t j , t stg - 55 to 150 c
www.vishay.com 2 document number: 74331 s09-0540-rev. b, 06-apr-09 vishay siliconix si4916dy notes: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady state conditions is 112 c/w for channel 1 and 107 c/w for channel 2. thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient a t 10 s r thja 54 65 47 60 c/w maximum junction-to-foot (drain) steady state r thjf 32 38 30 35 mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 30 v ch-2 30 v ds temperature coefficient v ds /t j i d = 250 a ch-1 24 mv/c ch-2 25 v gs(th) temperature coefficient v gs(th) /t j ch-1 - 6 v ch-2 - 6 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1.5 3.0 ch-2 1.5 2.7 gate-body leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na ch-2 100 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v ch-1 1 a ch-2 100 v ds = 30 v, v gs = 0 v, t j = 85 c ch-1 15 ch-2 2000 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v ch-1 20 a ch-2 20 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 10 a ch-1 0.0145 0.018 v gs = 10 v, i d = 10.5 a ch-2 0.015 0.018 v gs = 4.5 v, i d = 8.5 a ch-1 0.019 0.023 v gs = 4.5 v, i d = 9.3 a ch-2 0.018 0.022 forward transconductance b g fs v ds = 15 v, i d = 10 a ch-1 30 s v ds = 15 v, i d = 10.5 a ch-2 35 diode forward voltage b v sd i s = 1.7 a, v gs = 0 v ch-1 0.75 1.1 v i s = 1 a, v gs = 0 v ch-2 0.47 0.5 dynamic a total gate charge q g channel-1 v ds = 15 v, v gs = 4.5 v, i d = 10 a channel-2 v ds = 15 v, v gs = 4.5 v, i d = - 10.5 a ch-1 6.6 10 nc ch-2 8.9 14 gate-source charge q gs ch-1 2.9 ch-2 3.4 gate-drain charge q gd ch-1 2.3 ch-2 2.4 gate resistance r g ch-1 0.5 1.9 2.9 ch-2 0.5 2.3 3.5
document number: 74331 s09-0540-rev. b, 06-apr-09 www.vishay.com 3 vishay siliconix si4916dy notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. a max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 channel-2 v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 ch-1 8 15 ns ch-2 9 15 rise time t r ch-1 11 18 ch-2 13 20 turn-off delay time t d(off) ch-1 21 32 ch-2 27 40 fall time t f ch-1 6 10 ch-2 9 15 source-drain reverse recovery time t rr i f = 1.3 a, di/dt = 100 a/s ch-1 28 40 i f = 2.2 a, di/dt = 100 a/s ch-2 24 35 body diode reverse recovery charge q rr i f = 1.3 a, di/dt = 100 a/s ch-1 17 nc i f = 2.2 a, di/dt = 100 a/s ch-2 12 reverse recovery fall time t a i f = 1.3 a, di/dt = 100 a/s ch-1 12 ns i f = 2.2 a, di/dt = 100 a/s ch-2 11 reverse recovery rise time t b i f = 1.3 a, di/dt = 100 a/s ch-1 16 i f = 2.2 a, di/dt = 100 a/s ch-2 13 schottky specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit forward voltage drop v f i f = 1.0 a 0.47 0.50 v i f = 1.0 a, t j = 125 c 0.36 0.42 maximum reverse leakage current i rm v r = 30 v 0.004 0.100 ma v r = 30 v, t j = 100 c 0.7 10 v r = - 30 v, t j = 125 c 3.0 20 junction capacitance c t v r = 10 v 50 pf
www.vishay.com 4 document number: 74331 s09-0540-rev. b, 06-apr-09 vishay siliconix si4916dy channel-1 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 35 40 0.00 0.30 0.60 0.90 1.20 1.50 v gs = 10 thru 5 v v ds ? drain-to-source voltage (v) ? drain current (a) i d 3 v 4 v 0.010 0.013 0.016 0.019 0.022 0.025 0 5 10 15 20 25 30 35 40 ? on-resistance ( ) r ds(on) i d ? drain current (a) v gs = 4.5 v v gs = 10 v 0 1 2 3 4 5 6 0123456789 i d = 7.5 a ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs v ds = 15 v v ds = 10 v transfer characteristics capacitance on-resistance vs. junction temperature 0 5 10 15 20 25 30 35 40 012345 t c = 125 c - 55 c 25 c v gs ? gate-to-source voltage (v) ? drain current (a) i d 0 150 300 450 600 750 900 1050 0 6 12 18 24 30 v ds ? drain-to-source voltage (v) c rss c oss c iss c ? capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v and 4.5 v i d = 7.5 a t j ? junction temperature (c) r ds(on) ? on-resistance (normalized)
document number: 74331 s09-0540-rev. b, 06-apr-09 www.vishay.com 5 vishay siliconix si4916dy channel-1 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 150 c 40 10 0.1 v sd ? source-to-drain voltage (v) ? source current (a) i s t j = 25 c 1 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j ? temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 0246810 v gs ? gate-to-source voltage (v) i d = 7.5 a ? on-resistance ( ) r ds(on) 0.001 0 1 120 40 60 10 0.1 time (s) 20 80 power (w) 0.01 100 safe operating area 100 1 0.1 1 10 100 0.01 10 t c = 25 c single pulse ? drain current (a) i d 0.1 i dm limited i d(on) limited ds(on) * limited by r bvdss limited 1 ms 10 ms 100 ms 1 s 10 s v ds ? > drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified dc
www.vishay.com 6 document number: 74331 s09-0540-rev. b, 06-apr-09 vishay siliconix si4916dy channel-1 typical characteristics 25 c, unless otherwise noted normalized thermal transient im pedance, junction-to-ambient 2 1 0.1 0.01 10 - 4 10 -3 10 -2 10 -1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 normalized thermal transient impedance, junction-to-foot 10 - 3 10 - 2 110 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 0.05
document number: 74331 s09-0540-rev. b, 06-apr-09 www.vishay.com 7 vishay siliconix si4916dy channel-2 typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 35 40 0.0 0.3 0.6 0.9 1.2 1.5 v gs = 10 thru 4 v 3 v v ds ? drain-to-source voltage (v) ? drain current (a) i d 0.010 0.013 0.016 0.019 0.022 0.025 0 5 10 15 20 25 30 35 40 v gs = 4.5 v v gs = 10 v ? on-resistance ( ) r ds(on) i d ? drain current (a) 0 1 2 3 4 5 6 0.0 2.2 4.4 6.6 8.8 11.0 i d = 7.8 a ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs v ds = 15 v v ds = 10 v transfer characteristics capacitance on-resistance vs. junction temperature 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 c t c = 125 c - 55 c v gs ? gate-to-source voltage (v) ? drain current (a) i d 0 280 560 840 1120 1400 0 5 10 15 20 25 30 c rss c oss c iss v ds ? drain-to-source voltage (v) c ? capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v and 4.5 v i d = 7.8 a t j ? junction temperature (c) r ds(on) ? on-resistance (normalized)
www.vishay.com 8 document number: 74331 s09-0540-rev. b, 06-apr-09 vishay siliconix si4916dy channel-2 typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage reverse current vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 150 c 40 10 0.1 v sd ? source-to-drain voltage (v) ? source current (a) i s t j = 25 c 1 0 25 50 75 100 125 150 ? reverse current (ma) i r t j ? temperature (c) 10 -1 1 10 10 -2 10 -3 10 -4 10 -5 30 v 24 v on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 0246810 v gs ? gate-to-source voltage (v) i d = 7.8 a ? on-resistance ( ) r ds(on) 0.001 0 1 100 40 60 10 0.1 time (s) 20 80 power (w) 0.01 safe operating area 100 1 0.1 1 10 100 0.01 10 t c = 25 c single pulse ? drain current (a) i d 0.1 i dm limited i d(on) limited * ds(on) limited by r bvdss limited 1 ms 10 ms 100 ms 1 s 10 s v ds ? > drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified dc
document number: 74331 s09-0540-rev. b, 06-apr-09 www.vishay.com 9 vishay siliconix si4916dy channel-2 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74331 . normalized thermal transient impedance, junction-to-ambient square wave pulse duration (s) normalized eff ective transient thermal impedance 2 1 0.1 0.01 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 - 3 10 - 2 110 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance
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