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PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz
Description
The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTF081301E Package 30248
PTF081301F Package 31248
EDGE Modulation Spectrum Performance
V DD = 28 V, IDQ = 950 mA, f = 959.8 MHz
-30 60 TCASE = 25C TCASE = 90C 50 40 400 kHz 30 20 10 600 kHz -90 36 38 40 42 44 46 48 50 0
Features
* * *
Drain Efficiency (%)
Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output power = 65 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P-1dB = 150 W - Gain = 17 dB - Efficiency = 55% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power
Modulation Spectrum (dB)
-40 -50 -60 -70 -80
Efficiency
*
* * * *
Output Power (dBm)
RF Characteristics
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 950 mA, P OUT = 65 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gps
Min
-- -- -- -- --
Typ
2.5 -62 -74 18 40
Max
-- -- -- -- --
Unit
% dBc dBc dB %
D
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 11 Rev. 03, 2005-05-02
PTF081301E PTF081301F
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 950 mA, POUT = 130 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
17 40 --
Typ
18 42 -32
Max
-- -- -29
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, IDS = 1 A VDS = 28 V, IDQ = 950 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.1 2.9 --
Max
-- 1.0 -- 4.0 1.0
Unit
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 473 2.70 -40 to +150 0.37
Unit
V V C W W/C C C/W
Ordering Information
Type PTF081301E PTF081301F Package Outline 30248 31248 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTF081301E PTF081301F
Data Sheet
2 of 11
Rev. 03, 2005-05-02
PTF081301E PTF081301F
Typical Performance (measurements taken in production test fixture)
IM3 vs. Output Power at Selected Biases
V DD = 28 V, f1 = 959, f2 = 960 MHz, series show IDQ
-25
Broadband Performance
VDD = 28 V, IDQ = 950 mA, POUT = 51.14 dBm
55 15 Efficiency
-35 850 mA -40 950 mA -45 1050 mA -50 37 39 41 43 45 47 49
35
Return Loss
-5
25 Gain 15 860
-15
880
900
920
940
-25 960
Output Power (dBm ), Avg.
Frequency (MHz)
Power Sweep
V DD = 28 V, f = 960 MHz
19.0 18.5 IDQ = 1425 mA
21
Gain & Efficiency vs. Output Power
V DD = 28 V, IDQ = 950 mA, f = 960 MHz
70 Efficiency 20 19 60 50 Gain 40 30 20 10 0 40 42 44 46 48 50 52 54
Power Gain (dB)
18.0
Gain (dB)
17.5 17.0 16.5 16.0 15.5 15.0 40 42 44 46 48 50 52 54 IDQ = 475 mA IDQ = 950 mA
18 17 16 15 14
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 11
Rev. 03, 2005-05-02
Drain Efficiency (%)
Return Loss (dB)
-30
Gain (dB), Efficiency (%)
45
5
IMD (dBc)
PTF081301E PTF081301F
Typical Performance (cont.)
Output Power (at 1 dB Compression) vs. Supply Voltage
IDQ = 950 mA, f = 960 MHz
53
IS-95 CDMA Performance
VDD = 28 V, IDQ = 950 mA, f = 860 MHz
40 35 TCASE = 25C TCASE = 90C -40
30 25 20 15 10 5 ADJ f C + 1.98 MHz 30 32 34 36 38 40 42 44 46 Efficiency ACP f C - 0.75 MHz
-50 -55 -60 -65 -70 -75 -80
52
51
50 24 26 28 30 32
0
Supply Voltage (V)
Output Power (dBm), Avg.
IS-95 CDMA Performance
V DD = 28 V, IDQ = 950 mA, f = 860 MHz
35
6.0
EDGE EVM Performance
V DD = 28 V, IDQ = 950 mA, f = 959.8 MHz
60 TCASE = 25C TCASE = 90C 50 40 Efficiency 30 20 10 EVM 0.0 0 36 38 40 42 44 46 48 50
Gain (dB), Efficiency (%)
EVM RMS (average %) .
30 25 20 15 10 5 0 30 32 34 36 38 40 42 44 46 Efficiency Gain
5.0 4.0 3.0 2.0 1.0
Average Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03, 2005-05-02
Drain Efficiency (%)
Adjacent Channel Power Ratio (dBc)
-45
Output Power (dBm)
Drain Efficiency (%)
PTF081301E PTF081301F
Typical Performance (cont.)
Three-Carrier CDMA 2000 Performance
VDD = 28 V, IDQ = 950 mA, f = 960 MHz
Adjacent Channel Power Ratio (dBc)
TCASE = 25C TCASE = 90C Efficiency
Intermodulation Distortion vs. Output Power
VDD (as measured in a broadband circuit) = 28 V, IDQ = 950 mA, f1 = 959 MHz, f2 = 960 MHz
3rd Order -30 -40 -50 -60 7th -70 -80 37 39 41 43 45 47 49 5th
45
-20 -30 -40 -50 -60 -70 ALT f C + 5.23 MHz
-20
Drain Efficiency (%)
ALT f C - 3.21 MHz 15
0 30 32 34 36 38 40 42 44 46 48 50
-80
Output Power (dBm), Avg.
IMD (dBc)
30
ACP f C - 1.98 MHz
Output Power (dBm), PEP
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current.
1.03 0.8 A 3.0 A 5.2 A 7.6 A 9.9 A 12.0 A
Normalized Bias Voltage
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20
0
20
40
60
80
100
Case Temperature (C)
Data Sheet
5 of 11
Rev. 03, 2005-05-02
PTF081301E PTF081301F
Broadband Circuit Impedance
TO WA R D GE NE
Z0 = 50
D
- WAV ELENGTH S
G S
980 MHz
0.0
0.1
ARD LOAD S TOW
Frequency
MHz 860 920 940 960 980
Z Source
R 5.35 5.41 5.43 5.42 5.48 jX -3.80 -2.54 -2.16 -1.70 -1.24 R
Z Load
jX 0.99 1.74 1.91 2.15 2.34 1.59 1.56 1.56 1.56 1.50
980 MHz
860 MHz
0 .1
See next page for Reference Circuit
Data Sheet
6 of 11
-
NGTH V ELE -- W A
Rev. 03, 2005-05-02
0.2
860 MHz
0. 1
Z Source
Z Load
Z Load
Z Source
PTF081301E PTF081301F
Reference Circuit
V DD
QQ1 LM7805 C24 0.001F R3 1.2KV C25 0.001F Q1 R4 BCP56 1.3KV
C26 0.001F R5 10KV
R7 3.3KV
L1 R1 10V C2 0.1F 50V R2 5.1KV C3 33pF C7 33pF C8 1F C9 1F +C10 10F 50V C11 0.1F 50V +C12 10F 50V
V DD
R6 22KV
C1 + 10F 35V
l4
DUT
l7 l5
C6 0.5pF
C13 6.8pF
RF_IN
l1
C4 33pF
l2
l3
C5 5.0pF
l6 l8
l9
C14 6.8pF
l10
C15 0.5pF
l11
C17 33pF C16 0.3pF
l12
RF_OUT
L2 C18 33pF C19 1F C20 1F +C21 10F 50V C22 0.1F 50V C23 + 10F 50V
081301_sch
Reference Circuit Schematic for 960 MHz Circuit Assembly Information DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 l12 PTF081301E or PTF081301F 0.76 mm [.030"] thick, r = 4.5 Electrical Characteristics at 960 MHz 1 0.075 , 50.0 0.101 , 50.0 0.055 , 50.0 0.289 , 74.0 0.061 , 7.5 0.036 , 7.9 0.132 , 50.0 0.114 , 7.9 0.047 , 7.9 0.134 , 38.0 0.029 , 50.0 LDMOS Transistor 2 oz. copper Dimensions: L x W (mm) 12.70 x 1.35 17.27 x 1.35 9.40 x 1.35 50.80 x 0.64 9.27 x 16.26 5.46 x 15.24 22.61 x 1.27 17.40 x 15.24 7.24 x 15.24 22.35 x 2.16 4.95 x 1.37 Rogers TMM4 Dimensions: L x W (in.) 0.500 0.680 0.370 2.000 0.365 0.215 0.890 0.685 0.285 0.880 0.195 x x x x x x x x x x x 0.053 0.053 0.053 0.025 0.640 0.600 0.050 0.600 0.600 0.085 0.054
1Electrical characteristics rounded
Data Sheet
7 of 11
Rev. 03, 2005-05-02
PTF081301E PTF081301F
Reference Circuit (cont.)
R7 C1 C2
+ 10 35V
R5
VDD
C25 C26 LM QQ1 C24 Q1 L1 C7 C8 C9
C12
VDD
C11 C10 C13 C16 C17
R6 R4 R1 R2 C3 R3
RF_IN
C4 C5 C6 C14 C18 C19 C20 L2 C15 C21
RF_OUT
R5 R7
C22
C25 C26
LM
C1 C2
+
VDD
C23
081301in_02
081301out_02
081301_assy
Reference Circuit* (not to scale) Component C1 C2, C11, C22 C3, C4, C7, C17, C18 C5 C6, C15 C8, C9, C19, C20 C10, C12, C21, C23 C13, C14 C16 C24, C25, C26 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Description Tantalum capacitor, TE Series, 10 F, 35 V Capacitor, 0.1 F, 50 V, 1206 Capacitor, 33 pF Capacitor, 5.0 pF Capacitor, 0.5 pF Capacitor, 1 F, 50 V Tantalum cap, 10 F, 50 V, TPS Series, SMD Capacitor, 6.8 pF Capacitor, 0.3 pF Capacitor, 0.001 F, 50 V, 0603 Ferrite, 6 mm Transistor Voltage regulator Resistor, 10 ohms, 1/4 W, 1206 Resistor, 5.1 k-ohms, 1/4 W, 1206 Resistor, 1.2 k-ohms, 1/10 W, 0603 Resistor, 1.3 k-ohms, 1/10 W, 0603 Potentiometer, 10 k-ohms, 0.25 W Resistor, 22 k-ohms, 1/10 W, 0603 Resistor, 3.3 k-ohms, 1/4 W, 1206 Suggested Manufacturer Digi-Key Digi-Key ATC ATC ATC Digi-Key Garrett Electronics ATC ATC Digi-Key Ferroxcube Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PC56106-ND, SMD PCC104BCT-ND 100B 330 100B 5R0 100B 0R5 19528-ND TPSE106K050R0400 100B 6R8 100B 0R3 PCC1772CT-ND 53/3/4.6-452 BCP56 LM7805 P10ECT-ND 5.1KECT-ND P1.2KGCT-ND P1.3KGCT-ND 3224W-103ETR-ND P22KGCT-ND P3.3KECT-ND
*Gerber files for this circuit are available on request. Data Sheet 8 of 11 Rev. 03, 2005-05-02
10 35V
R6 R1 R2 C3
R4 R3 Q1
QQ1 C24
081301_assy_dtl
PTF081301E PTF081301F
Package Outline Specifications Package 30248
(45 X 2.72 [.107])
C L
D
9.78 [.385] 19.43 0.51 [.765.020]
2X 4.830.51 [.190.020]
S
LID 9.40 +0.10 -0.15 [.370+.004 ] -.006
C L
G
2X 12.70 [.500] 27.94 [1.100] 1.02 [.040]
2X R1.63 [.064] 4X R1.52 [.060]
19.810.20 [.780.008]
SPH 1.57 [.062] 3.610.38 [.142.015]
0.0381 [.0015]
-A-
34.04 [1.340]
248-cases_30
Diagram Notes: 1. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. 2. All tolerances 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron (min) [100 microinch (min)] D, G - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
9 of 11
Rev. 03, 2005-05-02
PTF081301E PTF081301F
Package Outline Specifications (cont.) Package 31248
( 45 X 2.72 [.107]) 4.830.51 [.190.020]
C L
D
9.78 [.385]
LID 9.40 -0.15 [.370+.004 ] -.006
+0.10
C L
19.430.51 [.765.020]
G
2X 12.70 [.500]
SPH 1.57 [.062]
19.810.20 [.780.008] 1.02 [.040]
0.0381 [.0015] -A-
S
3.610.38 [.142.015] 20.57 [.810]
248-cases_31248
Diagram Notes: 1. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. 2. All tolerances 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron (min) [100 microinch (min)] D, G - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
10 of 11
Rev. 03, 2005-05-02
PTF081301E/F Confidential - Internal Distribution Revision History: 2005-05-02 2004-08-27, Data Sheet Previous Version: Page 1, 2 7, 8 9, 10 Subjects (major changes since last revision) PTF081301F released Circuit descriptions Add and revise case outlines
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2005-05-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 03, 2005-05-02

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