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| BF1012S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC Storage temperature Channel temperature Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 Channel - soldering point1) 4 2 1 VPS05178 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1012S Maximum Ratings Parameter Drain-source voltage Marking NYs 1=S Pin Configuration 2=D 3 = G2 4 = G1 Package SOT143 Unit V mA V mW C Symbol VDS ID IG1/2SM +VG1SE 76 C Ptot Tstg Tch Rthchs Value 16 25 10 3 200 -55 ... 150 150 Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, TS 370 K/W Jun-28-2001 BF1012S Electrical Characteristics at T A = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage I D = 300 A, V G1S = 0 V, V G2S = 0 V Gate 1 - source breakdown voltage +I G1S = 10 mA, VG2S = 0 V, V DS = 0 V Gate 2 source breakdown voltage I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current V G2S = 8 V, VG1S = 0 V, V DS = 0 V Drain current VDS = 12 V, V G1S = 0 , V G2S = 6 V Operating current (selfbiased) VDS = 12 V, V G2S = 6 V Gate 2-source pinch-off voltage VDS = 12 V, I D = 100 A VG2S(p) 0.9 I DSO 8 12 I DSS 500 I G2SS 50 +I G1SS 60 V (BR)G2SS 10 16 +V (BR)G1SS 8 12 V(BR)DS 16 typ. max. Unit V A nA A mA V AC characteristics Forward transconductance (self biased) VDS = 12 V, VG2S = 6 V Gate 1-input capacitance (self biased) VDS = 12 V, VG2S = 6 , f = 1 MHz Output capacitance (self biased) VDS = 12 V, VG2S = 6 , f = 1 MHz Power gain (self biased) VDS = 12 V, VG2S = 6 , f = 800 MHz Noise figure (self biased) VDS = 12 V, VG2S = 6 , f = 800 MHz VDS = 12 V, VG2S = 6 ... 0V, f = 800 MHz Gain control range (self biased) F800 Gps 40 1.4 50 dB Gps 18 22 dB Cdss 0.9 Cg1ss 2.1 2.7 pF gfs 26 30 mS 2 Jun-28-2001 BF1012S Total power dissipation Ptot = f (TS ) Drain current ID = f (VG2S) 300 15 mA mW 12 11 P tot ID 120 C 200 10 9 150 8 7 6 100 5 4 50 3 2 1 0 0 20 40 60 80 100 150 0 0.0 1.0 2.0 3.0 4.0 V 6.0 TS VG2S Insertion power gain Forward transfer admittance | S21 | 2 = f (VG2S ) | Y 21 | = f (V G2S) 10 dB 28 mS 24 -5 22 | S21 | 2 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 0.0 1.0 2.0 3.0 4.0 V |Y21| 20 18 16 14 12 10 8 6 4 2 6.0 0 0.0 1.0 2.0 3.0 4.0 V 6.0 VG2S VG2S 3 Jun-28-2001 BF1012S Gate 1 input capacitance Cg1ss = f (Vg2s) Output capacitance C dss = f (V G2S) f = 200MHz f = 200MHz 3.0 pF 3.0 pF 2.4 2.4 2.2 Cg1ss 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 1.0 2.0 3.0 4.0 V Cdss 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 6.0 0.0 0.0 1.0 2.0 3.0 4.0 V 6.0 VG2S VG2S 4 Jun-28-2001 |
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