View 5KPNN_745969.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

5KP5.0 thru 5KP110A
Vishay Semiconductors
formerly General Semiconductor
TRANSZORB(R) Transient Voltage Supressors
Stand-off Voltage 5.0 to 110V Peak Pulse Power 5000W
Case Style P600
Features
* Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Glass passivated junction * 5000W peak pulse power capability with a 10/1000s waveform, repetition rate (duty cycle): 0.05% * Excellent clamping capability * Low incremental surge resistance * Very fast response time * Devices with V(BR) > 10V ID are typically less than 1.0A * Available in uni-directional polarity only
1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6)
Mechanical Data
Case: Molded plastic body over glass passivated junction Terminals: Solder plated axial leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 265C/10 seconds, 0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension Polarity: The color band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.07 oz., 2.1 g Packaging codes/options: 1/750 ea. per Bulk Box 4/800 ea. per 13" Reel (52mm Tape) 23/300 ea. per Ammo Box (52mm Tape)
0.052 (1.32) 0.048 (1.22) DIA.
1.0 (25.4) MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Characteristics
Parameter Peak pulse power dissipation with a 10/1000s waveform Peak pulse current with a 10/1000s waveform Steady state power dissipation at TL = 75C lead lengths 0.375" (9.5mm)(2) Peak forward surge current, 8.3ms single half sine-wave (3) Instantaneous forward voltage at 100A
(3) (1) (1)
Ratings at 25C unless otherwise noted.
Symbol PPPM IPPM PM(AV) IFSM VF TJ, TSTG
Value Minimum 5000 See next table 8.0 600 3.5 -55 to +175
Unit W A W A V C
Operating junction and storage temperature range
Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25C per Fig. 2. (2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40mm) per Fig. 5. (3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number 88308 23-Jan-03
www.vishay.com 1
5KP5.0 thru 5KP110A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Breakdown Voltage V(BR) (V)(1) MIN MAX 6.40 6.40 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 7.30 7.00 8.15 7.37 8.82 7.98 9.51 8.60 10.2 9.21 10.9 9.83 11.5 10.4 12.2 11.1 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 31.9 38.0 34.4 40.7 36.8 44.9 40.6
TA = 25C unless otherwise noted
Test Current at IT (mA) 50 50 50 50 50 50 50 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Stand-off Voltage VWM (V) 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10.0 10.0 11.0 11.0 12.0 12.0 13.0 13.0 14.0 14.0 15.0 15.0 16.0 16.0 17.0 17.0 18.0 18.0 20.0 20.0 22.0 22.0 24.0 24.0 26.0 26.0 26.0 28.0 28.0 30.0 30.0 33.0 33.0 Maximum Reverse Leakage at VWM ID (A) 2000 2000 5000 5000 2000 2000 1000 1000 250 250 150 150 50 50 20 20 15 15 10 10 5.0 5.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 Maximum Peak Pulse Current IPPM(2) (A) 521 543 439 485 407 446 376 417 350 388 333 368 314 347 296 325 266 294 249 275 227 251 210 233 194 216 186 205 174 192 164 181 155 171 140 154 127 141 116 129 107 119 119 100 110 93.5 103 84.7 93.8 Maximum Clamping Voltage at IPPM VC (V) 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 42.1 50.1 45.4 53.5 48.4 59.0 53.3 Maximum Temperature Coefficient of V(BR) (% / C) 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.078 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.101 0.102 0.102 0.103 0.103 0.104 0.104
Device Type 5KP5.0 5KP5.0A 5KP6.0 5KP6.0A 5KP6.5 5KP6.5A 5KP7.0 5KP7.0A 5KP7.5 5KP7.5A 5KP8.0 5KP8.0A 5KP8.5 5KP8.5A 5KP9.0 5KP9.0A 5KP10 5KP10A 5KP11 5KP11A 5KP12 5KP12A 5KP13 5KP13A 5KP14 5KP14A 5KP15 5KP15A 5KP16 5KP16A 5KP17 5KP17A 5KP18 5KP18A 5KP20 5KP20A 5KP22 5KP22A 5KP24 5KP24A 5KP26 5KP26A 5KP26A 5KP28 5KP28A 5KP30 5KP30A 5KP33 5KP33A www.vishay.com 2
Document Number 88308 23-Jan-03
5KP5.0 thru 5KP110A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Breakdown Voltage V(BR) (V)(1) MIN MAX 40.0 40.0 44.4 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.1 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.6 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.2 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 96.9 78.6 95.1 86.0 102 92.1 106.0 95.8 115 104 122 111 136 123 149 135
TA = 25C unless otherwise noted
Test Current at IT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Stand-off Voltage VWM (V) 36.0 36.0 40.0 40.0 43.0 43.0 45.0 45.0 48.0 48.0 51.0 51.0 54.0 54.0 58.0 58.0 60.0 60.0 64.0 64.0 70.0 70.0 75.0 75.0 78.0 78.0 85.0 85.0 90.0 90.0 100 100 110 110 Maximum Reverse Leakage at VWM ID (A) 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 Maximum Peak Pulse Current IPPM(2) (A) 77.8 86.1 70.0 77.5 65.2 72.0 62.3 68.8 58.5 64.6 54.9 60.7 51.9 57.4 48.5 53.4 46.7 51.7 43.9 48.5 40.0 44.2 37.3 41.3 36.0 39.7 33.1 36.5 31.3 34.2 27.9 30.9 25.5 28.2 Maximum Clamping Voltage at IPPM VC (V) 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 94 107 97 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 Maximum Temperature Coefficient of V(BR) (% / C) 0.104 0.104 0.105 0.105 0.105 0.105 0.106 0.106 0.106 0.106 0.107 0.107 0.107 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.112 0.112
Device Type 5KP36 5KP36A 5KP40 5KP40A 5KP43 5KP43A 5KP45 5KP45A 5KP48 5KP48A 5KP51 5KP51A 5KP54 5KP54A 5KP58 5KP58A 5KP60 5KP60A 5KP64 5KP64A 5KP70 5KP70A 5KP75 5KP75A 5KP78 5KP78A 5KP85 5KP85A 5KP90 5KP90A 5KP100 5KP100A 5KP110 5KP110A
Notes: (1) V(BR) measured after IT applied for 300s IT=square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All items and symbols are consistent with ANSI/IEEE C62.35
Application
The 5KP series of high power transient voltage suppressors were designed to be used on the output of switching power supplies. These devices may be used to replace crowbar circuits. Both the 5 and 10 percent voltage tolerances are referenced to the power supply output voltage level. They are able to withstand high levels of peak current while allowing a circuit breaker to trip or a fuse blow before shorting. This will enable the user to reset the breaker or replace the fuse and continue operation. For this type operation, it is recommended that a sufficient mounting surface be used for dissipating the heat generated by the Transient Voltage Suppressor during the transient or over-voltage condition. Transient Voltage Suppressors are Silicon PN Junction devices designed for absorption of high voltage transients associated with power disturbances, switching and induced lighting effects.
Document Number 88308 23-Jan-03
www.vishay.com 3
5KP5.0 thru 5KP110A
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves
(TA = 25OC unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
PPPM, Peak Pulse Power (kW)
Non-repetitive pulse waveform shown in Fig. 3 TA = 25C Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, %
Fig. 2 - Pulse Power Derating Curve
100
100
75
10
50
1.0
25
0.1 0.1s 1.0s 100s 10s td, Pulse Width 1.0ms 10ms
0 0 25 50 75 100 125 150 175 200 TA - Ambient Temperature (C)
Fig. 3 - Pulse Waveform
150
Fig. 4 - Typical Junction Capacitance
100,000 CJ, Junction Capacitance (pF)
TJ = 25C f = 1 MHz Vsig = 50mVp-p
Measured at Zero Bias Measured at Stand-off Voltage, VWM
IPPM - Peak Pulse Current, % IRSM
tr = 10sec. Peak Value IPPM
100
TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM
10,000
Half Value - IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A.
1,000
td 0
100
0 1.0 2.0 3.0 4.0
1
t - Time (ms)
10 100 VWM - Reverse Stand-off Voltage (V)
200
IFSM, Peak Forward Surge Current (A)
Fig. 5 - Steady State Power Derating Curve
8 PPM(AV), Steady State Power Dissipation (W)
60 HZ Resistive or Inductive Load
Fig. 6 - Maximum Non-repetitive Forward Surge Current
500 450 400 350 300 250 200 1 10 Number of Cycles at 60 HZ 100
8.3ms Single Half Sine-Wave (JEDEC Method)
6
4
0.375" (9.5mm) Lead Length
2
0.8 x 0.8 x 0.040" (20 x 20mm) Copper Heat Sink
0 0
25
50 75 100 125 150 175 200 TL, Lead Temperature (C)
www.vishay.com 4
Document Number 88308 23-Jan-03

▲Up To Search▲

Price & Availability of 5KPNN

	To Download 5KPNN Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .