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GP02-20 thru GP02-40 Vishay Semiconductors formerly General Semiconductor High Voltage Glass Passivated Junction Rectifiers DO-204AL (DO-41) (R) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. ed* tent Pa Features Reverse Voltage 2000 to 4000V Forward Current 0.25A 0.205 (5.2) 0.160 (4.1) * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 Mechanical Data 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Maximum repetitive peak reverse voltage Maximum RMS Voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA = 55C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load at TA = 55C (JEDEC Method) Typical thermal resistance(1) Operating junction and storage temperature range Symbol GP02-20 GP02-25 GP02-30 GP02-35 GP02-40 VRRM VRMS VDC IF(AV) IFSM RJA TJ, TSTG 2000 1400 2000 2500 1750 2500 3000 2100 3000 0.25 15 130 -65 to +175 3500 2450 3500 4000 2800 4000 Unit V V V A A C/W C Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Maximum instantaneous forward voltage at 1.0A Maximum DC reverse currentTA = 25C at rated DC blocking voltageTA = 100C Typical reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Typical junction capacitance at 4.0V, 1MHz VF IR trr CJ 3.0 5.0 50 2.0 3.0 V A s pF Note: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted *JEDEC registered values Document Number 88635 28-Feb-02 www.vishay.com 1 GP02-20 thru GP02-40 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Average Forward Rectified Current (A) 0.25 0.2 60 Hz Resistive or Inductive Load Peak Forward Surge Current (A) 15 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current TJ = TJ 8.3 single half sine-wave (JEDEC method) 10 0.15 0.1 0.05 0.375" (9.5mm lead length) 0 0 25 75 100 125 150 Ambient Temperature (C) 50 175 5.0 0 1 10 Number of Cycles at 60 Hz 100 Fig. 3 - Typical Instantaneous Forward Characteristics 10 Instantaneous Forward Current (A) Instantaneous Reverse Leakage Current (A) 10 Fig. 4 - Typical Reverse Characteristics TJ = 100C 1 1 0.1 TJ = 25C Pulse width = 300 s 1% Duty cycle 0.01 1.0 3.0 2.0 4.0 Instantaneous Forward Voltage (V) 5.0 0.1 TJ = 25C 0.01 0 100 80 20 60 40 Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 6.0 5.0 4.0 3.0 2.0 1.0 0 0.1 TJ = 25C f = 1.0 MHz Vsig = 50mVp-p Junction Capacitance (pF) 10 1 Reverse Voltage (V) 100 www.vishay.com 2 Document Number 88635 28-Feb-02 |
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