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DG441/442
Quad SPST CMOS Analog Switches
Features
D D D D D D D D Low On-Resistance: 50 W Low Leakage: 80 pA Low Power Consumption: 0.2 mW Fast Switching Action--tON: 150 ns Low Charge Injection--Q: -1 pC DG201A/DG202 Upgrades TTL/CMOS-Compatible Logic Single Supply Capability
Benefits
D Less Signal Errors and Distortion D Reduced Power Supply Requirements D Faster Throughput D Improved Reliability D Reduced Pedestal Errors D Simplifies Retrofit D Simple Interfacing
Applications
D D D D D D D D Audio Switching Battery Powered Systems Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments
Description
The DG441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The DG441 has a normally closed function. The DG442 has a normally open function. Combining low on-resistance (50 W, typ.) with high speed (tON 150 ns, typ.), the DG441/442 are ideally suited for upgrading DG201A/202 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high voltage ratings and superior switching performance, the DG441/442 are built on Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off.
Functional Block Diagram and Pin Configuration
1 2 3 4 5 6 7 8 Dual-In-Line and SOIC 16 15 14 13 12 11 10 9
IN1 D1 S1 V- GND S4 D4 IN4
IN2 D2 S2 V+ NC S3 S4 D3 IN3 Key 4 5 6 7 8 9 10 11 12 13 LCC D1 IN1 NC IN2 D2 3 2 1 20 19 18 17 16 15 14 S2 V+ NC NC S3
S1 V- NC GND
DG441
Top View
DG441
Top View
D4 IN4 NC IN3 D3
Truth Table Logic
0 1
DG441
ON OFF
DG442
OFF ON
Logic "0" v 0.8 V Logic "1" w 2.4 V
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70053.
Siliconix S-52880--Rev. F, 28-Apr-97
1
DG441/442
Ordering Information
Temp Range Package
16-Pin Plastic DIP -40 to 85_C 16-Pin Narrow SOIC
Part Number
DG441DJ DG442DJ DG441DY DG442DY DG441AK DG441AK/883 5962-9204101MEA
16-Pin CerDIP -55 to 125_C
DG442AK DG442AK/883 5962-9204102MEA 5962-9204101M2A
LCC-20
5962-9204102M2A
Absolute Maximum Ratings
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . 100 mA Storage Temperature (AK Suffix) . . . . . . . . . . . . . . -65 to 150_C (DJ, DY Suffix) . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 12 mW/_C above 25_C
Schematic Diagram (Typical Channel)
V+
5 V Reg
INX
Level Shift/ Drive
V-
V+ GND D
V-
Figure 1.
2
Siliconix S-52880--Rev. F, 28-Apr-97
DG441/442
Specificationsa for Dual Supplies
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) ID(off) Channel On Leakage Current ID(on) IS = -10 mA, VD = "8.5 V V+ = 13.5 V, V- = -13.5 V Full Room Full Room Full Room Full Room Full 50 "0.01 "0.01 "0.08 -0.5 -20 -0.5 -20 -0.5 -40 -15 15 85 100 0.5 20 0.5 20 0.5 40 -0.5 -5 -0.5 -5 -0.5 -10 -15 15 85 100 0.5 5 0.5 5 0.5 10 nA V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V = 15 V, V- = -15 V VV 15 V+ VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd Mind
Maxd
Unit
Switch Off Leakage C Lk Current
V+ = 16.5, V- = -16.5 V , VD = "15.5 V, VS = #15.5 V 15 5 V 15 5 V+ = 16.5 V, V- = -16.5 V VS = VD = "15.5 V
Digital Control
Input Current VIN Low Input Current VIN High IIL IIH VIN under test = 0.8 V All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V Full Full -0.01 0.01 -500 -500 500 500 -500 -500 500 nA 500
Dynamic Characteristics
Turn-On Time DG441 Turn-Off Time DG442 Charge Injectione Off Isolatione Crosstalke (Channel-to-Channel) Source Off Capacitancee Drain Off Capacitancee tOFF Q OIRR XTALK CS(off) CD(off) CD(on) VANALOG = 0 V tON RL = 1 kW CL = 35 pF kW, F VS = "10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 50 W CL = 5 pF W, f = 1 MHz Room Room Room Room Room Room Room f = 1 MHz Room Room 4 16 pF 150 90 110 -1 60 100 4 dB 250 120 210 250 120 210 pC ns
Channel On Capacitancee
Power Supplies
Positive Supply Current Negative Supply Current Ground Current I+ I- IGND V+ = 16.5 V, V- = -16.5 V VIN = 0 or 5 V Full Room Full Full 15 -0.0001 -15 -1 -5 -100 100 -1 -5 -100 100 mA
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Siliconix S-52880--Rev. F, 28-Apr-97
3
DG441/442
Specificationsa for Single Supply
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS = -10 mA, VD = 3 V, 8 V V+ = 10.8 V Full Room Full 100 0 12 160 200 0 12 160 200 V W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V = 12 V, V- = 0 V VV V+ VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection tON tOFF Q RL = 1 kW, CL = 35 pF , p VS = 8 V, See Figure 2 V S Fi CL = 1 nF Vgen = 6 V, Rgen = 0 W Room Room Room 300 60 2 450 200 450 200 ns pC
Power Supplies
Positive Supply Current Negative Supply Current Ground Current I+ I- IGND V+ = 16.5 V, V- = -16.5 V VIN = 0 or 5 V Full Room Full Full 15 -0.0001 -15 -1 -100 -100 100 -1 -100 -100 100 mA
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Typical Characteristics
rDS(on) vs. VD and Power Supply Voltage
100 rDS(on) - Drain-Source On-Resistance ( W ) rDS(on) - Drain-Source On-Resistance ( W ) "5 V 80 70 60 125_C 50 40 30 20 10 0 -15 0_C -40_C -55_C 85_C 25_C V+ = 15 V V- = -15 V
rDS(on) vs. VD and Temperature
80
60
40
"8 V "10 V "12 V "15 V "20 V
20
0 -20
-15
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
VD - Drain Voltage (V)
VD - Drain Voltage (V)
4
Siliconix S-52880--Rev. F, 28-Apr-97
DG441/442
Typical Characteristics (Cont'd)
rDS(on) vs. VD and Unipolar Power Supply Voltage
300 rDS(on) - Drain-Source On-Resistance ( W ) rDS(on) - Drain-Source On-Resistance (W ) V- = 0 V 250 V+ = 5 V 200 150 8V 100 50 0 0 4 8 12 16 20 VD - Drain Voltage (V) 10 V 12 V 15 V 20 V
rDS(on) vs. VD and Temperature (Single 12-V Supply)
140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 VD - Drain Voltage (V) 0_C -40_C -55_C V+ = 12 V V- = 0 V
125_C 85_C 25_C
Crosstalk and Off Isolation vs. Frequency
140 120 100 20 Q (pC) (-dB) 80 60 Off Isolation 40 20 0 100 1k 10 k 100 k 1M 10 M f - Frequency (Hz) V+ = 15 V V- = -15 V Ref. 10 dBm 10 0 -10 -20 -30 -10 50 40 Crosstalk 30
Charge Injection vs. Source Voltage
CL = 1 nF
V+ = 15 V V- = -15 V
V+ = 12 V V- = 0 V
-5
0
5
10
VS - Source Voltage (V)
Switching Threshold vs. Supply Voltage
2.4 20
Source/Drain Leakage Currents
IS(off) , ID(off) 0
1.6 I S , I D (pA) VIN (V)
-20 -40 ID(on) -60 -80 V+ = 15 V V- = -15 V For I(off), VD = -VS -10 -5 0 5 10 15
0.8
0 0 5 10 15 20 V+, V- Positive and Negative Supplies (V)
-100 -15
VD or VS - Drain or Source Voltage (V)
Siliconix S-52880--Rev. F, 28-Apr-97
5
DG441/442
Typical Characteristics (Cont'd)
Source/Drain Leakage Currents (Single 12-V Supply)
10 IS(off) , ID(off) 0 50 44 40 V+ 5 V - CMOS Compatible S IN D
Operating Voltage
V+ (V)
-10 IS(on) + ID(on) -20 V+ = 12 V V- = 0 V For ID, VS = 0 For IS, VD = 0 0 2 4 6 8 10 12
-30
-40 VD or VS - Drain or Source Voltage (V)
160 140
Switching Time vs. Power Supply Voltage
500
tON 120 t (ns) t (ns) 100 80 tOFF 60 40 20 10
400 tON 300
200
100 tOFF 12 14 16 18 20 22 0 8 10 12 14 16 18 20 22 VS - Source Voltage (V)
Supply Voltage (V)
Test Circuits
+15 V Logic Input V+ "10 V S IN 3V GND V- Switch Output Note: 0V tON Logic input waveform is inverted for DG442. D RL 1 kW 0V VO CL 35 pF Switch Input VS VO 80% 80% tOFF 3V 50% 50% tr <20 ns tf <20 ns
-15 V CL (includes fixture and stray capacitance)
Figure 2. Switching Time
6
CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC
30 20 TTL Compatible VIN = 0.8 V, 2.4 V 10 3 0 0 -10 -20 V- = 0 V
I S , I D (pA)
V-
CMOS Compatible -30 -40 -50
V- - Negative Supply (V)
Switching Time vs. Power Supply Voltage
Siliconix S-52880--Rev. F, 28-Apr-97
DG441/442
Test Circuits (Cont'd)
+15 V DVO VO D CL 1 nF V- OFF ON Q = DVO x CL OFF VO INX OFF (DG441) ON OFF
Rg
V+ S IN
Vg 3V
GND
-15 V
INX (DG442)
Figure 3. Charge Injection
C = 1 mF tantalum in parallel with 0.01 mF ceramic C +15 V C V+ VS Rg = 50 W 0V, 2.4 V NC 0V, 2.4 V S2 IN2 GND V- C -15 V -15 V Off Isolation = 20 log XTALK Isolation = 20 log C = RF bypass VS VO VS VO D2 VO 0V, 2.4 V RL S1 IN1 D1
V+
+15 V
50 W
VS Rg = 50 W
S
D
VO
IN GND V- C
RL
Figure 4. Crosstalk
+15 V C V+ S Meter IN 0 V, 2.4 V D GND V- C
Figure 5. Off Isolation
HP4192A Impedance Analyzer or Equivalent
-15 V
Figure 6. Source/Drain Capacitances
Siliconix S-52880--Rev. F, 28-Apr-97
7
DG441/442
Applications
+15 V +24 V
RL
DG442
+15 V IN
V+ 150 W
I = 3A VN0300L, M +15 V VIN 10 kW +15 V + - S
1/4 DG442 D CH + -
VOUT
GND 0 = Load Off 1 = Load On
V- IN -15 V H = Sample L = Hold
Figure 7. Power MOSFET Driver
Figure 8. Open Loop Sample-and-Hold
VIN
+ - +15 V V+
VOUT Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. R1 90 kW R2 5 kW R3 4 kW R4 1 kW With SW4 Closed VOUT VIN = R1 + R2 + R3 + R4 R4 = 100
GAIN1 AV = 1 GAIN2 AV = 10 GAIN3 AV = 20 GAIN4 AV = 100
DG441 or DG442
V- GND
-15 V
Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier
8
Siliconix S-52880--Rev. F, 28-Apr-97

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