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TGF2960-SD
0.5 Watt DC-5 GHz Packaged HFET
Key Features
*
Frequency Range: DC-5 GHz Nominal 900 MHz Application Board Performance: * TOI: 40 dBm * 28 dBm Psat, 27 dBm P1dB * Gain: 19 dB * Input Return Loss: -10 dB * Output Return Loss: -5 dB * Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V (Typical) * Package Dimensions: 4.5 x 4 x 1.5 mm
900 MHz Application Board Performance
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
Primary Applications
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 1.2
20
Gain (dB)
15
Gain IRL ORL
IRL and ORL (dB)
* * * * *
Cellular Base Stations WiMAX Wireless Infrastructure IF & LO Buffer Applications RFID
Product Description
The TGF2960-SD is a high performance 1/2-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package. The device's ideal operating point is at a drain bias of 8 V and 100 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 19 dB of gain, 28 dBm of saturated output power, and 40 dBm of output IP3. Evaluation boards at 900 MHz, 1900 MHz and 2100 MHz available on request.
10
5 0.6 0.7 0.8 0.9 1.0 1.1 Frequency (GHz)
29
Psat (dBm)
28
27
RoHS and Lead-Free compliant.
26 0.86 0.88 0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
1
TGF2960-SD
Table I Absolute Maximum Ratings 1/
Symbol
Vd-Vg Vd Vg Id Ig Pin
Parameter
Drain to Gate Voltage Drain Voltage Gate Voltage Range Drain Current Gate Current Range Input Continuous Wave Power
Value
17 V 9V -5 to 0 V 390 mA -2.4 to 17.8 mA 26 dBm
Notes
2/
2/
2/
1/
These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV.
2/
Table II Recommended Operating Conditions
Symbol
Vd Idq Id Vg Drain Voltage Drain Current Drain Current at Psat Gate Voltage
Parameter 1/
Typical Value
8V 100 mA 130 mA -1.0 V
1/
See assembly diagram for bias instructions.
2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Table III Electrical Performance
Test conditions unless otherwise specified: fin = 900 MHz, 25C; Vd = 8V, Idq = 100 mA, Vg = -1.0 Typical; See test circuit for 900 MHz operation SYMBOL
Gain P1dB OTOI
PARAMETER
Small Signal Gain Output Power @ 1dB Compression 3rd Order Output Intercept Point 1/
MIn
18 25.5 37
Nom
19 27 40
UNIT
dB dBm dBm
1/ 900 and 910 MHz, 16 dBm output power per tone
3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Table IIIa RF Characterization Table
Bias: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V, typical
SYMBOL
Gain
PARAMETER
Small Signal Gain
TEST CONDITIONS
900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz 900 MHz 1900 MHz 2100 MHz
NOMINAL
19 16 15 -10 -10 -10 -5 -6 -6 28 28 28 27 27 27 40 39 39 3.7 4.3 4.3
UNITS
dB
NOTES
1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 4/ 5/ 1/ 2/ 3/
IRL
Input Return Loss
dB
ORL
Output Return Loss
dB
Psat
Saturated Output Power Output Power @ 1dB Compression Output TOI
dBm
P1dB
dBm
TOI
dBm
NF
Noise Figure
dB
1/ 2/ 3/ 4/ 5/
Using 900 MHz Application Board Using 1900 MHz Application Board tuned for maximum output power Using 2100 MHz Application Board tuned for maximum output power Using 1900 MHz Application Board tuned for maximum TOI (reduces output power reduced by 1 dB) Using 2100 MHz Application Board tuned for maximum TOI (reduces output power reduced by 1 dB)
4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Table IV Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Test Conditions
Tbaseplate = 70C
Value
Pd = 1.37 W Tchannel = 175C Tm = 8.77E+06 Hrs jc = 77 (C/W) Tchannel = 146.5C Tm = 2.06E+08 Hrs jc = 77 (C/W) Tchannel = 126C Tm = 2.48E+09 Hrs
Thermal Resistance, jc
Vd = 8 V Id = 100 mA Pd = 0.8 W Tbaseplate = 85C Vd = 8 V Id =130 mA Pout = 27 dBm Pd = 0.54 W Tbaseplate = 85C
Thermal Resistance, jc at Psat
Mounting Temperature Storage Temperature
See `Typical Solder Reflow Profiles' Table -65 to 150C
5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Gmax, Max Stable Gain, K factor
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
35 30 Gmax and MSG - dB 25 20 15 10 5 0 0 1 2 3 4 5 6 7 Frequency (GHz)
Gmax Max Stable Gain K factor
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 K factor
6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Measured Data 900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
25
Gain (dB)
20
15
10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Frequency (GHz)
0 -5 IRL and ORL (dB) -10 -15 -20
IRL ORL
-25 -30 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Frequency (GHz)
7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Measured Data 900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
28
P1dB (dBm)
27
26
-40 deg C 25 deg C 85 deg C
25
0.86
0.88
0.90
0.92
0.94
0.96
Frequency (GHz)
29
Psat (dBm)
28
27
-40 deg C 25 deg C 85 deg C
26 0.86 0.88 0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
0.98
TGF2960-SD
Measured Data 900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
42
OIP3 (dBm)
41
40
39 0.82 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98 1.00 1.02
Frequency (GHz)
9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
20
Gain (dB)
15
10
5 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 Frequency (GHz)
0 -5 IRL and ORL (dB) -10 -15 -20
IRL ORL
-25 -30 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 Frequency (GHz)
10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
28 27 P1dB (dBm) 26 25
-40 deg C
24 23 1.88 1.90 1.92 1.94
25 deg C 85 deg C
1.96
1.98
2.00
2.02 2.02
Frequency (GHz)
29
Psat (dBm)
28
27
-40 deg C 25 deg C 85 deg C
26 1.88 1.90 1.92 1.94 1.96 1.98 2.00 2.04
Frequency (GHz)
11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
2.04
TGF2960-SD
Measured Data 1900 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
41
OIP3 (dBm)
40
(Tuned for Max IP3, P1dB reduced by 1 dB)
39
38 1.92 1.94 1.96 1.98 2.00 2.00
Frequency (GHz)
40
OIP3 (dBm)
39
38
(Tuned for Max Pout)
37 1.92 1.94 1.96 1.98
Frequency (GHz)
12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Measured Data 2100 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
20
Gain (dB)
15
10
5 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 Frequency (GHz)
0 -5 IRL and ORL (dB) -10 -15 -20
IRL ORL
-25 -30 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 Frequency (GHz)
13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Measured Data 2100 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
29 28 P1dB (dBm) 27 26 25 24 23 2.06 2.08 2.10 2.12 2.14 2.16 2.18 2.20 2.20 2.22 2.22
-40 deg C 25 deg C 85 deg C
Frequency (GHz)
30 29 Psat (dBm) 28 27 26 25 24 2.06 2.08 2.10 2.12 2.14 2.16 2.18
-40 deg C 25 deg C 85 deg C
Frequency (GHz)
14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Measured Data 2100 MHz Application Board
Bias conditions: Vd = 8 V, Idq = 100 mA, Vg = -1.0 V Typical
40
OIP3 (dBm)
39
38
(Tuned for Max IP3, P1dB reduced by 1 dB)
37 2.07 2.09 2.11 2.13 2.15 2.17 2.19 2.19 2.21 2.21
Frequency (GHz)
40
OIP3 (dBm)
39
38
(Tuned for Max Pout)
37 2.07 2.09 2.11 2.13 2.15 2.17
Frequency (GHz)
15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Electrical Schematic
2
1
2
3
Pin 1 2 3
Signal RF In (Gate) Gnd (Source) RF Out (Drain)
Bias Procedures
Bias-up Procedure Vg set to -2.5 V Vd set to +8 V Adjust Vg more positive until Idq is 100 mA. This will be ~ Vg = -1.0 V Apply RF signal to input Bias-down Procedure Turn off RF signal at input Reduce Vg to -2.5V. Ensure Id ~ 0 mA Turn Vd to 0 V Turn Vg to 0 V
16 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Mechanical Drawing
B K 2 D 1 J I F E 2 3 J A C H G 3 2 1
Dim A B C D E F G H I J K
Millimeters Min 1.40 4.40 2.29 3.94 Max 1.60 4.60 2.60 4.25
3.00 Center-Center 1.50 Center-Center 0.35 0.89 0.44 0.36 1.50 0.44 1.20 0.56 0.48 1.83
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
17 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Evaluation Board
L2 R1 Gnd Vg
C6 C8 C10
Q1 Vd
C5 C7 C9
L3 C2 RF OUT
RF IN
C4 L4 (900 MHz Only) C3 L1 C1 R2 D / (900 MHz) D / (1900 & 2100 MHz)
Evaluation Board Schematic
Vg C6 C8 C10
Vd C5 C7 C9 R1 L3 Q1 L1 C1 R2 L4
(900 MHz Only)
C4 C2
RF OUT Z0 = 50
RF IN Z0 = 50
C3
L2
D/
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
18 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Evaluation Board Bill of Materials
Ref Des L1 C1 C2 D D D L2, L3 L4 C3,C4 C5, C6 C7, C8 C9, C10 R1 R2 Q1 (PCB)
Value for Freq (MHz) 900 4.7 nH 22 pF 0.7 pF 18.8 mm 18.8 mm 36o@0.9 GHz 18.8 mm 36o@0.9 GHz 1900 1.2 nH 1.2 pF 0.6 pF 14.2 mm 14.2 mm 58o@1.9 GHz 17.2 mm 70o@1.9 GHz 50 nH 1.2 nH -150 pF 0.1 F 0.01 F 1000 pF 50 Ohms 11 Ohms 3 Ohms --5.1 Ohms -2100 1.5 nH 1.2 pF 0.6 pF 5.8 mm 5.8 mm 26o@2.1 GHz 9.6 mm 39o@2.1 GHz
Description 0603 ACCU-L AVX Inductor 0603 ACCU-P AVX Capacitor 0603 ACCU-P AVX Capacitor Physical Location for C2 Physical Location for C2 for maximum power 50 Ohm Transmission Line Length D for maximum power Physical Location for C2 for maximum TOI 50 Ohm Transmission Line Length D for maximum TOI 0805 Inductor 0603 ACCU-L AVX Inductor 0603 Capacitor 0603 Capacitor 0603 Capacitor 0603 Capacitor 0805 1/8 Watt Resistor 0805 1/8 Watt Resistor TriQuint TGF2960-SD Packaged FET 28 mil thick GETEK
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
19 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Recommended Assembly Diagram
2.6 mm O CLEARANCE HOLE FOR 2-56 SOCKET HEAD CAP SCREW (2/) 7.6 X 7.6 mm COPPER AREA (3/) ARRAY OF VIAS (1/) 4.6 mm O SOLDERMASK KEEPOUT FOR 2-56 LOCKWASHER (4/) SOT-89 PACKAGE OUTLINE
1
2
3
Assembly Notes
1/ The lowest possible thermal and electrical resistance for Pin 2 is critical for optimal performance. The array of vias under Pin 2 should be as small and as dense as the PC board fabrication permits. 0.30 mm diameter vias on 0.60 mm center to center spacing is recommended. 2/ Mounting screws in the vicinity of the package improve heat transfer to the chassis or to a heat spreader located on the backside of the PC board. Shown are clearance holes and solder mask keepout zone for a 256 socket head cap screw. Use of a split lockwasher and proper torque on the screw will prevent compression damage to the PC board. 3/ Use of 1 oz copper (min) in the PC board construction is recommended. 4/ For lowest thermal resistance, solder mask must be removed where the copper traces on the PC board contact the heat spreader. In this example, this would be a) front and backsides of the PC board around the 2-56 screw and b) front of the PC board around package pin 2.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
20 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A
TGF2960-SD
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile
Ramp-up Rate Activation Time and Temperature Time above Melting Point Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate
SnPb
3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 240 C 10 - 20 sec 4 - 6 C/sec
Pb Free
3 C/sec 60 - 180 sec @ 150 - 200 C 60 - 150 sec 260 C 10 - 20 sec 4 - 6 C/sec
Ordering Information
Part TGF2960-SD, TAPE AND REEL Package Style SOT-89, TAPE AND REEL
21 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2010 (c) Rev A

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