![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
VISHAY BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features * * * * * Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications General purpose Mechanical Data Case: Sintered glass case, SOD 57 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 370 mg, (max. 500 mg) 949539 Parts Table Part BY527 Type differentiation VR = 800 V; IFAV = 2 A SOD57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) Junction and storage temperature range = 180 Tj = 175 C, tp = 20 s, half sinus wave I(BR)R = 1 A, Tj = 175 C i2 * t-rating IR = 100 A see electrical characteristics tp = 10 ms, half sinewave Test condition Sub type Symbol VRSM VR IFSM IFRM IFAV PR ER i2*t Value 1250 800 50 12 2 1000 20 8 Unit V V A A A W mJ A2*s C Tj = Tstg - 55 to + 175 Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Sub type Symbol RthJA RthJA Value 45 100 Unit K/W K/W Document Number 86007 Rev. 5, 07-Jan-03 www.vishay.com 1 BY527 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Reverse recovery charge IF = 1 A IF = 10 A VR = 800 V VR = 800 V, Tj = 100 C IR = 100 A, tp/T = 0.01, tp = 0.3 ms VR = 4 V, f = 1 MHz IF = 0.5 A, IR = 1 A, iR = 0.25 A IF = 1 A, di/dt = 5 A/s, VR = 50 V IF = 1 A, di/dt = 5 A/s Test condition Sub type Symbol VF VF IR IR V(BR) CD trr trr Qrr 1250 16 0.1 5 Min Typ. 0.9 VISHAY Max 1.0 1.65 1 10 Unit V V A A V pF 4 4 3 s s C Typical Characteristics (Tamb = 25 C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 l 100 80 60 40 20 0 0 5 10 15 20 25 30 16423 l I FAV - Average Forward Current ( A ) 2.5 2.0 1.5 1.0 0.5 RthJA=100K/W PCB: d=25mm 0.0 0 20 40 60 80 100 120 140 160 180 VR=VRRM half sinewave RthJA=45K/W l=10mm TL=constant 94 9101 l - Lead Length ( mm ) Tamb - Ambient Temperature ( C ) Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 3. Max. Average Forward Current vs. Ambient Temperature 100.000 IR - Reverse Current ( mA ) 1000 VR = VRRM I F - Forward Current ( A) 10.000 Tj=175C 1.000 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Tj=25C 100 10 1 25 16424 50 75 100 125 150 175 16422 VF - Forward Voltage ( V ) Tj - Junction Temperature ( C ) Figure 2. Forward Current vs. Forward Voltage Figure 4. Reverse Current vs. Junction Temperature www.vishay.com 2 Document Number 86007 Rev. 5, 07-Jan-03 VISHAY BY527 Vishay Semiconductors 300 PR - Reverse Power Dissipation ( mW ) 40 VR = VRRM CD - Diode Capacitance ( pF ) 250 200 150 100 50 0 25 35 30 25 20 15 10 5 0 f=1MHz PR-Limit @100%VR PR-Limit @80%VR 16425 50 75 100 125 150 Tj - Junction Temperature ( C ) 175 16426 0.1 1.0 10.0 VR - Reverse Voltage ( V ) 100.0 Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature Zthp - Thermal Resistance for Pulse Cond. (K/W) Figure 6. Diode Capacitance vs. Reverse Voltage 1000 VRRM=1000V, RthJA=100K/W 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 1 10-5 tp/T=0.01 10-4 10-3 10-2 10-1 100 101 Tamb=60C Tamb=70C Tamb=100C 100 101 IFRM - Repetitive Peak Forward Current ( A ) 102 Tamb=25C Tamb=45C 94 9178 tp - Pulse Length ( s ) Figure 7. Thermal Response Package Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification technical drawings according to DIN specifications 94 9538 0.82 max. 26 min. 4.2 max. 26 min. Document Number 86007 Rev. 5, 07-Jan-03 www.vishay.com 3 BY527 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86007 Rev. 5, 07-Jan-03 |
Price & Availability of BY527
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |