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APTGF150X60E3
3 Phase bridge NPT IGBT Power Module
VCES = 600V IC = 150A @ Tc = 80C
Application * AC Motor control
Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration
* * *
19 17 15
Benefits * Outstanding performance at high frequency operation Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile
20
14
21
13
12
34
56
78
9 10
11 12
* * * * * * *
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
TC = 25C Tj = 125C
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-3
APTGF150X60E3 - Rev 0
400A@480V
July, 2003
TC = 25C TC = 80C TC = 25C
Max ratings 600 225 150 450 20 700
Unit V A
APTGF150X60E3
Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current
All ratings @ Tj = 25C unless otherwise specified
Test Conditions VGE = 0V, IC = 500A Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 200A Tj = 125C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Min 600 Typ 1 1 2.0 2.2 Max 500 2.5 6.5 400 Unit V A mA V V nA
1.7 4.5
Dynamic Characteristics
Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A RG = 1.5 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 200A RG = 1.5
Min
Typ 9000 800 163 43 253 33 180 49 285 41 6.3
Max
Unit pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge
Test Conditions IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =800A/s IF = 200A VR = 300V di/dt =800A/s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C
Min
Typ 1.25 1.2 4.1 13 20
Max 1.6
Unit V mJ C
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink Package Weight IGBT Diode
Min
Typ
Max 0.18 0.32 150 125 125 4.5 300
Unit
C/W
2500 -40 -40 -40 3
V C N.m g
M5
APT website - http://www.advancedpower.com
2-3
APTGF150X60E3 - Rev 0
July, 2003
APTGF150X60E3
Package outline
PIN 1 PIN 21
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
3-3
APTGF150X60E3 - Rev 0
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
July, 2003

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