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Datasheet File OCR Text: |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A42 TRANSISTORNPN (c) TO 92 FEATURES Power dissipation PCM : 0.625 W Tamb=25ae(c) Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 300 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(c) 1 DC current gain hFE(c) 2 HFE(c) 3 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) 1.EMITTER 2.BASE 3.COLLECTOR 123 unless Test otherwise MIN specified(c) TYP MAX UNIT V V V 0.25 0.1 |I A |I A conditions Ic= 100|I AIE=0 Ic= IE= 1 mAIB=0 100|I AIC=0 IE=0 V IC=0 300 300 5 VCB= 200 V VEB= 5 VCE= 10 V, IC= 1 mA VCE= 10V, IC = 10 mA VCE= 10 V, IC=30 mA IC= 20 mA, IB= 2 mA IC= 20m A, VCE=20 V, IB= 2 mA I = 10 mA C 60 80 75 0.2 0.9 50 V V MHz 250 fT f =30MHz CLASSIFICATION OF h FE(2) Rank Range A 80-100 B1 100-150 B2 150-200 C 200-250 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b |O e e1 Symbol A A1 b c D D1 E e e1 L O Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 C |
Price & Availability of 2SA42
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