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Freescale Semiconductor Technical Data
Document Number: MRF8P29300H Rev. 0, 2/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. * Typical Pulsed Performance: VDD = 30 Volts, IDQ = 100 mA
Signal Type Pulsed (100 sec, 10% Duty Cycle) Pout (W) 320 Peak f (MHz) 2900 Gps (dB) 13.3 D (%) 50.5 IRL (dB) --17
MRF8P29300HR6 MRF8P29300HSR6
2700-2900 MHz, 320 W, 30 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 sec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout) Features * Characterized with Series Equivalent Large--Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Designed for Push--Pull Operation * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15.
CASE 375D-05, STYLE 1 NI-1230 MRF8P29300HR6
CASE 375E-04, STYLE 1 NI-1230S MRF8P29300HSR6 PARTS ARE PUSH-PULL
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value --0.5, +65 --6.0, +10 -- 65 to +150 150 225 Unit Vdc Vdc C C C
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 61C, 320 W Pulsed, 300 sec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz Case Temperature 69C, 320 W Pulsed, 500 sec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz Symbol ZJC Value (2,3) 0.06 0.10 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8P29300HR6 MRF8P29300HSR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IGSS IDSS IDSS
Min -- -- --
Typ -- -- --
Max 1 1 10
Unit
Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 345 Adc) Gate Quiescent Voltage (2) (VDD = 30 Vdc, ID = 100 mAdc, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 30 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 30 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 30 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Adc Adc Adc
VGS(th) VGS(Q) VDS(on)
1.0 1.5 0.1
1.9 2.3 0.18
2.5 3.0 0.3
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
2.53 470 264
-- -- --
pF pF pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), f = 2900 MHz, 100 sec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps D IRL 12.0 47.0 -- 13.3 50.5 --17 15.0 -- --9 dB % dB
Typical Pulsed RF Performance (In Freescale 2x3 Compact Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), 300 sec Pulse Width, 10% Duty Cycle Frequency 2700 MHz 2800 MHz 2900 MHz 1. Each side of device measured separately. 2. Measurement made with device in push--pull configuration. Gps (dB) 13.9 14.0 13.0 D (%) 49.3 49.8 49.6 IRL (dB) --11 --18 --15
MRF8P29300HR6 MRF8P29300HSR6 2 RF Device Data Freescale Semiconductor
VBIAS C20 C18 C14 C10 C3 C30 Z22 R1 Z20 Z17 Z14 C1 RF INPUT Z1 Z13 Z2 Z3 Z4 Z5 Z6 Z7 C2 Z8 Z9 Z15 Z16 Z18 Z19
Z45 Z46 C31 Z11 Z12 R2 Z23 DUT
Z21 Z10
VBIAS C19 C15 C11 C7 C4 C29
+ Z47 Z28 C26 C6 C33 C9 C13 C17 C27
+ C34
+ C35
VSUPPLY
Z29 Z30 Z31 Z32 Z33 Z34 Z35 C23
Z42
RF OUTPUT Z43 Z44
Z41 Z24 Z25 Z26 Z27 Z36 Z37 Z38 Z39 C24 Z48 VSUPPLY Z40
+ C25 C5 C32 C8 C12 C16 C21
+ C22
+ C28
Z1* Z2 Z3 Z4 Z5 Z6 Z7* Z8, Z15 Z9, Z16 Z10, Z17
0.865 x 0.065 Microstrip 0.100 x 0.110 Microstrip 0.075 x 0.065 Microstrip 0.146 X 0.111 Microstrip 0.325 x 0.204 Microstrip 0.224 x 0.111 Microstrip 0.121 x 0.065 Microstrip 0.030 x 0.065 Microstrip 0.284 x 0.165 Microstrip 0.105 x 0.620 Microstrip
Z11, Z18 Z12, Z19 Z13* Z14 Z20, Z21, Z45, Z46 Z22, Z23* Z24, Z28 Z25, Z29 Z26, Z30 Z27, Z31 Z32, Z36
0.135 x 0.620 Microstrip 0.120 x 0.620 Microstrip 0.957 x 0.065 Microstrip 0.495 x 0.065 Microstrip 0.055 x 0.100 Microstrip 0.554 x 0.060 Microstrip 0.202 x 0.610 Microstrip 0.166 x 0.560 Microstrip 0.200 x 0.622 Microstrip 0.088 x 0.331 Microstrip 0.247 x 0.098 Microstrip
Z33, Z37 Z34, Z38 Z35, Z39 Z40 Z41* Z42* Z43 Z44* Z47, Z48*
0.112 x 0.232 Microstrip 0.158 x 0.152 Microstrip 0.058 x 0.065 Microstrip 0.505 x 0.065 Microstrip 0.917 x 0.065 Microstrip 0.092 x 0.065 Microstrip 0.695 x 0.111 Microstrip 0.479 x 0.065 Microstrip 0.409 x 0.100 Microstrip
* Line length includes microstrip bends
Figure 2. MRF8P29300HR6(HSR6) Test Circuit Schematic
MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 3
MRF8P29300H/HS Rev. 5
C27
C34 C17
C18 C20
C14
C10
C3
C30 R1
C26 C6 C33 C9
C13
C35
C1 C31 C2 C19 C15 C11 R2 C4 C29
C23 CUT OUT AREA
C24 C25 C5 C32 C8 C12 C21
C7
C28
C16 C22
Figure 3. MRF8P29300HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8P29300HR6(HSR6) Test Circuit Component Designations and Values
Part C1, C2 C3, C4 C5, C6, C25, C26, C29, C30 C7, C8, C9, C10 C11, C12, C13, C14 C15, C16, C17, C18 C19, C20 C21, C22, C27, C28, C34, C35 C23, C24 C31 C32, C33 R1, R2 PCB Description 3.3 pF Chip Capacitors 18 pF Chip Capacitors 5.1 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 1 F Chip Capacitors 22 F Chip Capacitors 470 F, 63 V Electrolytic Capacitors 5.1 pF Chip Capacitors 0.5 pF Chip Capacitor 1 F Chip Capacitors 5 Chip Resistors 0.030, r = 3.5 Part Number ATC600F3R3BT250XT ATC600F180JT250XT ATC100B5R1BT250XT ATC100B101JT500XT ATC100B102JT50XT GRM32ER72A105KA01L C5750KF1H226ZT MCGPR63V477M16X32--RH ATC600F5R1CT500XT ATC100B0R5BT500XT C3225JB2A105KT CRCW08055R00JNEA RF35A2 ATC ATC ATC ATC ATC Murata TDK Multicomp ATC ATC TDK Vishay Taconic Manufacturer
MRF8P29300HR6 MRF8P29300HSR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Coss Ciss C, CAPACITANCE (pF) Pout, OUTPUT POWER (dBm) 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc
60 59 58 57 56 55 54 53 52 51 50 35 36 37 38 P3dB = 55.16 dBm (328 W) P2dB = 54.82 dBm (303 W) P1dB = 54.19 dBm (263 W)
Ideal
Actual
10
Crss 1 0 4 8 12 16 20 24 28 32 VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 sec, Duty Cycle = 10% 39 40 41 42 43 44 45
Note: Each side of device measured separately. Figure 4. Capacitance versus Drain-Source Voltage
15 14.5 Gps, POWER GAIN (dB) 14 13.5 13 12.5 12 11.5 30 D VDD = 30 Vdc IDQ = 100 mA f = 2900 MHz Pulse Width = 300 sec Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED Gps 55 50 Gps, POWER GAIN (dB) 45 40 35 30 25 20 500 D, DRAIN EFFICIENCY (%) 16 15 14 13
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Output Power versus Input Power
IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 sec Duty Cycle = 10%
32 V 12 28 V 11 10 26 V VDD = 24 V 0 100 200 300 400 30 V
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power
16 1000 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 15 500 mA 14 200 mA 13 IDQ = 100 mA 12 0 100 200 300 400 Pout, OUTPUT POWER (WATTS) PULSED VDD = 30 Vdc f = 2900 MHz Pulse Width = 300 sec Duty Cycle = 10% 17 16 15 14 13 12 11 10 9 20 D 85_C
Figure 7. Pulsed Power Gain versus Output Power
55 25_C 50 85_C 45 40 25_C 35 30 25 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 sec, Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED 20
--30_C Gps TC = --30_C
15 500
Figure 8. Pulsed Power Gain versus Output Power
Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power
MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 5
D, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
400 Pout, OUTPUT POWER (WATTS) PULSED TC = --30_C 300 25_C 85_C
200
100 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 sec, Duty Cycle = 10% 0 0 4 8 12 16 20 24 Pin, INPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus Input Power
15 14.5 Gps, POWER GAIN (dB) IRL 14 D 13.5 13 12.5 12 2700 VDD = 30 Vdc IDQ = 100 mA Pulse Width = 300 sec Duty Cycle = 10% 2750 2800 f, FREQUENCY (MHz) 2850 50 49 48 47 2900 51 53 52 --8 --10 --12 --14 --16 --18 --20
Gps
Figure 11. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency
MRF8P29300HR6 MRF8P29300HSR6 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
D, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
109 108 MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 30 Vdc, Pout = 320 W Peak, Pulse Width = 300 sec, Duty Cycle = 10%, and D = 45%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature
MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 7
Zo = 10
f = 2900 MHz f = 2900 MHz Zsource f = 2700 MHz f = 2700 MHz Zload
VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak f MHz 2700 2800 2900 Zsource 4.7 -- j2.0 4.7 -- j1.7 4.7 -- j1.5 Zload 7.8 -- j1.0 8.7 -- j0.2 9.4 -- j0.7
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
--
Output Matching Network
-Z source Z
+ load
Figure 13. Series Equivalent Source and Load Impedance
MRF8P29300HR6 MRF8P29300HSR6 8 RF Device Data Freescale Semiconductor
C11 C13 R1 VGS C3 C5 C7 C9 VDS
CUT OUT AREA
C1
R3
R4
C2
VGS R2
C4
C6
C8
C10
VDS
C14 MRF8P29300H Rev. 3 C12
Figure 14. MRF8P29300HR6(HSR6) 2x3 Compact Test Circuit Component Layout
Table 6. MRF8P29300HR6(HSR6) 2x3 Compact Test Circuit Component Designations and Values
Part C1, C2 C3, C4 C5, C6, C11, C12 C7, C8, C9, C10 C13, C14 R1, R2, R3, R4 PCB Description 4.7 pF Chip Capacitors 47 F, 16 V Tantalum Capacitors 100 pF Chip Capacitors 15 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitors 10 Chip Resistors 0.050, r = 10.2 Part Number ATC100A4R7BT150XT T491D476K016AT ATC100B101JT500XT ATC100A150JT150XT MCGPR63V477M13X26--RH CRCW120610R0JNEA RO3010 ATC Kemet ATC ATC Multicomp Vishay Rogers Manufacturer
MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 9
TYPICAL CHARACTERISTICS -- 2x3 COMPACT TEST FIXTURE
59 58 Pout, OUTPUT POWER (dBm) 57 56 55 54 53 52 51 50 49 34 35 36 37 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 sec, Duty Cycle = 10% 38 39 40 41 42 43 44 P1dB = 54.3 dBm (269 W) P3dB = 55.4 dBm (347 W) P2dB = 55 dBm (316 W) Actual Ideal
Pin, INPUT POWER (dBm) PULSED
Figure 15. Pulsed Output Power versus Input Power
15.5 55 50 45 40 35 D 30 25 20 100 Pout, OUTPUT POWER (WATTS) PULSED 500 D, DRAIN EFFICIENCY (%) --5 --10 --15 --20 --25 --30 --35
VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz 15 Pulse Width = 300 sec, Duty Cycle = 10% Gps
Gps, POWER GAIN (dB)
14.5 14 13.5 13 12.5 12 30
Figure 16. Pulsed Power Gain and Drain Efficiency versus Output Power
15 14.5 Gps, POWER GAIN (dB) 14 13.5 13 D 12.5 12 2700 48 47 2900 53 52 51 50 49
VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Pulse Width = 300 sec, Duty Cycle = 10% IRL Gps
2750
2800 f, FREQUENCY (MHz)
2850
Figure 17. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency
MRF8P29300HR6 MRF8P29300HSR6 10 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
D, DRAIN EFFICIENCY (%)
PACKAGE DIMENSIONS
MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 11
MRF8P29300HR6 MRF8P29300HSR6 12 RF Device Data Freescale Semiconductor
MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 13
MRF8P29300HR6 MRF8P29300HSR6 14 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P29300H and MRF8P29300HS parts will be available for 2 years after release of MRF8P29300H and MRF8P29300HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P29300H and MRF8P29300HS in the R6 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Feb. 2011 * Initial Release of Data Sheet Description
MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 15
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MRF8P29300HR6 MRF8P29300HSR6
Rev. 16 0, 2/2011 Document Number: MRF8P29300H
RF Device Data Freescale Semiconductor

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