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| Technische Information / Technical Information IGBT-Module IGBT-Modules FF300R12KS4 vorlaufige Daten preliminary data Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms Tvj = 25C VCES 1200 V TC = 60C TC = 25 C tP = 1 ms, TC = 60C IC,nom. IC ICRM 300 370 600 A A A TC=25C; Transistor Ptot 1950 W VGES +/- 20V V IF 300 A IFRM 600 A VR = 0V, t p = 10ms, T Vj = 125C It 2 18 kA s 2 RMS, f = 50 Hz, t = 1 min. VISOL 2.500 V Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Gateladung gate charge Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current IC = 300A, V GE = 15V, Tvj = 25C IC = 300A, V GE = 15V, Tvj = 125C IC = 12 mA, VCE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,5 typ. 3,20 3,85 5,50 max. 3,75 6,50 V V V f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 20 - nF f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cres - 1,4 - nF VGE = -15V ... + 15V; V CE=...V QG - 3,2 - C VCE = 1200V, V GE = 0V, Tvj = 25C ICES - - 5 mA VCE = 0V, V GE = 20V, Tvj = 25C IGES - - 400 nA prepared by: MOD-D2; Martin Knecht approved by: SM TM; Wilhelm Rusche date of publication : 2002-10-21 revision: 2.1 1 (9) DB_FF300R12KS4_2.1 2002-10-21 Technische Information / Technical Information IGBT-Module IGBT-Modules FF300R12KS4 vorlaufige Daten preliminary data Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 300 A, V CC = 600V VGE = 15V, RG = 3,0 , Tvj = 25C VGE = 15V, RG = 3,0 , Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 300 A, V CC = 600V VGE = 15V, RG = 3,0 , Tvj = 25C VGE = 15V, RG = 3,0 , Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 300 A, V CC = 600V VGE = 15V, RG = 3,0 , Tvj = 25C VGE = 15V, RG = 3,0 , Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 300 A, V CC = 600V VGE = 15V, RG = 3,0 , Tvj = 25C VGE = 15V, RG = 3,0 , Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip IC = 300 A, V CC = 600V, V GE = 15V RG = 3,0 , Tvj = 125C, L = 60 nH IC = 300 A, V CC = 600V, V GE = 15V RG = 3,0 , Tvj = 125C, L = 60 nH tP 10s, V GE 15V TVj125C, VCC=900 V, VCEmax=VCES -LCE *di/dt Anschlusse / terminals 2-3 ISC LCE 1950 20 A nH Eoff 15 mJ Eon 25 mJ tf 0,06 0,07 s s td,off 0,53 0,59 s s tr 0,09 0,10 s s td,on 0,10 0,13 s s min. typ. max. pro Zweig / per arm, TC=25C RCC'+EE' - 0,7 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 300 A, V GE = 0V, Tvj = 25C IF = 300 A, V GE = 0V, Tvj = 125C IF = 300 A, - diF/dt = 4500 A/s VR = 600V, V GE = -15V, Tvj = 25C VR = 600V, V GE = -15V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 300 A, - diF/dt = 4500 A/s VR = 600V, V GE = -15V, Tvj = 25C VR = 600V, V GE = -15V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 300 A, - diF/dt = 4500 A/s VR = 600V, V GE = -15V, Tvj = 25C VR = 600V, V GE = -15V, Tvj = 125C Erec 7 15 mJ mJ Qr 18 42 C C IRM 230 300 A A VF min. - typ. 2,00 1,70 max. 2,55 V V 2 (9) DB_FF300R12KS4_2.1 2002-10-21 Technische Information / Technical Information IGBT-Module IGBT-Modules FF300R12KS4 vorlaufige Daten preliminary data Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor,DC , pro Modul / per module Transistor / transistor,DC , pro Zweig / per arm Diode / Diode, DC, pro Modul / per module Diode / Diode, DC, pro Zweig / per arm Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK RthJC - typ. 0,010 max. 0,032 0,064 0,050 0,100 K/W K/W K/W K/W K/W Tvj max - - 150 C Tvj op -40 - 125 C Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance distance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight Schraube / screw M6 M 3,0 Cu Al2O3 20 mm 11 mm 425 Nm - 6,0 Anschlusse / terminals M6 M 2,5 - 5,0 Nm G 340 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9) DB_FF300R12KS4_2.1 2002-10-21 Technische Information / Technical Information IGBT-Module IGBT-Modules FF300R12KS4 vorlaufige Daten preliminary data Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) VGE = 15V 600 500 Tvj = 25C Tvj = 125C 400 IC [A] 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 600 IC = f (VCE) Tvj = 125C 500 VGE = 8V VGE = 9V VGE = 10V 400 VGE = 12V VGE = 15V VGE = 20V IC [A] 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 VCE [V] 4 (9) DB_FF300R12KS4_2.1 2002-10-21 Technische Information / Technical Information IGBT-Module IGBT-Modules FF300R12KS4 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) vorlaufige Daten preliminary data IC = f (VGE) V CE = 20V 600 Tvj = 25C Tvj = 125C 500 400 IC [A] 300 200 100 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 600 Tvj = 25C IF = f (VF) 500 Tvj = 125C 400 IF [A] 300 200 100 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 VF [V] 5 (9) DB_FF300R12KS4_2.1 2002-10-21 Technische Information / Technical Information IGBT-Module IGBT-Modules FF300R12KS4 vorlaufige Daten preliminary data Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) VGE=15V, RG = 3,0 , VCE = 600V, T vj =125C Schaltverluste (typisch) Switching losses (typical) 70 60 50 E [mJ] 40 30 20 10 0 0 100 200 Eoff Eon Erec 300 400 500 600 IC [A] Schaltverluste (typisch) Switching losses (typical) 140 120 100 80 60 40 20 0 0 2 4 6 8 Eoff Eon Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V, IC = 300 A , VCE = 600V , T vj = 125C E [mJ] 10 12 14 16 18 20 RG [] 6 (9) DB_FF300R12KS4_2.1 2002-10-21 Technische Information / Technical Information IGBT-Module IGBT-Modules FF300R12KS4 vorlaufige Daten preliminary data Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA) V GE = 15V , T vj= 125C 700 600 IC [A] IC,Chip IC,Modul 500 400 300 200 100 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7 (9) DB_FF300R12KS4_2.1 2002-10-21 Technische Information / Technical Information IGBT-Module IGBT-Modules FF300R12KS4 vorlaufige Daten preliminary data Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t) 0,1 Zth:IGBT Zth:Diode ZthJC [K / W] 0,01 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT i [s] : IGBT ri [K/kW] : Diode i [s] : Diode 1 7,16 0,0020 15,47 0,0015 2 21,67 0,0300 40,66 0,0327 3 28,23 0,0660 41,90 0,0561 4 6,94 1,6550 1,97 0,3872 8 (9) DB_FF300R12KS4_2.1 2002-10-21 Technische Information / Technical Information IGBT-Module IGBT-Modules FF300R12KS4 vorlaufige Daten preliminary data Gehausemae / Schaltbild Package outline / Circuit diagram 9 (9) DB_FF300R12KS4_2.1 2002-10-21 |
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