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ON Semiconductort
SWITCHMODEt Series NPN Silicon Power Transistor
. . . designed for high current, high speed, high power applications.
BUV22
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS
* High DC current gain: * *
HFE min. = 20 at IC = 10 A Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A Very fast switching times: TF max. = 0.35 s at IC = 20 A
Rating
DERATING FACTOR
II II II II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIII I I I II II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Symbol Value 250 300 7 300 290 40 50 8 Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc _C Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VCEO(sus) VCBO VEBO VCEX IC ICM IB PD VCER Collector-Emitter Voltage (VBE = -1.5 V) Collector-Emitter Voltage (RBE = 100 ) Collector-Current -- Continuous -- Peak (pw v 10 ms) Base-Current continuous Total Power Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range 250 Watts TJ, Tstg -65 to 200
CASE 197A-05 TO-204AE (TO-3)
THERMAL CHARACTERISTICS
Characteristic
Symbol JC
Max 0.7
Unit
Thermal Resistance, Junction to Case
_C/W
1.0 0.8 0.6 0.4 0.2
0
40
80
120
160
200
TC, TEMPERATURE (C)
Figure 1. Power Derating
(c) Semiconductor Components Industries, LLC, 2001
1
March, 2001 - Rev. 9
Publication Order Number: BUV22/D
II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIII I I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII III I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIII I I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I I I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
1Pulse
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
SWITCHING CHARACTERISTICS (Resistive Load)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS1
SECOND BREAKDOWN
OFF CHARACTERISTICS1
Fall Time
Storage Time
Turn-on Time
Current Gain -- Bandwidth Product (VCE = 15 V, IC = 2 A, f = 4 MHz)
Base-Emitter Saturation Voltage (IC = 40 A, IB = 4 A)
Collector-Emitter Saturation Voltage (IC = 10 A, IB = 1 A) (IC = 20 A, IB = 2.5 A)
DC Current Gain (IC = 10 A, VCE = 4 V) (IC = 20 A, VCE = 4 V)
Second Breakdown Collector Current with base forward biased (VCE = 20 V, t = 1 s) (VCE = 140 V, t = 1 s)
Emitter-Cutoff Current (VEB = 5 V)
Emitter-Base Reverse Voltage (IE = 50 mA)
Collector-Emitter Cutoff Current (VCE = 200 V)
Collector Cutoff Current at Reverse Bias (VCE = 300 V, VBE = -1.5 V) (VCE = 300 V, VBE = -1.5 V, TC = 125_C)
Collector-Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH)
Test: Pulse Width v 300 s, Duty Cycle v 2%.
Characteristic
(IC = 20 A IB1 = IB2 = 2 5 A A, 2.5 A, VCC = 100 V, RC = 5 )
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BUV22
2 VCEO(sus) Symbol VCE(sat) VBE(sat) VEBO ICEO IEBO ICEX hFE IS/b ton fT ts tf 12 0.15 Min 250 8.0 20 10 7 3.0 12.0 0.35 Max 2.0 0.8 1.5 1.0 1.5 1.0 3.0 60 mAdc mAdc mAdc MHz Unit Vdc Vdc Adc Vdc s V
BUV22
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown limitations do not derate the same as thermal limitations. At high case temperatures, thermal limitations will reduce the power that can handled to values less than the limitations imposed by second breakdown.
1 10 100 250 VCE, COLLECTOR-EMITTER VOLTAGE (V)
40 IC, COLLECTOR CURRENT (A) 10
1
0.1
Figure 2. Active Region Safe Operating Area
2.0 IC/IB = 8 1.6 V, VOLTAGE (V) 1.2 0.8 0.4 0 VBE
50 45 40 35 30 25 20 15 10 5 VCE = 5 V
VCE
1
10
IC, COLLECTOR CURRENT (A)
0 0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 3. "On" Voltages
Figure 4. DC Current Gain
t, TIME ( s)
3.0 2.0 1.0 0.4 0.3 0.2 4 8 12 16 tS RC IB2 IB1 RB
VCC 104 F
ton tF 20 24
VCC = RC = RB = IB1 = IC/IB =
100 V 5 2.7 IB2 8
RC - RB: Non inductive resistances
IC, COLLECTOR CURRENT (A)
Figure 5. Resistive Switching Performance
Figure 6. Switching Times Test Circuit
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3
BUV22
PACKAGE DIMENSIONS TO-204AE (TO-3) CASE 197A-05 ISSUE J
A N C -T- E D
2 PL SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77
K
M
0.30 (0.012)
TQ
M
Y
M
U V
2
L G
-Y-
H
B
1
-Q- 0.25 (0.010)
M
TY
M
SWITCHMODE is a registered trademark of Semiconductor Components Industries, LLC (SCILLC)
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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BUV22/D

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