 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV) 2 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Applications l 4 V gate drive l Low drain-source ON resistance l High forward transfer admittance : RDS (ON) = 80 m (typ.) : |Yfs| = 8.0 S (typ.) Unit: mm l Low leakage current : IDSS = -100 A (max) (VDS = -60 V) l Enhancement-mode : Vth = -0.8~-2.0 V (VDS = -10 V, ID = -1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating -60 -60 20 -14 -56 40 150 -55~150 Unit V V V A W C C Pulse(Note 1) Drain power dissipation (Tc = 25C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10R1B Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C / W C / W Weight: 1.9 g (typ.) Note 1: Please use devices on condition that the channel temperature is below 150C. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-06-24 2SJ304 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -60 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -5 A VGS = -10 V, ID = -7 A VDS = -10 V, ID = -7 A Min -60 -0.8 5.0 Typ. 130 80 8.0 1200 220 550 20 Max 10 -100 -2.0 190 120 pF Unit A A V V m S Turn-on time Switching time Fall time ton 30 ns tf 25 Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD -48 V, VGS = -10 V, ID = -14 A 100 45 30 15 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = -14 A, VGS = 0 V IDR = -14 A, VGS = 0 V dIDR / dt = 50 A / s Min Typ. 110 0.18 Max -14 -56 1.7 Unit A A V ns C Marking 2 2002-06-24 2SJ304 3 2002-06-24 2SJ304 4 2002-06-24 2SJ304 5 2002-06-24 2SJ304 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-06-24 |
Price & Availability of 2SJ304
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |