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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6 mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque Mounting force (IXFK) (IXFX) (IXFK) (IXFX) Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
IXFK30N110P IXFX30N110P
RDS(on) trr
TO-264 (IXFK)
VDSS ID25
= =
1100V 30A 360m 300ns
Maximum Ratings 1100 1100 30 40 30 75 15 1.5 15 960 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5..27 10 6 V V V V A A A J V/ns W C C C C C Nm/lb.in. N/lb g g
G = Gate S = Source (TAB) D = Drain TAB = Drain
G
D
S
(TAB)
PLUS247 (IXFX)
Features Fast intrinsic diode International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C
Characteristic Values Min. Typ. Max. 1100 3.5 6.5 200 50 2.5 360 V V nA A mA m
Applications: High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2008 IXYS CORPORATION, All rights reserved
DS99855B(04/08)
IXFK30N110P IXFX30N110P
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Ciss Coss Crss RGI td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100 A/s VR = 100 V, VGS = 0V 0.15 VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS= 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 15 25 13.6 795 70 1.50 50 48 83 52 235 102 79 S nF pF pF ns ns ns ns nC nC nC 0.13 C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248
TO-264 (IXFK) Outline
Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 30 120 1.5 300 1.8 13 A A V ns C A
PLUS 247TM (IXFX) Outline
Note 1: Pulse test, t 300s; duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244
7,157,338B2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK30N110P IXFX30N110P
Fig. 1. Output Characteristics @ 25C
30 VGS = 10V 8V 25 70 60 50 VGS = 10V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
20
ID - Amperes
7V 40 30 20
15 7V 10
6V
5 6V 0 0 1 2 3 4 5 6 7 8 9 10
10 5V 0 0 5 10 15 20 25 30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
30 VGS = 10V 25 2.8 3.2
Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
ID - Amperes
20
7V
2.4 2 1.6 1.2 0.8 I D = 30A I D = 15A
15
10 6V 5 5V 0 0 5 10 15 20 25
0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current
2.6 2.4 2.2 VGS = 10V TJ = 125C 35 30 25
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
ID - Amperes
TJ = 25C
2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 35 40 45 50 55 60 65
20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXFK30N110P IXFX30N110P
Fig. 7. Input Admittance
40 35 30 55 50 45 40 TJ = 125C 25C - 40C TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
25 20 15 10 5 0 4.5 5.0 5.5
35 30 25 20 15 10 5 0
25C
125C
6.0
6.5
7.0
7.5
8.0
0
5
10
15
20
25
30
35
40
45
50
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
90 80 70 16 14 12 VDS = 550V I D = 15A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
50 40 30 20 10 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 125C TJ = 25C
VGS - Volts
60
10 8 6 4 2 0 0 50 100 150 200 250 300 350
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1.000
Fig. 12. Maximum Transient Thermal Impedance
f = 1 MHz Capacitance - PicoFarads
10,000
Ciss
1,000 Coss 100 Crss 10 0 5 10 15 20 25 30 35 40
Z(th)JC - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_30N110P(96) 04-01-08-A

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