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Philips Semiconductors
Letter Symbols - TRANSISTORS
LETTER SYMBOLS The letter symbols for TRANSISTORS detailed in this section are based on IEC publication number 148. Letter symbols for currents, voltages and powers BASIC LETTERS I, i current V, v voltage P, p power. Upper-case letter symbols are used to represent all values except instantaneous values that vary with time, these are represented by lower-case letters. SUBSCRIPTS A, a (AV), (av) B, b C, c D, d E, e F, f G, g K, k M, m O, o R, r anode terminal average value base terminal collector terminal drain terminal emitter terminal forward gate terminal cathode terminal peak value as third subscript: the terminal not mentioned is open-circuit as first subscript: reverse. As second subscript: repetitive. As third subscript: with a specified resistance between the terminal not mentioned and the reference terminal as first or second subscript: source terminal (FETs only). As second subscript: non-repetitive (not FETs). As third subscript: short circuit between the terminal not mentioned and the reference terminal specified circuit replaces R to indicate the actual working voltage, current or power of voltage reference and voltage reference diodes. * Average total values, e.g. IB(AV) * Peak total values, e.g. IBM
General
* Root-mean-square total values, e.g. IB(RMS). Lower-case subscripts are used for the indication of values applying to the varying component alone: * Instantaneous values, e.g. ib * Root-mean-square values, e.g. Ib(rms) * Peak values, e.g. Ibm * Average values, e.g. Ib(av). If more than one subscript is used, the subscript for which both styles exist are either all upper-case or all lower-case. ADDITIONAL RULES FOR SUBSCRIPTS
Transistor currents
If it is necessary to indicate the terminal carrying the current, this should be done by the first subscript (conventional current flow from the external circuit into the terminal is positive). Examples: IB, iB, ib, Ibm.
Transistor voltages
If it is necessary to indicate the points between which a voltage is measured, this should be done by the first two subscripts. The first subscript indicates the terminal at which the voltage is measured and the second the reference terminal or the circuit node. Where there is no possibility of confusion, the second subscript may be omitted. Examples: VBE, vBE, vbe, Vbem.
Supply voltages or currents
Supply voltages or supply currents are indicated by repeating the appropriate terminal subscript. Examples: VCC, IEE. If it is necessary to indicate a reference terminal, this should be done by a third subscript. Example: VCCE.
(RMS), (rms) root-mean-square value S, s
X, x Z, z
Subscripts for devices with more than one terminal of the same kind
If a device has more than one terminal of the same kind, the subscript is formed by the appropriate letter for the terminal, followed by a number. In the case of multiple subscripts, hyphens may be necessary to avoid confusion.
No additional subscript is used for DC values. Upper-case subscripts are used for the indication of: * Continuous (DC) values (without signal), e.g. IB * Instantaneous total values, e.g. iB 1999 May 07
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Philips Semiconductors
Letter Symbols - TRANSISTORS
Examples: IB2 VB2-E continuous (DC) current flowing into the second base terminal continuous (DC) voltage between the terminals of second base and emitter terminals.
General
impedances and admittances, inductances and capacitances. BASIC LETTERS The following list comprises the most important basic letters used for electrical parameters of semiconductor devices. B, b C G, g H, h L R, r X, x Y, y Z, z susceptance (imaginary part of an admittance) capacitance conductance (real part of an admittance) hybrid parameter inductance resistance (real part of an impedance) reactance (imaginary part of an impedance) admittance impedance.
Subscripts for multiple devices
For multiple unit devices, the subscripts are modified by a number preceding the letter subscript. In the case of multiple subscripts, hyphens may be necessary to avoid confusion. Examples: I2C continuous (DC) current flowing into the collector terminal of the second unit
V1C-2C continuous (DC) voltage between the collector terminals of the first and second units. Application of the rules Figure 1 represents a transistor collector current as a function of time. It comprises a continuous (DC) current and a varying component.
Upper-case letters are used for the representation of: * Electrical parameters of external circuits and of circuits in which the device forms only a part * All inductances and capacitances. Lower-case letters are used for the representation of electrical parameters inherent in the device, with the exception of inductances and capacitances. SUBSCRIPTS
collector current
MBD537
General subscripts
The following list comprises the most important general subscripts used for electrical parameters of semiconductor devices. F, f forward (forward transfer) input load output reverse (reverse transfer) source.
I cm I c(rms) I c(av) I CM I C(RMS) IC (no signal) ic I C(AV) ic
I, i (or 1) L, l O, o (or 2) R, r S, s
0
time
Fig.1 Collector current as a function of time.
Examples: Zs, hf, hF. The upper-case variant of a subscript is used for the designation of static (DC) values.
Letter symbols for electrical parameters DEFINITION For the purpose of this publication, the term `electrical parameter' applies to four-pole matrix parameters, elements of electrical equivalent circuits, electrical 1999 May 07
Examples: hFE RE static value of forward current transfer ratio in common-emitter configuration (DC current gain) DC value of the external emitter resistance.
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Philips Semiconductors
Letter Symbols - TRANSISTORS
The static value is the slope of the line from the origin to the operating point on the appropriate characteristic curve, i.e. the quotient of the appropriate electrical quantities at the operating point. The lower-case variant of a subscript is used for the designation of small-signal values. Examples: hfe small-signal value of the short-circuit forward current transfer ratio in common-emitter configuration small-signal value of the external impedance.
General
Ze = Re + jXe
If more than one subscript is used, subscripts for which both styles exist are either all upper-case or all lower-case. Examples: hFE, yRE, hfe.
Subscripts for four-pole matrix parameters
The first letter subscript (or double numeric subscript) indicates input, output, forward transfer or reverse transfer. Examples: hi (or h11), ho (or h22), hf (or h21), hr (or h12). A further subscript is used for the identification of the circuit configuration. When no confusion is possible, this further subscript may be omitted. Examples: hfe (or h21e), hFE (or h21E). DISTINCTION BETWEEN REAL AND IMAGINARY PARTS If it is necessary to distinguish between real and imaginary parts of electrical parameters, no additional subscripts should be used. If basic symbols for the real and imaginary parts exist, these may be used. Examples: Zi = Ri + jXi, yfe = gfe + jbfe. If such symbols do not exist, or if they are not suitable, the following notation is used: Examples: Re (hib) etc. for the real part of hib Im (hib) etc. for the imaginary part of hib.
1999 May 07
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