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| HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent Q1 (Transistor) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -50 -50 -5 -100 Unit V V V mA Q2 (MOS-FET) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA Weight: g (typ.) Marking Q1, Q2 Common Ratings (Ta = 25C) Characteristics Collector power dissipation Junction temperature Storage temperature range Symbol PC (Note) Tj Tstg Rating 200 150 -55~150 Unit FT mW C C Note: Total rating Equivalent Circuit (top view) 6 5 4 Q1 Q2 1 2 3 1 2003-03-12 HN7G02FU Q1 (Transistor) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input resistor Symbol ICBO IEBO hFE VCE (sat) R1 Test Condition VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 mA IC = 5 mA, IB = -0.25 mA 3/4 Min 3/4 3/4 120 3/4 3.29 Typ. 3/4 3/4 3/4 -0.1 4.7 Max -100 -100 400 -0.3 6.11 V kW Unit nA nA Q2 (MOS-FET) Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Symbol IGSS V (BR) DSS IDSS Vth iYfsi RDS (ON) Test Condition VGS = 10 V, VDS = 0 ID = 100 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA VGS = 2.5 V Min 3/4 20 3/4 0.5 20 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 20 Max 1 3/4 1 1.5 3/4 40 Unit mA V mA V mS W 2 2003-03-12 HN7G02FU Q1 (Transistor) IC - VI (ON) -3000 -50 IC - VI (OFF) (A) IC -10 -5 -3 Ta = 100C 25 -25 -1 Common emitter -0.5 -0.3 -0.1 -0.3 -1 -3 VCE = -0.2 V -10 -30 -100 IC (A) -30 -1000 -500 -300 Collector current Collector current Ta = 100C 25 -25 -100 -50 -30 -0 -0.2 -0.4 -0.6 -0.8 -1 Common emitter VCE = -5 V -1.2 -1.4 -1.6 Input voltage VI (ON) (V) Input voltage VI (OFF) (V) hFE - IC -3000 -3 VCE (sat) - IC Collector-emitter saturation voltage VCE (sat) (V) -1000 -1 -0.5 -0.3 hFE -500 -300 Ta = 100C DC current gain 25 -100 -50 -30 Common emitter VCE = -5 V -10 -0.1 -0.3 -1 -3 -10 -30 -100 -25 -0.1 -0.05 -0.03 Ta = 100C -25 25 Common emitter IC/IB = 20 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) 3 2003-03-12 HN7G02FU Q2 (MOS-FET) (a) Switching time test circuit 2.5 V IN 50 9 0 10 mS VIN RL ID OUT VDD = 3 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 W) Common source Ta = 25C 2.5 V (b) VIN VGS 0 VDD (c) VOUT VDS VDS (ON) ton 90% tr toff tf 90% 10% 10% VDD ID - VDS 60 Common source Ta = 25C 2.5 2.2 1.2 ID - VDS () Common source 1.1 1.2 Ta = 25C 50 1.0 2.5 (mA) 40 (mA) ID 2.0 0.8 1.05 0.6 ID 30 Drain current Drain current 1.8 20 1.6 VGS = 1.4 V 1.2 0.4 VGS = 1.0 V 0.95 0.9 0.8 10 0.2 0 0 2 4 6 8 10 12 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain-source voltage VDS (V) Drain-source voltage VDS (V) IDR - VDS 50 30 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0 S G Common source VGS = 0 Ta = 25C 50 30 10 ID - VGS Common source VDS = 3 V (mA) (mA) D 5 3 1 Ta = 100C IDR Drain current IDR ID 0.5 0.3 0.1 0.05 0.03 0.01 0 25 -25 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 1 2 3 4 5 Drain-source voltage VDS (V) Gate-source voltage VGS (V) 4 2003-03-12 HN7G02FU iYfsi - ID 100 100 Common source 50 30 VDS = 3 V Ta = 25C 50 30 C - VDS Common source VGS = 0 V f = 1 MHz Ta = 25C iYfsi (mS) Forward transfer admittance (pF) Capacitance C 10 5 3 Ciss Coss Crss 1 0.5 0.3 0.1 10 5 3 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 20 Drain current ID (mA) Drain-source voltage VDS (V) VDS (ON) - ID 3000 Common source 1000 VGS = 2.5 V 1000 Ta = 25C 500 300 t - ID Drain-source ON resistance VDS (ON) (mV) (ns) toff tf 100 ton tr ID 2.5 V 0 50 9 VIN 10 ms VOUT RL VDD = 3 V 10 3 D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 W) Common source Ta = 25C 30 100 100 50 30 10 5 0.5 1 3 5 10 30 50 100 10 0.3 Switching time t 1 Drain current ID (mA) Drain current ID (mA) PD - Ta 200 (mW) Power Dissipation PD 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 5 2003-03-12 HN7G02FU RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2003-03-12 |
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