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| J/SST108 Series N-Channel JFETs J108 J109 J110 Product Summary Part Number VGS(off) (V) J/SST108 J/SST109 J/SST110 -3 to -10 -2 to -6 -0.5 to -4 SST108 SST109 SST110 rDS(on) Max (W) 8 12 18 ID(off) Typ (pA) 20 20 20 tON Typ (ns) 4 4 4 Features D D D D D Low On-Resistance: J108 <8 W Fast Switching--tON: 4 ns Low Leakage: 20 pA Low Capacitance: 11 pF Low Insertion Loss Benefits D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Applications D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Description The J/SST108 series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching. featuring the lowest rDS(on) of any TO-236 (SOT-23) JFET device. The SST108 series is comprised of surface-mount devices TO-226AA (TO-92) The TO-226AA (TO-92) plastic package provides a low-cost option. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products packaged in TO-206AC (TO-52), see the 2N5432/5433/5434 data sheet. TO-236 (SOT-23) D 1 D 1 3 G S 2 S 2 G 3 Top View SST108 (I8)* SST109 (I9)* SST110 (I0)* *Marking Code for TO-236 Top View J108, J109, J110 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70231. Siliconix S-52424--Rev. D, 14-Apr-97 1 J/SST108 Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Specificationsa Limits J/SST108 J/SST109 J/SST110 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID( ff) D(off) rDS(on) VGS(F) IG = -1 mA , VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 10 mA VDS = 5 V, VGS = -10 V TA = 125_C VGS = 0 V, VDS v 0.1 V IG = 1 mA , VDS = 0 V -32 -25 -3 80 -10 -3 -25 -2 40 -3 -6 -25 -0.5 10 -3 -4 V mA -0.01 -5 -0.01 0.02 1.0 nA 3 3 3 8 0.7 12 18 W V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs VDS = 5 V ID = 10 mA f = 1 kHz V, mA, gos rds(on) Ci iss VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 0 V VGS = 0 V f = 1 MHz VDS = 0 V VGS = -10 V f = 1 MHz SST J Series SST J Series 60 60 11 11 3.5 15 15 15 nV Hz 85 85 85 pF 0.6 8 12 18 W 17 mS Crss en VDG = 5 V, ID = 10 mA f = 1 kHz Switching Turn-On Turn On Time Turn-Off Time td(on) tr td(off) tf VDD = 1.5 V, VGS(H) = 0 V GS( ) See Switching Diagram 3 1 4 18 ns Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. NIP 2 Siliconix S-52424--Rev. D, 14-Apr-97 J/SST108 Series Typical Characteristics 20 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 15 V, VGS = 0 V 1000 rDS(on) - Drain-Source On-Resistance ( W ) I DSS - Saturation Drain Current (mA) 50 On-Resistance vs. Drain Current TA = 25_C 16 800 40 VGS(off) = -2 V 30 12 rDS IDSS 600 8 400 20 -4 V 10 -8 V 0 1 10 ID - Drain Current (mA) 100 4 200 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 40 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance vs. Temperature ID = 10 mA rDS changes X 0.7%/_C 100 Output Characteristics VGS(off) = -2 V 32 VGS(off) = -2 V 24 I D - Drain Current (mA) 80 60 VGS = 0 V -0.2 V -0.4 V 16 -4 V 8 -8 V 40 20 -0.6 V -0.8 V 0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature (_C) 5 0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) 30 Turn-On Switching tr approximately independent of ID VDD = 1.5 V, RG = 50 W VGS(L) = -10 V Switching Time (ns) td(on) @ ID = 25 mA Turn-Off Switching td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = -10 V tf 4 Switchng Time (ns) 24 3 18 VGS(off) = -2 V 2 td(on) @ ID = 10 mA 12 VGS(off) = -8 V 1 tr 6 td(off) 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 5 10 15 20 25 ID - Drain Current (mA) Siliconix S-52424--Rev. D, 14-Apr-97 3 J/SST108 Series Typical Characteristics (Cont'd) 100 Capacitance vs. Gate-Source Voltage g fs - Forward Transconductance (mS) VDS = 0 V f = 1 MHz 100 Transconductance vs. Drain Current VGS(off) = -4 V 80 Capacitance (pF) 60 TA = -55_C 10 25_C 125_C 40 Ciss 20 Crss VDS = 5 V f = 1 kHz 1 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 1 10 ID - Drain Current (mA) 100 200 g fs - Forward Transconductance (mS) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 50 gfs and gos @ VDS = 5 V VGS = 0 V, f = 1 kHz 100 Noise Voltage vs. Frequency VDS = 5 V 160 40 120 e n - Noise Voltage gfs 30 (nV / Hz) 10 ID = 10 mA g os - Output Conductance (mS) 80 gos 20 40 10 40 mA 1 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 100 nA Gate Leakage Current 100 TA = 125_C Common Gate Input Admittance gig 10 nA I G - Gate Leakage 5 mA ID =10 mA 10 1 nA 1 mA IGSS @ 125_C 5 mA TA = 25_C 10 pA 10 mA 1 mA IGSS @ 25_C 1 pA 0 4 8 12 16 20 VDG - Drain-Gate Voltage (V) 0.1 10 20 50 100 f - Frequency (MHz) (mS) 1 100 pA big TA = 25_C VDG = 20 V ID = 20 mA 4 Siliconix S-52424--Rev. D, 14-Apr-97 J/SST108 Series Typical Characteristics (Cont'd) 100 Common Gate Forward Admittance -gfg 10 Common Gate Reverse Admittance TA = 25_C VDG = 20 V ID = 20 mA 10 (mS) (mS) 1.0 -grg -brg bfg 1 TA = 25_C VDG = 20 V ID = 20 mA 0.1 10 20 50 100 f - Frequency (MHz) 0.1 0.01 10 20 50 100 f - Frequency (MHz) 100 Common Gate Output Admittance TA = 25_C VDG = 20 V ID = 20 mA 10 bog (mS) 1 gog 0.1 10 20 50 100 f - Frequency (MHz) Switching Time Test Circuit J/SST108 VGS(L) RL* ID(on) *Non-inductive -12 V 150 W 10 mA J/SST109 -7 V 150 W 10 mA J/SST110 -5 V 150 W 10 mA VGS(H) VDD RL OUT Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VGS(L) 1 kW VIN Scope 51 W 51 W Siliconix S-52424--Rev. D, 14-Apr-97 5 |
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