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Hybride Impuls-Laserdiode mit integrierter Treiberstufe 14 W Spitzenleistung Hybrid Pulsed Laser Diode with Integrated Driver Stage 14 W Peak Power Lead (Pb) Free Product - RoHS Compliant SPL LL85
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Besondere Merkmale * Kleines kostengunstiges Plastik-Gehause * Integriert sind ein FET und Kondensatoren zur Impulsansteuerung * InAlGaAs/GaAs kompressiv verspannte Quantenfilmstruktur * Hochleistungslaser mit Large-Optical-Cavity" (LOC) Struktur * Laserapertur 200 m x 2 m * Schneller Betrieb (< 30 ns Impulsbreite) * Niedrige Versorgungsspannung (< 9 V) Anwendungen * * * * Entfernungsmessung Sicherheit, Uberwachung Beleuchtung, Zundung Test- und Messsysteme
Features * * * * * * * Low cost, small size plastic package Integrated FET and capacitors for pulse control Strained InAlGaAs/GaAs QW-structures High power large-optical-cavity laser structure Laser aperture 200 m x 2 m High-speed operation (< 30 ns pulse width) Low supply voltage (< 9 V)
Applications * * * * Range finding Security, surveillance Illumination, ignition Testing and measurement
Safety advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 "Safety of laser products".
Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Norm 60825-1 behandelt werden. Typ Type SPL LL85
Opt. Spitzenausgangsleistung Opt. Peak Power 14 W
Wellenlange Wavelength 850 nm
Bestellnummer Ordering Code Q62702P3558
2006-04-12
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LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Grenzwerte (kurzzeitiger Betrieb) (TA = 25 C) Maximum Ratings (short time operation) Parameter Parameter Spitzenausgangsleistung Peak output power Ladespannung (VG = 15 V) Charge voltage (VG = 15 V) www..com Gate-Spannung Gate voltage Tastverhaltnis Duty cycle Betriebstemperatur Operating temperature Lagertemperatur Storage temperature Lottemperatur (tmax = 10 s) Soldering temperature (tmax = 10 s) Symbol Symbol min. Werte Values max. 18 9 - 20 - - 40 - 40 - + 20 0.1 + 85 + 100 + 260 W V V % C C C - Einheit Unit
Popt VC VG d.c. Top Tstg Ts
2006-04-12
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LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Optische Kennwerte (TA = 25 C) Optical Characteristics Parameter Parameter Zentrale Emissionswellenlange1) Emission wavelength1) Spektralbreite (Halbwertsbreite)1) Spectral width (FWHM)1)
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Symbol Symbol min. 840 - 12 1.2 25 7.0 26 - 12
Werte Values typ. 850 4 14 1.5 28 9.5 29 200 x 2 15 max. 860 9 18 2.0 31 12.0 32 - 18
Einheit Unit nm nm W V ns ns ns m2 Grad deg. Grad deg.
Spitzenausgangsleistung1) Peak output power1) Ladespannung an der Laserschwelle Charge Voltage at laser threshold Pulsbreite (Halbwertsbreite)1), 2) Pulse width (FWHM)1), 2) Anstiegs- und Abfallzeit (10% ... 90%)1), 2) Rise and fall time (10% ... 90%)1), 2) Austrittsoffnung Aperture size
Popt UC, th tp tr , tf wxh
Strahldivergenz (Halbwertsbreite) parallel zum || 1) pn-Ubergang Beam divergence (FWHM) parallel to pn junction1) Strahldivergenz (Halbwertsbreite) senkrecht zum pn-Ubergang1) Beam divergence (FWHM) perpendicular to pn-junction1) Temperaturkoeffizient der Wellenlange Temperature coefficient of wavelength Thermischer Widerstand Thermal resistance Einschaltpunkt der Gate-Spannung Switch on gate voltage
1)
27
30
33
/ T
- - -
0.25 200 4.5
0.32 - -
nm/K K/W V
Rth VG on
2)
Werte beziehen sich auf folgende Standardbetriebsbedingung: >40ns Trigger-Pulsbreite, 1kHz Pulswiederholrate, 6.7V Ladespannung, 15V Gate-Spannung und 25C Umgebungstemperatur. Der Laser wird angesteuert mit dem MOSFET-Treiber Elantec EL7104C. Values refer to the following standard operating conditions: >40ns trigger pulse width, 1kHz pulse repetition rate, 6.7V charge voltage, 15V gate voltage and 25 C ambient temperature. The laser is driven by the MOSFET driver Elantec EL7104C. Die Schaltgeschwindigkeit ist abhangig von Strom und Geschwindigkeit, mit der die Gate-Kapazitat (typ. 300pF) des internen Transistors geladen wird. Kurzere Pulsbreiten, Anstiegs- und Abfallzeiten erhalt man bei Trigger-Pulsbreiten <40ns. Dies bewirkt jedoch auch eine reduzierte optische Spitzenleistung (siehe Diagramme auf Seite 5). Switching speed at gate depends on current and speed, charging the gate capacitance (typ. 300pF) of the internal transistor. Reduced pulse widths, rise and fall times occur at trigger pulse widths <40ns. This also reduces the optical peak power (see diagrams on page 5).
2006-04-12
3
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Optical output power Popt vs charge voltage Vc (tp = 30 ns, PRF = 1 kHz, VG = 15 V )
20 W
OHW00917
Optical spectrum, relative intensity Irel vs. wavelength (Popt = 14 W, tp = 30 ns)
rel
1.00 %
OHW00919
Popt
15
0.75
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0.50
5
0.25
0
0
1
2
3
4
5
6
7
V9
0 830 835 840 845 850 855
nm 865
VC
Far-field distribution parallel to junction Irel vs. angle ||
1.00
OHW00795
Far-field distribution perpendicular to junction Irel vs. angle
1.00
OHW00794
rel
0.75
rel
0.75
0.50
0.50
0.25
0.25
0 -30
-20
-10
0
10
Deg 30
0 -50
-30
-10
10
30 Deg 50
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LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Optical pulse form for variing trigger pulse widths (MOSFET driver Elantec EL7104C)
20 W
OHL01651
Optical pulse width vs. trigger pulse width (MOSFET driver Elantec EL7104C)
35 ns 30
OHL01652
15
25
20 ns 15 ns 10 ns 6 ns 5 ns 4.5 ns 4 ns 80 ns 40 ns 30 ns 25 ns 50 ns 100
Optical Pulse Width
Optical Power
20 15 10 5 0
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10
5
0
0
0
10 20 30 40 50 60 Trigger Pulse Width
ns 80
t
Optical peak power, fall and rise time vs. pulse width (MOSFET driver Elantec EL7104C)
40 W, ns 35
OHL01653
Optical peak power vs. optical pulse energy (MOSFET driver Elantec EL7104C)
20 W
OHL01654
30
Fall Time
15
Optical Peak Power
Peak Power, Rise/Fall Time
25 20
Peak Power
10
15 10
Rise Time
5
5
0
0
5
10
15
20
25
ns 35
0
0
0.1
0.2
0.3
0.4
J 0.6
Pulse Width FWHM
Pulse Energy
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LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85
Mazeichnung Package Outlines
4.9 (0.193) 0.1 (0.004)
1.4 (0.055) 0.15 (0.006)
2.3 (0.091) 0.1 (0.004)
0.3 (0.012) -0.25 (0.010)
+0.5 (0.020)
1.35 (0.053) 0.2 (0.008)
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Laser Diode
(12.2 (0.480))
5 (0.197) 0.1 (0.004)
1
2
3
Surface not flat
0 (0.000) 0.1 (0.004)
2.4 (0.094) 0.1 (0.004)
0 (0.000) 0.1 (0.004)
0 (0.000) 0.1 (0.004)
25.2 (0.992) 24.2 (0.953)
0 (0.000) 0.1 (0.004)
8.6 (0.339) 0.4 (0.016)
2
VC
(2.35 (0.093))
1.8 (0.071) 1.2 (0.047)
FET
D S
1
Trigger G VG Laser diode
C
C
0.5 (0.020) 0.1 (0.004)
spacing 2.54 (0.100)
0.6 (0.024) 0.4 (0.016)
3 GND
GWOY6123
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
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LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com
SPL LL85 Published by OSRAM Opto Semiconductors GmbH (c) All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
w
Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs w w . D a t a S h e e t 4 U . c o m incurred. systems with the express written approval of OSRAM OS. A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
1
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or 2
2006-04-12
www.lasercomponents.com
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Issue: 04/07 / V1 / HW / osram/ spl-ll85.pdf
LASER COMPONENTS IG, Inc., 9 River Road, Hudson, NH 03051 - USA, Phone: +1 603 821 7040, Fax: +1 603 821 7041, info@laser-components.com

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