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 Inchange Semiconductor
Product Specification
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Silicon NPN Power Transistors
2SD536
DESCRIPTION *With TO-3 package *High voltage,high speed *Low collector saturation voltage APPLICATIONS *Switching regulators *DC-DC converters *General purpose power amplifiers
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE 200 200 5 10 5 100 150 -55~150
UNIT V V V A A W
PC Tj Tstg
Inchange Semiconductor
Product Specification
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Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ;IB=0 IC=0.1mA ;IE=0 IE=0.1mA ;IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=200V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=5V 50 MIN 200 200 5 TYP.
2SD536
MAX
UNIT V V V
1.0 1.5 0.1 0.1
V V mA mA
2
Inchange Semiconductor
Product Specification
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Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD536
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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