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| R.A.P.992605-BEHRE 2425-25 25 WATT, 24V, Class C Microwave 2410-2470 MHz GENERAL DESCRIPTION The 2425-25 is a common base bipolar transistor capable of providing 25 Watts of Class C RF output power over the band of 2410-2470 MHz. This transistor is specifically designed for microwave broadband Class C amplifier applications. It includes input and output matching and uses gold metallization and diffused ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55AP Common Base Narrow Lead ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25C (Pd) Thermal Resistance (JC) Voltage and Current Collector-Emitter Voltage Emitter-Base Voltage Collector Current Temperatures Storage Temperature Operating Junction Temperature 75 W 2.5C/W 48V 3.5V 3A -65 to +200C +200C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL BVebo BVces hFE CHARACTERISTICS Emitter-Base Breakdown(open) Collector-Emitter Breakdown(shorted) DC Current Gain Ie=25mA Ic=160mA Ic=160mA, Vce=5V TEST CONDITIONS MIN 3.5 48 10 TYP MAX UNITS V V 100 FUNCTIONAL CHARACTERISTICS @ 25C GPB c VSWR Zin(1) Zout(2) (1) (2) Common Base Power Gain Collector Efficiency Output Load Mismatch Series Source Impedance Series Load Impedance Vcc = 24V, F = 2410-2470 MHz, Pout=25W Vcc = 24V, F = 2410-2470 MHz, Pout=25W Vcc = 24V, F = 2410-2470 MHz, Pout=25W Vcc=24V,F=2410,2440,2470 MHz,Pout=25W Vcc=24V,F=2410,2440,2470 MHz,Pout=25W 8.6j19.7 6.1j5.7 8.4j19.1 6.1j5.5 7.5 47 8 49 3:1 8.2j18.5 6.1j5.2 dB % Circuit source impedance (@ the device input) at which the device operates. Optimum load impedance into which the device output operates. Initial Issue April 1999 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 |
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