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| Transistors 2SB0745, 2SB0745A (2SB745, 2SB745A) Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Features * Low noise voltage NV * High forward current transfer ratio hFE * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 6.90.1 (0.4) Unit: mm 2.50.1 (1.0) (1.5) 3.50.1 (1.0) 2.00.2 2.40.2 (1.5) R 0.9 R 0.7 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) 2SB0745 2SB0745A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating -35 -55 -35 -55 -5 -50 -200 400 150 -55 to +150 V mA mA mW C C V Unit V 1.00.1 (0.85) 1.250.05 0.450.05 0.550.1 Collector-emitter voltage 2SB0745 (Base open) 2SB0745A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 3 (2.5) 2 (2.5) 1 1: Base 2: Collector 3: Emitter M-A1 Package Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0745 2SB0745A 2SB0745 2SB0745A VEBO VBE ICBO ICEO hFE VCE(sat) fT NV IE = -10 A, IC = 0 VCE = -1 V, IC = -100 mA VCB = -10 V, IE = 0 VCE = -10 V, IB = 0 VCE = -5 V, IC = -2 mA IC = -100 mA, IB = -10 mA VCB = -5 V, IE = 2 mA, f = 200 MHz VCE = -10 V, IC = -1 mA, GV = 80 dB Rg = 100 k, Function = FLAT 150 150 180 VCEO IC = -2 mA, IB = 0 Symbol VCBO Conditions IC = -10 A, IE = 0 Min -35 -55 -35 -55 -5 - 0.7 -1.0 - 0.1 -1 700 - 0.6 V V A A V MHz mV V Typ Max Unit V Emitter-base voltage (Collector open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Noise voltage Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 180 to 360 R 260 to 520 S 360 to 700 Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2003 SJC00050BED 4.10.2 4.50.1 1 2SB0745, 2SB0745A PC Ta 500 IC VCE -160 -140 Ta = 25C IB = -350 A IC I B -160 VCE = -5 V Ta = 25C Collector power dissipation PC (mW) Collector current IC (mA) -120 -100 -80 -60 -40 -20 -300 A -250 A -200 A -150 A -100 A -50 A 300 Collector current IC (mA) 400 -120 -80 200 -40 100 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base current IB (mA) IB VBE -800 VCE = -5 V Ta = 25C -120 IC VBE VCE = -5 V 25C Ta = 75C -25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 -100 Base current IB (A) -600 Collector current IC (mA) -10 -80 -400 -60 -1 Ta = 75C 25C -25C -40 -200 - 0.1 -20 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 - 0.01 - 0.1 -1 -10 -100 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) Collector current IC (mA) hFE IC 600 VCE = -5 V fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 500 VCB = -5 V Ta = 25C Cob VCB 20 IE = 0 f = 1 MHz Ta = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) 500 Ta = 75C 400 25C -25C 400 16 300 12 300 200 8 200 100 100 4 0 - 0.1 -1 -10 -100 0 0.1 1 10 100 0 - 0.1 -1 -10 -100 Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V) 2 SJC00050BED 2SB0745, 2SB0745A NV VCE 160 IC = -1 mA GV = 80 dB Function = FLAT 280 240 IC = -1 mA GV = 80 dB Function = RIAA Rg = 100 k 200 160 120 80 40 22 k 4.7 k NV VCE 160 NV IC VCE = -10 V GV = 80 dB Function = FLAT Noise voltage NV (mV) Rg = 100 k Noise voltage NV (mV) Noise voltage NV (mV) 120 120 80 22 k 40 80 Rg = 100 k 22 k 40 4.7 k 4.7 k 0 -1 -10 -100 0 -1 -10 -100 0 - 0.01 - 0.1 -1 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Collector current IC (mA) NV IC 280 240 VCE = -10 V GV = 80 dB Function = RIAA NV Rg 160 VCE = -10 V GV = 80 dB Function = FLAT NV Rg 280 240 VCE = -10 V GV = 80 dB Function = RIAA Noise voltage NV (mV) Noise voltage NV (mV) Noise voltage NV (mV) 120 200 160 120 80 40 0 - 0.01 Rg = 100 k 200 160 120 80 IC = -2 mA 40 0 80 IC = -1 mA 40 - 0.5 mA - 0.1 mA 22 k 4.7 k - 0.5 mA - 0.1 mA 1 10 100 - 0.1 -1 0 1 10 100 Collector current IC (mA) Signal source resistance Rg (k) Signal source resistance Rg (k) SJC00050BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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