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| Advance Technical Information PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P VDSS ID25 RDS(on) = 1200V = 6A 2.4 TO-263 AA (IXFA) G S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 1200 1200 30 40 6 18 3 300 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W C C C C C Nm/lb.in. g g g TO-220AB (IXFP) G DS D (Tab) TO-247 (IXFH) G D S D (Tab) D = Drain Tab = Drain G = Gate S = Source 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 &TO-247) TO-263 TO-220 TO-247 300 260 1.13 / 10 2.5 3.0 6.0 Features International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250A VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 1200 2.5 5.0 V V Easy to Mount Space Savings Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100202A(11/09) 100 nA 10 A 1 mA 2.4 VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2009 IXYS CORPORATION, All Rights Reserved IXFA6N120P IXFP6N120P IXFH6N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS RthCS TO-220 TO-247 0.50 0.21 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 3 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Gate Input Resistance Characteristic Values Min. Typ. Max 3.0 5.0 1.8 2830 150 30 24 11 60 14 92 15 50 S pF pF pF ns ns ns ns nC nC nC 0.50 C/W C/W C/W Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain TO-220 (IXFP) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr IRM QRM Note VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 3A, VGS = 0V -di/dt = 100A/s VR = 100V 1: Pulse test, t 300s; duty cycle, d 2%. TO-263 (IXFA) Outline Dim. A b b2 c c2 D D1 E 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 6.22 2.54 14.61 2.29 1.02 1.27 0 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78 0.13 Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .005 Characteristic Values Min. Typ. Max 6 24 1.4 300 7.8 1.1 A A V ns A C TO-247 (IXFH) AD Outline 1 = Gate 2 = Collector 3 = Emitter ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA6N120P IXFP6N120P IXFH6N120P Fig. 1. Output Characteristics @ T J = 25C 6 VGS = 10V 7V 5 10 7V 4 12 VGS = 10V Fig. 2. Extended Output Characteristics @ T J = 25C ID - Amperes 6V 8 3 ID - Amperes 6 6V 4 2 1 5V 4V 2 5V 0 0 2 4 6 8 10 12 14 16 0 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C 6 VGS = 10V 5 2.6 3.0 Fig. 4. RDS(on) Normalized to ID = 3A Value vs. Junction Temperature VGS = 10V R DS(on) - Normalized 6V 2.2 ID - Amperes 4 I D = 6A 1.8 1.4 I D = 3A 3 2 5V 1.0 1 4V 0 0 4 8 12 16 20 24 28 32 0.2 -50 -25 0 25 50 75 100 125 150 0.6 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 3A Value vs. Drain Current 2.6 2.4 2.2 VGS = 10V TJ = 125C 7 Fig. 6. Maximum Drain Current vs. Case Temperature 6 R DS(on) - Normalized 5 2.0 ID - Amperes TJ = 25C 0 1 2 3 4 5 6 7 8 9 10 11 1.8 1.6 1.4 4 3 2 1.2 1.0 0.8 1 0 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade (c) 2009 IXYS CORPORATION, All Rights Reserved IXFA6N120P IXFP6N120P IXFH6N120P Fig. 7. Input Admittance 10 9 8 7 11 10 9 8 TJ = - 40C Fig. 8. Transconductance g f s - Siemens ID - Amperes 6 5 4 3 2 1 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 TJ = 125C 25C - 40C 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 25C 125C 7 8 9 10 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 18 16 14 12 10 8 6 TJ = 125C 4 2 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 25C 10 9 8 7 VDS = 600V I D = 3A I G = 10mA Fig. 10. Gate Charge IS - Amperes VGS - Volts 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 10,000 1.000 Fig. 12. Maximum Transient Thermal Impedance f = 1 MHz Capacitance - PicoFarads Ciss Coss 100 Z(th)JC - C / W 30 35 40 1,000 0.100 0.010 Crss 10 0 5 10 15 20 25 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_6N120P(6C)10-02-09 |
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