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| InGaAs PIN photodiodes G11193 series Small package, surface mount type Features Small SMD (surface mount device) package Low noise, low dark current Low price Applications Optical power meter Measurement/analytical instruments General ratings Parameter Package Active area Window G11193-02R SMD 0.2 Resin 0.3 G11193-03R Unit mm - Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature * No condensation Symbol VR Max. Topr Tstg G11193-02R 10 -25 to +85* -40 to +100* G11193-03R Unit V C C Electrical and optical characteristics (Ta=25 C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Cut-off frequency Terminal capacitance Shunt resistance Detectivity Symbol p S ID fc Ct Rsh D* =1.3 m =1.55 m VR=5 V VR=5 V, RL=50 VR=5 V, f=1 MHz VR=10 mV =p Condition Higher than 10% of peak Min. 0.75 0.77 G11193-02R Typ. Max. 0.9 to 1.7 1.55 0.85 1.0 40 1 3 1000 5 x 1012 800 Min. 0.75 0.77 G11193-03R Typ. Max. 0.9 to 1.7 1.55 0.85 1.0 100 0.5 5 700 5 x 1012 1200 Unit m m A/W pA GHz pF M cmHz1/2/W www.hamamatsu.com 1 InGaAs PIN photodiodes G11193 series Spectral response 1.2 (Typ. Ta=25 C) Photo sensitivity temperature characteristic (Typ. Ta=25 C) 2 Temperature coefficient (%/C) 1.0 1.5 Photo sensitivity (A/W) 0.8 1 0.6 0.5 0.4 0 0.2 0 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -0.5 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (m) KIRDB0445EA Wavelength (m) KIRDB0409EA Dark current vs. reverse voltage 10 nA (Typ. Ta=25 C) Terminal capacitance vs. reverse voltage (Typ. Ta=25 C, f=1 MHz) 1 nA 1 nA Terminal capacitance 100 pF G11193-03R Dark current G11193-03R 100 pA 10 pF 10 pA G11193-02R 1 pA G11193-02R 1 pF 100 fA 0.01 0.1 1 10 100 100 fF 0.01 0.1 1 10 100 Reverse voltage (V) KIRDB0446EA Reverse voltage (V) KIRDB0447EA 2 InGaAs PIN photodiodes G11193 series Dark current vs. ambient temperature 100 nA (Typ. VR=5 V) 10 nA Dark current 1 nA G11193-03R 100 pA G11193-02R 10 pA 1 pA -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 Ambient temperature (C) KIRDB0448EA 3 InGaAs PIN photodiodes G11193 series Dimensional outline (unit: mm) Active area 5.0 0.2 1.8 1.2 0.2 0.6 0.2 Photosensitive surface 4.0 0.2 1.0 0.1 1.8 (2 x)R 0.4 0.1 (2 x) (R 0.2) 0.6 1.5 1.0 Cathode 0.7 3.0 0.7 Anode Type No. Active area G11193-02R 0.2 G11193-03R 0.3 KIRDA0210EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. (c)2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1111E01 Sep. 2010 DN 4 |
Price & Availability of G11193
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