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UNISONIC TECHNOLOGIES CO., LTD 8N60
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* RDS(ON) = 1.2@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 8N60L-X-TA3-T 8N60G-x-TA3-T 8N60L-x-TF1-T 8N60G-x-TF1-T 8N60L-x-TF3-T 8N60G-x-TF3-T 8N60L-x-T2Q-T 8N60G-x-T2Q-T Note: Pin Assignment: G: Gate D: Drain S: Source 8N60L-X-TA3-T (1)Packing Type (2)Package Type (3)Drain-Source Voltage (4)Lead Plating Package TO-220 TO-220F1 TO-220F TO-262 (1) T: Tube (2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F (2) T2Q: TO-262 (3) A: 600V, B: 650V (4) G: Halogen Free, L: Lead Free Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube
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ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT 8N60-A 600 V Drain-Source Voltage VDSS 8N60-B 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 7.5 A Continuous ID 7.5 A Drain Current 30 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 230 mJ Avalanche Energy Repetitive (Note 2) EAR 14.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262 147 W Power Dissipation PD TO-220F/TO-220F1 48 W Junction Temperature TJ +150 C Operating Temperature TOPR -55 ~ +150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 4. ISD 7.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
THERMAL DATA
PARAMETER TO-220/TO-262 Junction to Ambient TO-220F/TO-220F1 TO-220/TO-262 Junction to Case TO-220F/TO-220F1 SYMBOL JA JC RATING 62.5 62.5 0.85 2.6 UNIT C/W C/W C/W C/W
ELECTRICAL CHARACTERISTICS (TC =25C, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 8N60-A 8N60-B SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 A VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 0.7 2.0 1.0 4.0 1.2 MIN TYP MAX UNIT 600 650 10 100 -100 V V A nA nA V/C V pF pF pF ns ns ns ns nC nC nC 2 of 8
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Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
BVDSS/TJ ID = 250 A, Referenced to 25C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 A VGS = 10 V, ID = 3.75 A
VDS = 25 V, VGS = 0 V, f = 1MHz
965 1255 105 135 12 16 16.5 45 60.5 130 81 170 64.5 140 28 36 4.5 12
VDD = 300V, ID = 7.5 A, RG = 25 (Note 1, 2)
VDS= 480V,ID= 7.5A, VGS= 10 V (Note 1, 2)
UNISONIC TECHNOLOGIES CO., LTD
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8N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, IS = 7.5 A, Reverse Recovery Time tRR dIF/dt = 100 A/s (Note 2) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width 300s, Duty cycle2% 2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT 1.4 7.5 30 365 3.4 V A A ns C
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TEST CIRCUITS AND WAVEFORMS
+ VDS + L
Power MOSFET
D.U.T.
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD
Power MOSFET
VDS VGS RG
VDS
90%
10V
D.U.T.
VGS
10%
tD(ON) tR tD(OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS QG
10V QGS
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
BVDSS IAS
ID(t) VDD
VDS(t)
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
100 On-State Characteristics
VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V
Power MOSFET
Transfer Characteristics
Drain Current, ID (A)
Drain Current, ID (A)
10
10
150C 25C
1
5.0V
1
0.1
Notes: 1. 250s Pulse Test 2. TC=25C 0.1 1 10 Drain-to-Source Voltage, VDS (V)
0.1 2
Notes: 1. VDS=40V 2. 250s Pulse Test 4 6 8 10 Gate-Source Voltage, VGS (V) Body Diode Forward Voltage vs. Source Current
On-Resistance Variation vs. Drain Current and Gate Voltage Drain-Source On-Resistance, RDS(ON) (ohm) 6 5 VGS=10V 4 3 2 1 0 VGS=20V
TJ=25C
10 Reverse Drain Current, IDR (A) 150C 25C 1
0
5 10 15 Drain Current, ID (A) Capacitance Characteristics (Non-Repetitive)
20
0.1 0.2 0.4 0.6 0.8 1.0 1.2
Notes: 1. VGS=0V 2. 250s Test 1.4 1.6 1.8
Source-Drain Voltage, VSD (V) Gate Charge Characteristics ID=8A VDS=300V VDS=480V VDS=120V
1900 1700 Capacitance (pF) 1500 1300 1100 900 700 500 Crss
Ciss
Gate-Source Voltage, VGS (V)
Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd
12 10 8 6 4 2 0
Coss
300 Notes: 100 1. VGS=0V 2. f = 1MHz 0 0.1 1 10 Drain-SourceVoltage, VDS (V)
0
5
10
15
20
25
30
Total Gate Charge, QG (nC) 6 of 8
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UNISONIC TECHNOLOGIES CO., LTD
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8N60
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs. Temperature Drain-Source On-Resistance, RDS(ON) (Normalized) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
Power MOSFET
On-Resistance Junction Temperature
Drain-Source Breakdown Voltage, BVDSS (Normalized)
1.2
1.1
1.0
0.9 0.8 -100 -50 0 50
Note: 1. VGS=0V 2. ID=250A 100 150 200 Junction Temperature, TJ (C)
Note: 1. VGS=10V 2. ID=4A -50 0 50 100 150 200 Junction Temperature, TJ (C) Maximum Drain Current vs. Case Temperature
100
Maximum Safe Operating Area
Operation in This Area is Limited by RDS(on)
10 8 Drain Current, ID (A) 6 4 2 0
100s
Drain Current, ID (A)
10
100s 1ms
10ms
DC
1 Notes: 1. TJ=25C 2. TJ=150C 0.1 3. Single Pulse 1 10 100 1000 Drain-Source Voltage, VDS (V)
25
50
75
100
125
150
Case Temperature, TC (C)
Transient Thermal Response Curve 1 Thermal Response, JC (t)
D=0.5 D=0.2 D=0.1
0.1
D=0.05 0.02 0.01 Single pulse 1. JC (t) = 0.85C/W Max.
Notes:
0.01 10-5 10-4 10-3
2. Duty Factor, D=t1/t2 3. TJM-TC=PDMxJC (t)
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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