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| UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO-251 1 TO-220 Power MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. 1 TO-220F 1 TO-220F1 FEATURES * RDS(ON) = 1.5 @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness 1 TO-252 Lead-free: 6N60L Halogen-free:6N60G SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60L-X-TA3-T 6N60G-x-TA3-T 6N60L-x-TF1-T 6N60G-x-TF1-T 6N60L-x-TF3-T 6N60G-x-TF3-T 6N60L-x-TM3-T 6N60G-x-TM3-T 6N60L-x-TN3-R 6N60G-x-TN3-R Package TO-220 TO-220F1 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright (c) 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-117.D 6N60 ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current (Note 2) 6N60-A 6N60-B SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt Power MOSFET RATINGS 600 650 30 UNIT V V V 6.2 A 6.2 A 24.8 A Single Pulsed (Note 3) 440 mJ Avalanche Energy 13 mJ Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) 4.5 ns TO-220 125 W Power Dissipation PD TO-220F/TO-220F1 40 W TO-251/TO-252 55 W Junction Temperature TJ +150 C Operating Temperature TOPR -55 ~ +150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 , Starting TJ = 25C 4. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C THERMAL DATA PARAMETER Junction to Ambient TO-220 TO-220F/TO-220F1 TO-251/TO-252 TO-220 TO-220F/TO-220F1 TO-251/TO-252 SYMBOL JA RATING 62.5 62.5 110 1.0 3.2 2.27 UNIT C/W C/W C/W C/W C/W C/W Junction to Case JC ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse 6N60-A 6N60-B SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250A MIN TYP MAX UNIT 600 650 10 100 -100 0.53 2.0 4.0 1.5 770 1000 95 120 10 13 V V A nA nA V/C V pF pF pF Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V IGSS VGS = -30V, VDS = 0V I = 250 A, BVDSS/TJ D Referenced to 25C VGS(TH) RDS(ON) CISS COSS CRSS VDS = VGS, ID = 250A VGS = 10V, ID = 3.1A VDS=25V, VGS=0V, f=1.0 MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-117.D 6N60 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=300V, ID =6.2A, RG =25 (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, ID=6.2A, VGS=10 V Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current VGS = 0 V, IS = 6.2 A, Reverse Recovery Time tRR dIF/dt = 100 A/s (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width 300s, Duty cycle 2% 2. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 20 70 40 45 20 4.9 9.4 50 150 90 100 25 ns ns ns ns nC nC nC V A A ns C 1.4 6.2 24.8 290 2.35 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-117.D 6N60 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-117.D 6N60 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-117.D 6N60 TYPICAL CHARACTERISTICS Power MOSFET Drain Current,ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current,ID (A) Drain Current, ID (A) Drain Current,ID (A) 6 of 6 QW-R502-117.D |
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