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| DC COMPONENTS CO., LTD. R MID31C DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. TO-251 Pinning 1 = Base 2 = Collector 3 = Emitter .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .284(7.20) .268(6.80) Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 100 100 5 3 15 +150 -55 to +150 Unit V V V A W o o .032 Max (0.80) .035 Max (0.90) 1 2 3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45) C .181 Typ (4.60) .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO ICES ICEO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT 380s, Duty Cycle 2% (1) Min 100 100 25 10 3 Typ - Max 20 50 1 1.2 1.8 50 - Unit V V A A mA V V MHz Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 VCE=100V, VEB=0 VCE=60V, IB=0 VEB=5V, IC=0 IC=3A, IB=375mA IC=3A, VCE=4V IC=1A, VCE=4V IC=3A, VCE=4V IC=0.5A, VCE=10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) Transition Frequency (1)Pulse Test: Pulse Width |
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