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VISHAY
IL66/ ILD66/ ILQ66
Vishay Semiconductors
Optocoupler, Photodarlington Output, With Internal Rbe (Single, Dual, Quad Channel)
Single Channel
Features
* * * * * * Internal RBE for High Stability Four Available CTR Categories per Package Type BVCEO > 60 V Standard DIP Packages Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
A1 C2 NC 3
6B 5C 4E
Dual Channel
A1 C2 C3
8E 7
C
6C 5
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1
A4
E
Quad Channel
A1 C2 C3
16 E 15 C 14 C 13 E 12 E 11 C 10 C 9
Description
IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels.
A4 A C C
5 6 7
A8
i179014
E
e3
Part Remarks CTR 300 %, SMD-8 (option 7) CTR 400 %, SMD-8 (option 9) CTR 500 %, SMD-8 (option 9) CTR 500 %, SMD-16 (option 7) CTR 500 %, SMD-16 (option 9) ILD66-2X007 ILD66-3X009 ILD66-4X009 ILQ66-4X007 ILQ66-4X009
Pb
Pb-free
Order Information
Part IL66-1 IL66-2 IL66-3 IL66-4 ILD66-1 ILD66-2 ILD66-3 ILD66-4 ILQ66-1 ILQ66-2 ILQ66-3 ILQ66-4 IL66-4X009 Remarks CTR 100 %, DIP-6 CTR 300 %, DIP-6 CTR 400 %, DIP-6 CTR 500 %, DIP-6 CTR 100 %, DIP-8 CTR 300 %, DIP-8 CTR 400 %, DIP-8 CTR 500 %, DIP-8 CTR 100 %, DIP-16 CTR 300 %, DIP-16 CTR 400 %, DIP-16 CTR 500 %, DIP-16 CTR 500 %, SMD-8 (option 9)
For additional information on the available options refer to Option Information.
Document Number 83638 Rev. 1.5, 26-Oct-04
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IL66/ ILD66/ ILQ66
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Each Channel Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 25 C Test condition Symbol VRM IF Pdiss Value 6.0 60 100 1.33 Unit V mA mW mW/C
Output
Parameter Power dissipation Derate linearly from 25C Test condition Symbol Pdiss Value 150 2.0 Unit mW mW/C
Coupler
Parameter Isolation test voltage Total package power dissipation Test condition t = 1.0 sec. IL66 ILD66 ILQ66 Derate linearly from 25 C IL66 ILD66 ILQ66 Creepage Clearance Comparative tracking index Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Lead soldering time at 260 C RIO RIO Tstg Tamb Part Symbol VISO Ptot Ptot Ptot Value 5300 250 400 500 3.3 5.33 6.67 7.0 7.0 175 1012 10
11
Unit VRMS mW mW mW mW/C mW/C mW/C min min C C sec.
- 55 to + 125 - 55 to + 100 10
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Document Number 83638 Rev. 1.5, 26-Oct-04
VISHAY
Electrical Characteristics
IL66/ ILD66/ ILQ66
Vishay Semiconductors
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
GaAs Emitter Parameter Forward voltage Reverse current Capacitance Test condition IF = 20 mA VR = 6.0 V VR = 0 V Symbol VF IR CO Min Typ. 1.25 0.1 25 Max 1.5 10 Unit V A pF
Output
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage (IL66) Collector-emitter leakage current Capacitance, collector-emitter Test condition IC = 1.0 mA, IF = 0 IC = 10 A VCE = 50 V, IF = 0 VCE = 10 V Symbol BVCEO BVCBO ICEO Min 60 60 1.0 3.4 100 Typ. Max Unit V V nA pF
Coupler
Parameter Saturation voltage, collectoremitter Test condition IC = 10 mA, IF = 10 mA Symbol VCEsat Min Typ. 0.9 Max 1.0 Unit V
Current Transfer Ratio
Parameter Current Transfer Ratio Test condition IF = 2.0 mA, VCE = 10 V IF = 0.7 mA, VCE = 10 V IF = 2.0 mA, VCE = 5.0 V Part IL(D,Q)66-1 IL(D,Q)66-2 IL(D,Q)66-3 IL(D,Q)66-4 Symbol CTR CTR CTR CTR Min 100 300 400 500 Typ. 400 500 500 750 Max Unit % % % %
Document Number 83638 Rev. 1.5, 26-Oct-04
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IL66/ ILD66/ ILQ66
Vishay Semiconductors Switching Characteristics
Parameter Rise time -1, -2, -4 Fall time -1, -2, -4 Rise time -3 Fall time -3 Test condition VCC = 10 V IF = 2.0 mA, RL = 100 IF = 0.7 mA VCC = 10 V, RL = 100 Symbol tr tf tr tf Min Typ. Max 200 200 200 200
VISHAY
Unit s s s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.4
V F - Forward Voltage - V
1.2
NCTRce - Normalized CTRce
1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1
TA = -55C TA = 25C
1.0 0.8 0.6 0.4 0.2 0.0 .1
Normalized to: VCE = 5 V IF = 10 mA
VCE = 1 V
TA = 100C
VCE = 5 V 1 10 100 1000
1 10 I F - Forward Current - mA
100
iil66_03
IF - LED Current - mA
iil66_01
Figure 1. Forward Voltage vs. Forward Current
Figure 3. Normalized Non-saturated and Saturated CTRCE vs. LED Current
2.0
NCTRce - Normalized CTRce
10000
ICE - Collector-emitter current - mA
1.5
Normalized to: VCE = 5 V IF = 2 mA
VCE = 1 V
1000 100 10 1 .1 .01 VCE = 5 V
VCE = 5 V
1.0
0.5
VCE = 1 V
0.0 .1 1 10 100 .001 .1
iil66_04
1
I F - LED Current - mA
iil66_02
10
100
I F - LED Current - mA
Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current
Figure 4. Non-Saturated and Saturated Collector Emitter Current vs. LED Current
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Document Number 83638 Rev. 1.5, 26-Oct-04
VISHAY
IL66/ ILD66/ ILQ66
Vishay Semiconductors
1000
tpHL - High/Low Propagation Delay - s
50 40 30 20 10 0 220 10 K Vcc = 5 V Vth = 1.5 V
100
Icb - Photocurrent - a
10
1
.1 .1
iil66_05
1
10
100
iil66_08
0
5
IF - LED Current - mA
10 15 IF - LED Current - mA
20
Figure 5. Collector-Base Photocurrent vs. LED Current
Figure 8. High to low Propagation Delay vs. Collector Load Resistance and LED Current
10000
tpLH - Low/High Propagation Delay - s
150 V CE = 5 V V CE = 1 V 125 100 75 50 25 0 .1 0 10 100 1000
iil66_09
1000
ICE -Collector-emitter current mA
10 K
100 10 1 .1 .01 .001
2 K Vcc = 5 V Vth = 1.5 V 220 K
0
5
10
15
20
iil66_06
IB - Base current - s
IF - LED Current - mA
Figure 6. Collector-Emitter Current vs.LED Current
Figure 9. Low to High Propagation Delay vs. Collector Load Resistance and LED Current
25000 20000 VCE= 5 V 15000 10000 VO 5000 VCE= 1 V 0 .1 1 10 100 1000 tPHL tS I B - Base Current - A
iil66_07 iil66_10
HFE - Forward Gain
IF
tD tR tPLH VTH=1.5 V tF
Figure 7. Non-Saturated and Saturated HFE vs. LED Current
Figure 10. Switching Waveform
Document Number 83638 Rev. 1.5, 26-Oct-04
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IL66/ ILD66/ ILQ66
Vishay Semiconductors
Figure 11. Switching Schematic
VISHAY
VCC =10 V F=10 KHz, DF=50%
RL VO
IF
iil66_11
Package Dimensions in mm
14770
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Document Number 83638 Rev. 1.5, 26-Oct-04
VISHAY
Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 3 2 1
IL66/ ILD66/ ILQ66
Vishay Semiconductors
ISO Method A
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
Package Dimensions in Inches (mm)
pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16
ISO Method A
.779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56)
i178007
.300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35)
.020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27)
10 typ. 3-9 .008 (.20) .012 (.30)
Document Number 83638 Rev. 1.5, 26-Oct-04
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IL66/ ILD66/ ILQ66
Vishay Semiconductors
VISHAY
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.028 (0.7) MIN.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18494
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Document Number 83638 Rev. 1.5, 26-Oct-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
IL66/ ILD66/ ILQ66
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83638 Rev. 1.5, 26-Oct-04
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