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Preliminary Technical Information
GenX3TM 600V IGBT
Ultra Low Vsat PT IGBT for up to 5kHz switching
IXGA36N60A3 IXGP36N60A3 IXGH36N60A3
VCES = 600V IC110 = 36A VCE(sat) 1.4V
TO-263 (IXGA)
Symbol
VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped inductive load @ 600V TC = 25C
Maximum Ratings
600 600 20 30 36 200 ICM = 60 220 -55 ... +150 150 -55 ... +150 V V V V A A A W C C C C C Nm/lb.in. g g g
G G
G E (TAB)
TO-220 (IXGP)
(TAB) C E
TO-247 (IXGH)
C
(TAB) E
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-220) TO-263 TO-220 TO-247
300 260 1.13/10 2.5 3.0 6.0
G = Gate E = Emitter Features
C = Collector TAB = Collector
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Optimized for low conduction losses International standard packages Advantages High power density Low gate drive requirement Applications
Symbol Test Conditions
(TJ = 25C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 30A, VGE = 15V, Note 1 TJ = 125C
Characteristic Values
Min. 600 3.0 5.0 Typ. Max. V V
25 A 250 A 100 nA 1.4 V
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits
(c) 2008 IXYS CORPORATION, All rights reserved
DS100006(07/08)
IXGA36N60A3 IXGP36N60A3 IXGH36N60A3
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs
Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS (TO-247) (TO-220) 0.25 0.50 Inductive Load, TJ = 25C IC = 30A, VGE = 15V VCE = 400V, RG = 5 Inductive Load, TJ = 25C IC = 30A, VGE = 15V VCE = 400V, RG = 5 IC = 30A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VCE = 10V, Note 1
Characteristic Values Min. Typ. Max.
25 42 2380 115 30 80 12 36 18 23 0.74 330 325 3.00 18 25 1.50 500 500 5.30 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.56 C/W C/W C/W
TO-247 (IXGH) Outline
P
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-220 (IXGP) Outline
Note 1: Pulse test, t 300s; duty cycle, d 2%. TO-263 (IXGA) Outline
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Pins:
1 - Gate 3 - Source
2 - Drain 4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA36N60A3 IXGP36N60A3 IXGH36N60A3
Fig. 1. Output Characteristics @ 25C
60 55 50 45 VGE = 15V 13V 11V 9V 300 270 240 210
Fig. 2. Extended Output Characteristics @ 25C
VGE = 15V 13V 11V 9V
IC - Amperes
IC - Amperes
40 35 30 25 20 15 10 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 7V
180 150 120 90 60 7V
5V
30 0 0 2 4
5V 6 8 10 12 14 16
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
60 55 50 45 VGE = 15V 13V 11V 9V 1.4 1.3
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I
C
= 60A
VCE(sat) - Normalized
IC - Amperes
40 35 30 25 20 15 10 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 5V 7V
1.2 1.1 I 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150
C
= 30A
I
C
= 15A
VCE - Volts
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TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
4.0 3.5 3.0 TJ = 25C 200 180 160 140
Fig. 6. Input Admittance
IC - Amperes
VCE - Volts
2.5 2.0 1.5 1.0 0.5 5 6 7
I
C
= 60A 30A 15A
120 100 80 60 40 20 0 TJ = 125C 25C - 40C
8
9
10
11
12
13
14
15
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA36N60A3 IXGP36N60A3 IXGH36N60A3
Fig. 7. Transconductance
80 70 60 TJ = - 40C 16 VCE = 600V 14 12 I C = 30A I G = 10 mA
Fig. 17. Gate Charge
g f s - Siemens
25C 125C
40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 200
VGE - Volts
50
10 8 6 4 2 0 0 10 20 30 40 50 60 70 80
IC - Amperes
QG - NanoCoulombs
Fig. 19. Reverse-Bias Safe Operating Area
70 60 50 10,000
Fig. 18. Capacitance
f = 1 MHz
Capacitance - PicoFarads
IC - Amperes
1,000
Cies
40 30 20 10 0 100
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Coes 100
TJ = 125C RG = 5 dV / dt < 10V / ns
200
300
400
500
600
700
10 0 5 10 15 20 25 30 35 40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_36N60A3(55) 07-03-08-A
IXGA36N60A3 IXGP36N60A3 IXGH36N60A3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
12 11 10 Eoff VCE = 400V Eon 4.0 3.6 11 10 9 Eoff VCE = 400V Eon
Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature
2.0
---I
C
RG = 5 , VGE = 15V = 60A
1.8 1.6 1.4 1.2 I
C
---
I
C
= 60A
3.2
Eoff - MilliJoules
Eoff - MilliJoules
9 8 7 6 5 4 3 2 0
TJ = 125C , VGE = 15V
2.8 2.4 2.0 I C = 30A 1.6 1.2 0.8 I C = 15A 0.4
8 7 6 5 4 3 2 1 25 35 45 55 65 75 85 95 105 115 I
C
E
Eon - MilliJoules
on
- MilliJoules
= 30A
1.0 0.8 0.6 0.4
= 15A
0.2 0.0 125
10
20
30
40
50
60
70
80
90
0.0 100 110 120
RG - Ohms
TJ - Degrees Centigrade
Fig. 14. Inductive Switching Energy Loss vs. Collector Current
11 10 9 Eoff VCE = 400V Eon 2.0 950 900 850
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
1300
----
RG = 5 , VGE = 15V
1.8 1.6 1.4
tf
VCE = 400V
td(off) - - - -
TJ = 125C, VGE = 15V
1200 1100
t d(off) - Nanoseconds
Eoff - MilliJoules
8 7 6 5 4 3 2 1 15 20 25 30 35 40 45 50 55 60 TJ = 125C TJ = 25C
t f - Nanoseconds
800 750 700 650 600 550 500 450 0 10 20 30 40 50 60 70 80 90 I = 15A, 30A I C = 60A
1000 900 800 700 600 500 400 300 100 110 120
E - MilliJoules
on
1.2 1.0 0.8 0.6 0.4 0.2 0.0
C
IC - Amperes
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RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
850 800 750 700 600 800 750 700
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
640 570 540 510 480
tf
VCE = 400V
td(off) - - - -
tf
VCE = 400V
td(off) - - - -
600 560
RG = 5 , VGE = 15V
RG = 5 , VGE = 15V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
650 600 550 500 450 400 350 300 250 15 20 25 30 35 40 45 50 55 60 TJ = 25C TJ = 125C
t f - Nanoseconds
650 600 550 500 450 400 350 300 25 35 45 55 65 75 85 95 105 115
520 480
450 420 390 360 330 300 270 240
I
C
= 15A, 30A, 60A
440 400 360 320 280 240 125
IC - Amperes
TJ - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA36N60A3 IXGP36N60A3 IXGH36N60A3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
150 135 120 110 65 60 55 50 I C = 60A
Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature
27 26 25 24 23 22 21 I C = 30A 20 19 18 17 I 25 35 45 55 65 75 85
C
tr
VCE = 400V
td(on) - - - I C = 60A
100 90
TJ = 125C, VGE = 15V
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t r - Nanoseconds
105 90 75 60 45 30 15 0 0 10 20 30 40 50 60 70 80 90 I
C
80 70 60 I C = 30A 50 40 = 15A 30 20 10 100 110 120
45 40 35 30 25 20 15 10 5
tr
VCE = 400V
td(on) - - - -
RG = 5 , VGE = 15V
= 15A 105 115
16 15 125
95
RG - Ohms
TJ - Degrees Centigrade
Fig. 20. Inductive Turn-on Switching Times vs. Collector Current
60 55 50 25
tr
td(on) - - - -
RG = 5 , VGE = 15V VCE = 400V
24 23
t d(on) - Nanoseconds
t r - Nanoseconds
45 40 35 30 25 20 15 10 15 20 25 30 35 40 45 50 55 60 TJ = 125C TJ = 25C
22 21 20 19 18 17 16 15
IC - Amperes
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IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_36N60A3(55) 07-03-08-A

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