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| 8W Power Amplifier Die (8.0 - 10.5 GHz) ITT8504D Features * * * Broadband Performance 35% Typical Power Added Efficiency Self-Aligned MSAG(R) MESFET Process ADVANCED INFORMATION Description The ITT8504D is a three stage MMIC power amplifier fabricated using GaAsTEK's mature GaAs Self-Aligned MSAG(R) MESFET Process. This product is fully matched to 50 ohms on both the input and the output. Maximum Ratings (T A = 25 C unless otherwise noted) Rating DC Drain Supply Voltage DC Gate Supply Voltage Power Dissipation (TBASE = 70 C) RF Input Power Junction Temperature Storage Temperature Symbol VDD VGG PDISS PIN TJ TSTG Value 12 -4 500 150 -40 to +85 Unit Vdc Vdc W mW C C ELECTRICAL CHARACTERISTICS VDD=9.0 V, VGG=-1.8 V, TA=25 C Characteristic Frequency Output Power, Saturated Output Power, P1dB Power Gain (Linear) Gain Flatness Over Frequency Power Added Efficiency Input VSWR Harmonics Spurious Third-Order Intercept Point Symbol PSAT P1dB GP N TOI Min 8.0 Typ 39 37 22 +/- 1.0 35 TBD Max 10.5 Unit GHz dBm dBm dB dB % dBc dBc dBm -20 -60 TBD Advanced Information - Specifications Subject to Change Without Notice 902178 B, April 1999 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1 |
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