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| AP9585H/J Advanced Power Electronics Corp. Lower Gate Charge Simple Drive Requirement Fast www..com Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -80V 180m -11.2A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9585J) is available for low-profile applications. G D S GD S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -80 25 -11.2 -7.1 30 44.6 0.36 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units /W /W Data and specifications subject to change without notice 200302041 AP9585H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -80 -1 - Typ. -0.07 10 19 5 7 10 15 64 56 140 90 Max. Units 180 200 -3 -1 -25 100 30 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) www..com Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A VGS=-4.5V, ID=-6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-80V, VGS=0V VDS=-64V, VGS=0V VGS= 25V ID=-6A VDS=-64V VGS=-4.5V VDS=-40V ID=-6A RG=3.3,VGS=-10V RD=6.7 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1740 2780 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-6A, VGS=0V IS=-6A, VGS=0V, dI/dt=-100A/s Min. - Typ. 86 364 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9585H/J 40 30 35 T C = 25 C o -ID , Drain Current (A) 30 -ID , Drain Current (A) -10V -6.0V -5.0V -4.5V TC=150oC 25 -10V -6.0V -5.0V -4.5V 20 25 20 15 15 10 www..com 10 5 5 V G =-3.0V 0 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 V G =-3.0V 0 12 14 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 155 2.2 150 ID=-6A T C =25 Normalized R DS(ON) 2.0 I D = -10 A V G = - 10V 1.8 1.6 RDS(ON\) (m ) 145 1.4 1.2 140 1.0 135 0.8 0.6 130 0.4 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 6 5 2.0 4 3 T j =150 o C T j =25 o C -VGS(th) (V) -IS(A) 1.5 2 1.0 1 0 0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9585H/J f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) 10 I D =-6A V DS =-64V C iss 1000 8 6 C (pF) C oss 4 100 www..com C rss 2 0 0 10 20 30 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 100us 1ms 10ms 100ms DC 0.2 -ID (A) 0.1 0.1 0.05 PDM 0.02 1 t T T C =25 C Single Pulse o 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.1 0.1 1 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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