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| www..com SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) 0.010 ID (A) 75a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP75N08-10 DS S N-Channel MOSFET Top View SUB75N08-10 www..com ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VGS ID IDM IAR EAR PD TJ, Tstg Limit "20 75a 55 Unit V A 240 60 280 187c W 3.7 -55 to 175 _C mJ THERMAL RESISTANCE RATINGS Parameter PCB Mount Junction-to-Ambient Junction to Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70263 S-57253--Rev. B, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 (TO-263)d RthJA hJA RthJC Symbol Limit 40 62.5 0.8 Unit _C/W 2-1 www. .com www..com SUP/SUB75N08-10 Vishay Siliconix Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 75 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 75 V, VGS = 0 V, TJ = 125_C VDS = 75 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A DiS OS Ri Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0087 0.010 0.017 0.021 S W 75 2.0 3.5 4.5 "100 1 50 150 A mA A nA V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg VGS = 0 V, VDS = 25 V f = 1 MH V V, MHz 4800 910 270 85 VDS = 30 V, VGS = 10 V, ID = 75 A V 31 24 20 95 65 20 40 200 ns 120 60 120 nC C pF F www..com Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0 47 W V, 0.47 ID ^ 75 A, VGEN = 10 V RG = 2 5 W A V, 2.5 IS ISM VSD trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms A di/d A/ IF = 75 A , VGS = 0 V Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge 75 A 240 1.0 80 7 0.28 1.3 120 9 0.54 V ns A mC Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70263 S-57253--Rev. B, 24-Feb-98 www. .com www..com SUP/SUB75N08-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 V 8V 200 I D - Drain Current (A) 7V I D - Drain Current (A) 150 9V 200 Transfer Characteristics 150 100 100 6V 50 50 4V 0 0 2 4 6 8 10 5V TC = 125_C 25_C -55_C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = -55_C r DS(on) - On-Resistance ( ) 25_C g fs - Transconductance (S) 80 0.012 On-Resistance vs. Drain Current 100 0.010 VGS = 10 V 0.008 www..com 125_C 0.006 0.004 0.002 VGS = 20 V 60 40 20 0 0 20 40 60 80 100 0 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 7000 6000 C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 10 20 30 40 50 60 Crss Coss Ciss 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 75 A 12 8 4 0 0 25 50 75 100 125 150 175 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70263 S-57253--Rev. B, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 www. .com www..com SUP/SUB75N08-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.5 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 TJ - Junction Temperature (_C) 150 175 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area Limited by rDS(on) 100 500 80 I D - Drain Current (A) 60 I D - Drain Current (A) www..com 100 10 1 TC = 25_C Single Pulse 10 ms 100 ms 1 ms 40 10 ms 100 ms dc 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance 0.1 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 3 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70263 S-57253--Rev. B, 24-Feb-98 www. .com |
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